Electrical Transport — Fabrication of an Active Electronic Device Using a Hetero-bimetallic Coordination Polymer

5 measurement groups · 37 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Thermionic-emission analysis using Cheung's equations

ITO/[(NCS)Pb(H2O)LNi(NCS)]n/Al thin-film Schottky device · Thin Film

Ideality factor from dV/d ln I versus I; barrier height and series resistance from H(I) versus I under dark and light.

Temperature: room temperature
Atmosphere: ambient
Geometry: ITO/CP thin film/Al Schottky junction
Context: pristine CP active thin film
Measurement source: 5-6 · Electrical Characterization · Figures 6-7; Table 5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
ideality factor IF under dark	0.52	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
ideality factor IF under light	0.79	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
Schottky barrier height phiB under dark	0.71 eV	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
Schottky barrier height phiB under light	0.55 eV	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
series resistance from dV/dlnI under dark	0.94 kOhm	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
series resistance from dV/dlnI under light	0.8 kOhm	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
series resistance from H(I) under dark	1.07 kOhm	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
series resistance from H(I) under light	0.86 kOhm	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5

Two-ohmic-contact current-voltage measurement of crystal conductivity

Electrical conductivity

X-ray quality crystalline [(NCS)Pb(H2O)LNi(NCS)]n · Single Crystal

Current-voltage measurement at sequential applied bias within +/-10 V.

Geometry: crystal with two ohmic contacts
Context: pristine CP crystal
Measurement source: S4 · Conductivity of the crystal · Figure S3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
single-crystal conductivity	4.1 x 10^-4 S cm^-1	—	—	Text Exact Reported	S4 · Conductivity of the crystal · Figure S3
crystal I-V voltage range	+/-10 V	—	—	Text Exact Reported	S4 · Conductivity of the crystal · Figure S3

Two-probe current-voltage measurement with Keithley 2635B source meter

Electrical conductivity

ITO/[(NCS)Pb(H2O)LNi(NCS)]n/Al thin-film Schottky device · Thin Film

I-V recorded from -2 to +2 V under dark and AM 1.5G illumination at room temperature under ambient conditions.

Temperature: room temperature
Atmosphere: ambient
Geometry: ITO/CP thin film/Al metal-semiconductor Schottky junction; effective area 7.065 x 10^-2 cm^2; film thickness about 1 um
Context: pristine CP active thin film
Measurement source: 2,4-5 · Device Fabrication; Electrical Characterization · Figure 5; Table 5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
effective diode area	7.065 x 10^-2 cm^-2	—	—	Text Exact Reported	2,4 · Device Fabrication; Electrical Characterization · Figure 5
device film thickness	~1 um	—	—	Text Approximate	2,4 · Device Fabrication; Electrical Characterization · Figure 5
thin-film conductivity under dark	2.02 x 10^-4 S cm^-1	—	—	Text Exact Reported	4-6 · Electrical Characterization · Table 5
thin-film conductivity under AM 1.5G illuminationMarked as a best value within this paper	8.55 x 10^-4 S cm^-1	—	—	Text Exact Reported	4-6 · Electrical Characterization · Table 5
I-V upper voltage limit	+2 V	—	—	Text Exact Reported	2,4 · Device Fabrication; Electrical Characterization · Figure 5
I-V lower voltage limit	-2 V	—	—	Text Exact Reported	2,4 · Device Fabrication; Electrical Characterization · Figure 5
rectification ratio under dark	70	—	—	Text Exact Reported	4 · Electrical Characterization · Figure 5; Table 5
rectification ratio under AM 1.5G illuminationMarked as a best value within this paper	89	—	—	Text Exact Reported	4 · Electrical Characterization · Figure 5; Table 5
on/off ratio under dark	70	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
on/off ratio under lightMarked as a best value within this paper	89	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
conductivity sigma under dark	2.02 x 10^-4 S cm^-1	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
conductivity sigma under lightMarked as a best value within this paper	8.55 x 10^-4 S cm^-1	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5

Capacitance-frequency dielectric measurement at constant bias potential

Pelletised [(NCS)Pb(H2O)LNi(NCS)]n for dielectric measurement · Pellet

Pellet disc diameter 7.32 mm and thickness 1.8 mm; room-temperature capacitance versus frequency.

Temperature: room temperature
Geometry: pellet disc
Context: pristine CP pellet
Measurement source: S5-S6 · Dielectric Measurements · Figure S4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
saturation capacitance	4.33 x 10^-10 F	—	—	Text Exact Reported	S5 · Dielectric Measurements · Figure S4
relative dielectric constant	10.53	—	—	Text Exact Reported	S5 · Dielectric Measurements · Figure S4
dielectric pellet diameter	7.32 mm	—	—	Text Exact Reported	S5 · Dielectric Measurements · Figure S4
dielectric pellet thickness	1.8 mm	—	—	Text Exact Reported	S5 · Dielectric Measurements · Figure S4

Space-charge-limited-current analysis using Mott-Gurney and Einstein-Smoluchowski equations

Space-charge-limited current analysis

ITO/[(NCS)Pb(H2O)LNi(NCS)]n/Al thin-film Schottky device · Thin Film

Mobility, carrier concentration, lifetime, diffusion coefficient, and diffusion length estimated from I-V log plot and I versus V^2 plot.

Temperature: room temperature
Atmosphere: ambient
Geometry: CP thin film about 1 um thick
Context: pristine CP active thin film
Measurement source: 5-7 · Electrical Characterization · Figures 8-9; Table 5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
SCLC region assignment	Reg 1 ohmic; Reg 2 trap filling; Reg 3 trap-free SCLC with I proportional to V^2	—	—	Text Qualitative	5-6 · Electrical Characterization · Figure 8
diffusion coefficient D under dark	8.85 x 10^-8 m^2 s^-1	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
diffusion coefficient D under light	2.45 x 10^-8 m^2 s^-1	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
diffusion length LD under dark	248 nm	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
diffusion length LD under lightMarked as a best value within this paper	273 nm	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
effective carrier mobility mueff under dark	9.46 x 10^-3 cm^2 V^-1 s^-1	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
effective carrier mobility mueff under lightMarked as a best value within this paper	3.42 x 10^-2 cm^2 V^-1 s^-1	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
carrier concentration N under dark	1.33 x 10^23 m^-3	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
carrier concentration N under light	1.56 x 10^23 m^-3	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
carrier lifetime tau under dark	0.35 us	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5
carrier lifetime tau under light	0.11 us	—	—	Table Exact Reported	6 · Electrical Characterization · Table 5