Electrical Transport — Three-type precursors for low-temperature solution-processed void-and-crack-free copper(I) iodide films: comparison of electrical conductivities and optical transparency

Measurement evidence

Electrical Transport

Three-type precursors for low-temperature solution-processed void-and-crack-free copper(I) iodide films: comparison of electrical conductivities and optical transparency · Ishizaki M., Koya N., Gotoh Y. et al. · Bulletin of the Chemical Society of Japan · 2024 · uoae071

3 measurement groups · 17 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

4-point probe method

CuI(1A2P) film on glass · Thin Film

Sheet resistance and volume resistivity of CuI films after heating at 150 deg C; concentrations varied.

Geometry
thin films on glass; 4-point probe Kyowariken K-705RS
Context
Pristine CuI films from multiple precursor routes.
Measurement source
3 · 2.4 Characterization
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
CuI(1A2P) volume resistivity at 0.26 MMarked as a best value within this paper0.92 x 10^-1 Ohm cmText
Exact Reported
6 · 3.2 Fabrication of CuI film on glass substrate · Fig. 3
CuI(1A2P) volume resistivity at 0.35 M1.16 x 10^-1 Ohm cmText
Exact Reported
6 · 3.2 Fabrication of CuI film on glass substrate · Fig. 3
CuI(1A2P) volume resistivity at 0.50 M1.37 x 10^-1 Ohm cmText
Exact Reported
6 · 3.2 Fabrication of CuI film on glass substrate · Fig. 3
CuI(1A2P) sheet resistance at 0.26 M15.4 +/- 3.07 kOhm/sq+/- 3.07 kOhm/sqFigure Axis
Uncertain
4 · 3.2 Fabrication of CuI film on glass substrate · Fig. 3d
CuI(1A2P) sheet resistance at 0.35 M12.3 +/- 0.91 kOhm/sq+/- 0.91 kOhm/sqFigure Axis
Uncertain
4 · 3.2 Fabrication of CuI film on glass substrate · Fig. 3d
CuI(1A2P) sheet resistance at 0.50 MMarked as a best value within this paper10.0 +/- 0.90 kOhm/sq+/- 0.90 kOhm/sqFigure Axis
Uncertain
4 · 3.2 Fabrication of CuI film on glass substrate · Fig. 3d
CuI(2AE) sheet resistance at 0.26 M11.9 +/- 1.10 kOhm/sq+/- 1.10 kOhm/sqFigure Axis
Uncertain
4 · 3.2 Fabrication of CuI film on glass substrate · Fig. 3c
CuI(2AE) sheet resistance at 0.35 M18.6 +/- 2.83 kOhm/sq+/- 2.83 kOhm/sqFigure Axis
Uncertain
4 · 3.2 Fabrication of CuI film on glass substrate · Fig. 3c
CuI(2AE) sheet resistance at 0.50 M40.7 +/- 3.83 kOhm/sq+/- 3.83 kOhm/sqFigure Axis
Uncertain
4 · 3.2 Fabrication of CuI film on glass substrate · Fig. 3c
CuI(2AE) sheet resistance at 0.70 M35.3 +/- 2.33 kOhm/sq+/- 2.33 kOhm/sqFigure Axis
Uncertain
4 · 3.2 Fabrication of CuI film on glass substrate · Fig. 3c
CuI(DES) sheet resistance at 0.50 M207.2 +/- 56.5 kOhm/sq+/- 56.5 kOhm/sqFigure Axis
Uncertain
4 · 3.2 Fabrication of CuI film on glass substrate · Fig. 3b
CuI(DES) sheet resistance at 0.70 M44.8 +/- 14.6 kOhm/sq+/- 14.6 kOhm/sqFigure Axis
Uncertain
4 · 3.2 Fabrication of CuI film on glass substrate · Fig. 3b

Hall effect measurement using TKS-HE-1000-20 mm-C

CuI(1A2P) film on glass · Thin Film

Prepared CuI thin film, thickness 94 nm.

Geometry
thin film on glass
Context
Pristine target CuI(1A2P) film.
Measurement source
7 · 3.5 Physical properties of CuI thin films · Fig. 7a
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Carrier densityMarked as a best value within this paper6.38 x 10^19 cm^-3Text
Exact Reported
7 · 3.5 Physical properties of CuI thin films · Fig. 7a
Electrical conductivityMarked as a best value within this paper9.35 S cm^-1Text
Exact Reported
1 · Abstract
MobilityMarked as a best value within this paper0.96 cm^2 V^-1 s^-1Text
Exact Reported
7 · 3.5 Physical properties of CuI thin films · Fig. 7a
Hall-effect volume resistance1.07 x 10^-1 Ohm cmText
Exact Reported
7 · 3.5 Physical properties of CuI thin films · Fig. 7a

Bending-angle electrical resistance test

CuI(1A2P) film on PET · Thin Film

CuI(1A2P) film on PET; resistance compared during bending from 180 deg to 30 deg.

Geometry
flexible PET thin film
Context
Pristine CuI film on flexible substrate.
Measurement source
SI p015 · 3.4 Fabrication of CuI thin films on FTO and PET substrates · Supplementary Fig. S19
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
PET CuI resistance ratio trend on bendingresistance ratio gradually increases from 180 deg to 30 degText
Qualitative
SI p015 · 3.4 Fabrication of CuI thin films on FTO and PET substrates · Supplementary Fig. S19