Measurement evidence
Three-type precursors for low-temperature solution-processed void-and-crack-free copper(I) iodide films: comparison of electrical conductivities and optical transparency · Ishizaki M., Koya N., Gotoh Y. et al. · Bulletin of the Chemical Society of Japan · 2024 · uoae071
Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.
CuI(1A2P) film on glass · Thin Film
Prepared CuI thin film; PYS measured using Riken Keiki AC-3.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Bandgap | 2.98 eV | — | — | Text Exact Reported | SI p015 · 3.5 Physical properties of CuI thin films · Supplementary Fig. S20a |
| Work function | 5.16 eV | — | — | Text Exact Reported | SI p015 · 3.5 Physical properties of CuI thin films · Supplementary Fig. S20b |
CuI(1A2P) film on glass · Thin Film
CuI films on glass; average transmittance and absorption feature at 410 nm discussed.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| CuI(2AE) and CuI(1A2P) film transmittance lower bound | >86% | — | — | Text Approximate | 5 · 3.2 Fabrication of CuI film on glass substrate · Supplementary Figs. S8 and S9 |
| CuI(AN) average transmittance at 0.13 MMarked as a best value within this paper | 97% average transmittance (500 to 1000 nm) | — | — | Text Exact Reported | 4 · 3.2 Fabrication of CuI film on glass substrate |
| CuI direct-transition absorption signal | 410 nm | — | — | Text Exact Reported | 5 · 3.2 Fabrication of CuI film on glass substrate · Supplementary Figs. S8 and S9 |
| CuI(DES) average transmittance at 0.13 M | 96% | — | — | Text Exact Reported | 4 · 3.2 Fabrication of CuI film on glass substrate · Supplementary Fig. S7c |
| CuI(DES) average transmittance at 0.70 M | 58% | — | — | Text Exact Reported | 4 · 3.2 Fabrication of CuI film on glass substrate · Supplementary Fig. S7c |