Measurement evidence
Biporous Cd(II) Coordination Polymer via in Situ Disulfide Bond Formation: Self-Healing and Application to Photosensitive Optoelectronic Device · Naskar K., Dey A., Maity S. et al. · Inorganic Chemistry · 2020 · 5518-5528
Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.
ITO/compound 1/Al sandwich-structured MS junction device · Electrode
Capacitance versus frequency of compound 1 film at constant bias; saturated high-frequency capacitance used.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| relative dielectric constant | 6.10 x 10^-2 | — | — | Table Exact Reported | 8-9 · Optoelectronic Studies · Figure 9; Table 3 |
ITO/compound 1/Al sandwich-structured MS junction device · Electrode
dV/d(ln I) versus I and H(I) versus I plots under dark and illumination conditions.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| barrier height under dark conditions | 0.38 eV | — | — | Table Exact Reported | 7 · Table 2 · Table 2 |
| barrier height under illuminationMarked as a best value within this paper | 0.33 eV | — | — | Table Exact Reported | 7 · Table 2 · Table 2 |
| ideality factor under dark conditions | 2.05 | — | — | Table Exact Reported | 7 · Table 2 · Table 2 |
| ideality factor under illuminationMarked as a best value within this paper | 1.31 | — | — | Table Exact Reported | 7 · Table 2 · Table 2 |
| series resistance from dV/d(ln I), dark | 598.26 Ohm | — | — | Table Exact Reported | 7 · Table 2 · Table 2 |
| series resistance from dV/d(ln I), lightMarked as a best value within this paper | 243.85 Ohm | — | — | Table Exact Reported | 7 · Table 2 · Table 2 |
| series resistance from H(I), dark | 571.98 Ohm | — | — | Table Exact Reported | 7 · Table 2 · Table 2 |
| series resistance from H(I), lightMarked as a best value within this paper | 217.61 Ohm | — | — | Table Exact Reported | 7 · Table 2 · Table 2 |
ITO/compound 1/Al sandwich-structured MS junction device · Electrode
Bias voltage within +/-2 V; dark and illumination conditions; photoconductivity measured under 100 mW cm-2 intensity.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| electrical conductivity under dark conditions | 1.05 x 10^-3 S m-1 | — | — | Table Exact Reported | 7 · Table 2 · Table 2 |
| electrical conductivity under illuminationMarked as a best value within this paper | 2.34 x 10^-3 S m-1 | — | — | Table Exact Reported | 7 · Table 2 · Table 2 |
| illumination intensity for photoconductivity | 100 mW cm-2 | — | — | Text Exact Reported | 6 · Optoelectronic Studies |
| effective diode area | 7.065 x 10^-6 m2 | — | — | Text Exact Reported | S9 · Device Fabrication and Measurements |
| compound 1 film thickness | ~1 um | 0.000001 m | — | Text Approximate | S9 · Device Fabrication and Measurements |
| photosensitivity | 2.75 | — | — | Table Exact Reported | 7 · Table 2 · Table 2 |
| rectification ratio under dark conditions | 15.11 at +/-2 V | — | — | Table Exact Reported | 7 · Table 2 · Table 2 |
| rectification ratio under illuminationMarked as a best value within this paper | 34.76 at +/-2 V | — | — | Table Exact Reported | 7 · Table 2 · Table 2 |
ITO/Al structured leakage-control device · Electrode
ITO/Al device without coordination polymer compared qualitatively with Al/compound 1/ITO device.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Al/ITO control I-V shape | linear ohmic response; no Schottky nature | — | — | Qualitative Qualitative | S10 · Device Fabrication and Measurements · Figure S8 |
ITO/compound 1/Al sandwich-structured MS junction device · Electrode
Fixed bias +2 V under constant illumination of 100 mW cm-2 for 10 min, recorded every 60 s.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| photocurrent after 600 s at +2 V | ~0.14 A at 600 s | — | — | Figure Axis Approximate | S12 · Device Fabrication and Measurements · Figure S10 |
| initial photocurrent at +2 V | ~0.155 A at 0 s | — | — | Figure Axis Approximate | S12 · Device Fabrication and Measurements · Figure S10 |
ITO/compound 1/Al sandwich-structured MS junction device · Electrode
Log I versus log V and I versus V^2 curves; region I Ohmic, region II trap-free SCLC; dark and illumination.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| diffusion coefficient, dark | 1.04 x 10^-4 | — | — | Table Exact Reported | 9 · Table 3 · Table 3 |
| diffusion coefficient, lightMarked as a best value within this paper | 3.20 x 10^-4 | — | — | Table Exact Reported | 9 · Table 3 · Table 3 |
| diffusion length, dark | 1.23 x 10^-7 m | — | — | Table Exact Reported | 9 · Table 3 · Table 3 |
| diffusion length, lightMarked as a best value within this paper | 1.47 x 10^-7 m | — | — | Table Exact Reported | 9 · Table 3 · Table 3 |
| effective carrier mobility, dark | 4.05 x 10^-3 m2 V-1 s-1 | — | — | Table Exact Reported | 9 · Table 3 · Table 3 |
| effective carrier mobility, lightMarked as a best value within this paper | 12.41 x 10^-3 m2 V-1 s-1 | — | — | Table Exact Reported | 9 · Table 3 · Table 3 |
| transit time, dark | 7.33 x 10^-11 s | — | — | Table Exact Reported | 9 · Table 3 · Table 3 |
| transit time, lightMarked as a best value within this paper | 3.39 x 10^-11 s | — | — | Table Exact Reported | 9 · Table 3 · Table 3 |