Application RelevanceSupport assessment: High
Compound 1 is a high-k Sm-based MOF candidate for gate dielectric applications because it combines kappa = 45.1 at 310 K/5 kHz with low dielectric loss, low AC conductivity and low leakage current.
Caveat: Device integration is not demonstrated; measurements are on pressed pellets rather than thin-film transistor gate stacks.
p006 / journal page 21877 · 4. Conclusion · Linked to 4 structured results
Structure Property LinkSupport assessment: Medium
Low nitrogen uptake and small calculated extra-framework volume support low porosity and high density of the 3D Sm framework.
Caveat: No BET surface area is reported in the extracted text.
p003 / journal page 21874 · 3.2. Crystal Structure · Figure S8 · Linked to 3 structured results
Structure Property LinkSupport assessment: Medium
The high dielectric response is attributed to polarised coordinated water molecules, high framework density and hydrogen bonding in the hexagonal channels.
Caveat: Hydrated/dehydrated comparison supports but does not independently isolate each proposed contribution.
p006 / journal page 21877 · 4. Conclusion · Linked to 4 structured results
Transport MechanismSupport assessment: Medium
AC conductivity is attributed to a hopping mechanism, with frequency exponent S values near 0.91-0.94 and conductivity increasing with frequency.
Caveat: The SI temperature header conflicts with the K-labelled temperature series in the main figures.
p005 / journal page 21876 · 3.5. Electrical Conductivity Measurements · Figure 4; Table S2 · Linked to 5 structured results
Transport MechanismSupport assessment: Medium
Impedance spectroscopy supports an intrinsic crystal-grain contribution to the dielectric response, modelled by two series equivalent circuits.
Caveat: Main-text resistance value is not identical to the R2 value listed in SI Table S3.
p005 / journal page 21876 · 3.6. Impedance Behavior · Figure 5 · Linked to 5 structured results