Rana S., Prasoon A., Jha P.K. et al. · Journal of Physical Chemistry Letters · 2017 · 5008-5014
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
Ag-TCNQ thin films exhibit reversible thermally driven resistive switching between HRS at 300 K and LRS at 400 K; Cu-TCNQ thin films provide a pristine control showing analogous switching at 370 K.
Caveat: Device statistics beyond cycling plots are limited; some Cu-TCNQ control values are read from SI figure labels/caption.
5011 · Main text · Figure 3 · Linked to 5 structured results
The final Ag-TCNQ thin film is assigned as phase-I Ag-TCNQ from new PXRD peaks at 10.25, 14.5 and 21.5 degrees 2theta.
Caveat: Assignment is based on reported out-of-plane PXRD peak positions; full single-crystal/CIF data are not reported.
5009 · Main text · Figure 2b · Linked to 3 structured results
Cu-TCNQ to Ag-TCNQ transformation is interpreted as sacrificial LbL growth rather than a simple ion-exchange process.
Caveat: Mechanistic assignment is based on indirect morphology, thickness, spectroscopy and control-reaction evidence rather than in situ chemical speciation.
5010 · Main text · Figures S3-S6 referenced · Linked to 7 structured results
Lack of correlation between contact resistance and metal work function suggests Fermi-level pinning, possibly due to metal-induced gap states.
Caveat: Claim is inferred from three contacts and approximate resistance values.
5013 · Main text · Figure 5 · Linked to 6 structured results
Thermally driven switching is attributed mainly to lowering of the Schottky barrier at the metal/semiconductor interface, not bulk conductive-filament formation.
Caveat: Authors state more C-V analysis is required to conclude temperature dependency of Schottky barrier height; evidence nevertheless supports an interfacial origin.
5013 · Main text · Figure 6 · Linked to 9 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| silver tetracyanoquinodimethane coordination polymer | AgTCNQ / Ag-TCNQAg(I) · tetracyanoquinodimethane (TCNQ) radical anion | unknown · Pristinephase-I Ag-TCNQ assigned from out-of-plane PXRD peaks | 5008 · Abstract |
| copper tetracyanoquinodimethane coordination polymer | CuTCNQ / Cu-TCNQCu(I) · tetracyanoquinodimethane (TCNQ) radical anion | unknown · Pristinephase-I Cu-TCNQ assigned from out-of-plane PXRD peaks | 5009 · Main text · Figure 2 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| Ag-TCNQ thin film on SAM/Auresearch_0654__mat__mat_ag_tcnq | Thin Film · Target Sample · Pristine Framework | Final film after 10 sacrificial LbL cycles from a preformed Cu-TCNQ filmcarboxy-terminated MUDA SAM on Au-coated silicon substrate; final Ag-TCNQ formed after sacrificial Cu-TCNQ layer removal · approximately 850 nm | 5010 · Main text · Figure 2; Figure S3 referenced |
| pressed pellet of powder Cu-TCNQresearch_0654__mat__mat_cu_tcnq | Pellet · Pristine Control · Pristine Framework | Pressed pellet used for direct-pin and EGaIn contact controls | 5013 · Main text · Figure 6a,b,c |
| Cu-TCNQ thin film on SAM/Auresearch_0654__mat__mat_cu_tcnq | Thin Film · Pristine Control · Pristine Framework | Preformed Cu-TCNQ film grown by LbL; used as sacrificial layer and control thin filmcarboxy-terminated MUDA SAM on Au-coated silicon substrate · approximately 550 nm | S2 · Experimental Section |