Electrical Transport — Thermally Driven Resistive Switching in Solution-Processable Thin Films of Coordination Polymers

9 measurement groups · 28 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

capacitance-voltage (C-V), PARSTAT MC PMC-2000

Ag-TCNQ thin film on SAM/Au · Thin Film

EGaIn/Ag-TCNQ thin-film interface at 300 K, 370 K and after cooling to 300 K

Temperature: 300; 370; 300
Geometry: EGaIn/Ag-TCNQ thin-film interface
Context: pristine target film
Measurement source: 5013 · Main text · Figure 6d

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ag-TCNQ C-V high-temperature capacitance trend	larger C at high temperature than room temperature	—	—	Text Qualitative	5013 · Main text · Figure 6d
Ag-TCNQ high-temperature C-V maximum plotted capacitance	approximately 500 x 10^-9 F from Figure 6d axis	5e-7 F	visual estimate from plotted axis	Figure Axis Approximate	5012 · Figure · Figure 6d

I-V with varied top electrodes

Electrical conductivity

Ag-TCNQ thin film on SAM/Au · Thin Film

EGaIn, Ti and Pt contacts; -5 to +5 V I-V, low-voltage fits over -0.3 to +0.3 V

Temperature: 300; 400; 300
Geometry: EGaIn/Ag-TCNQ, Ti/Ag-TCNQ and Pt/Ag-TCNQ interfaces
Context: pristine target film
Measurement source: 5011-5013 · Main text · Figure 5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
maximum resistance enhancement factor across contactsMarked as a best value within this paper	as high as approximately 10^6	—	—	Text Approximate	5008 · Abstract
EGaIn/Ag-TCNQ contact HRS resistance	approximately 10^6 Ohm at 300 K	—	—	Text Approximate	5013 · Main text · Figure 5b
EGaIn/Ag-TCNQ contact LRS resistance	approximately 10 Ohm at 400 K	—	—	Text Approximate	5013 · Main text · Figure 5b
Pt/Ag-TCNQ contact HRS resistance	approximately 10^5 Ohm at 300 K	—	—	Text Approximate	5013 · Main text · Figure 5d
Pt/Ag-TCNQ contact LRS resistance	approximately 10 Ohm at 400 K	—	—	Text Approximate	5013 · Main text · Figure 5d
Ti/Ag-TCNQ contact HRS resistance	approximately 10^7 Ohm at 300 K	—	—	Text Approximate	5013 · Main text · Figure 5c
Ti/Ag-TCNQ contact LRS resistance	approximately 10 Ohm at 400 K	—	—	Text Approximate	5013 · Main text · Figure 5c
Ag-TCNQ effective work function	approximately 1.19 eV	—	—	Text Approximate	5011 · Main text · Figure 5a
EGaIn work function	approximately 4.2 eV	—	—	Text Approximate	5011 · Main text · Figure 5a
Pt work function	approximately 6.3 eV	—	—	Text Approximate	5011 · Main text · Figure 5a
Ti work function	approximately 4.3 eV	—	—	Text Approximate	5011 · Main text · Figure 5a

current-voltage (I-V), Keithley 4200 SCS

Electrical conductivity

Ag-TCNQ thin film on SAM/Au · Thin Film

EGaIn top electrodes; resistance fitted over -0.3 to +0.3 V at 300 K, 400 K, then 300 K

Temperature: 300; 400; 300
Geometry: EGaIn/Ag-TCNQ interface on thin film
Context: pristine target film
Measurement source: 5011 · Main text · Figure 3a,b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ag-TCNQ/EGaIn conductance enhancement factor	approximately 10^5	—	—	Text Approximate	5011 · Main text · Figure 3b
Ag-TCNQ/EGaIn high-resistance state	approximately 10^6 Ohm at 300 K	—	—	Text Approximate	5011 · Main text · Figure 3b
Ag-TCNQ/EGaIn low-resistance state	approximately 10 Ohm at 400 K	—	—	Text Approximate	5011 · Main text · Figure 3b

time-dependent resistance monitoring during cooling

Ag-TCNQ thin film on SAM/Au · Thin Film

Ag-TCNQ film heated to 400 K; resistance monitored every 60 s while cooling to 300 K

Temperature: 400 to 300
Geometry: Ag-TCNQ thin-film device
Context: pristine target film
Measurement source: 5013 · Main text · Figure S8 referenced

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ag-TCNQ LRS memory time	720 s	—	—	Text Exact Reported	5013 · Main text · Figure S8 referenced

resistance cycling during heating/cooling

Ag-TCNQ thin film on SAM/Au · Thin Film

Heating and cooling processes up to 10 consecutive cycles between HRS at 300 K and LRS at 400 K

Temperature: 300; 400
Geometry: EGaIn/Ag-TCNQ interface
Context: pristine target film
Measurement source: 5011 · Main text · Figure 3c,d

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
number of heating-cooling cycles tested	10 consecutive cycles	—	—	Text Exact Reported	5011 · Main text · Figure 3c
Ag-TCNQ LRS switching temperature	400 K	—	—	Text Exact Reported	5013 · Conclusion

capacitance-voltage (C-V), PARSTAT MC PMC-2000

pressed pellet of powder Cu-TCNQ · Pellet

EGaIn/Cu-TCNQ pellet interface at 300 K, 370 K and after cooling to 300 K

Temperature: 300; 370; 300
Geometry: EGaIn/Cu-TCNQ pellet interface
Context: pristine control pellet
Measurement source: 5013 · Main text · Figure 6c

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-TCNQ C-V high-temperature capacitance trend	larger C at 370 K than room temperature	—	—	Text Qualitative	5013 · Main text · Figure 6c
Cu-TCNQ high-temperature C-V maximum plotted capacitance	approximately 500 x 10^-6 F from Figure 6c axis	0.0005 F	visual estimate from plotted axis	Figure Axis Approximate	5012 · Figure · Figure 6c

I-V with direct pin contacts

Electrical conductivity

pressed pellet of powder Cu-TCNQ · Pellet

Pressed Cu-TCNQ pellet measured at 300 K, 370 K and after cooling to 300 K with direct pins

Temperature: 300; 370; 300
Geometry: two-probe direct pin contacts on Cu-TCNQ pellet
Context: pristine control pellet
Measurement source: 5013 · Main text · Figure 6a

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-TCNQ pellet direct-contact I-V character	Ohmic at both 300 K and 370 K	—	—	Text Qualitative	5013 · Main text · Figure 6a

I-V with EGaIn top electrodes

Electrical conductivity

pressed pellet of powder Cu-TCNQ · Pellet

Pressed Cu-TCNQ pellet measured at 300 K, 370 K and after cooling to 300 K using EGaIn contacts

Temperature: 300; 370; 300
Geometry: EGaIn/Cu-TCNQ pellet interface
Context: pristine control pellet
Measurement source: 5013 · Main text · Figure 6b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
EGaIn/Cu-TCNQ contact resistance relative to direct contact	higher by a factor of approximately 10^3 at 300 K	—	—	Text Approximate	5013 · Main text · Figure 6a,b
Cu-TCNQ/EGaIn resistance enhancement factor	approximately 10^3	—	—	Text Approximate	5013 · Main text · Figure 6b
Cu-TCNQ/EGaIn LRS switching temperature	370 K	—	—	Text Exact Reported	5013 · Conclusion · Figure 6b

current-voltage (I-V), Keithley 4200 SCS

Electrical conductivity

Cu-TCNQ thin film on SAM/Au · Thin Film

Cu-TCNQ thin film measured at 300 K, heating at 370 K and cooling back to 300 K.

Temperature: 300; 370; 300
Geometry: Cu-TCNQ thin-film device, top-electrode geometry not detailed in caption
Context: pristine Cu-TCNQ thin-film control
Measurement source: S4 · Figure caption · Figure S7a

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-TCNQ thin-film resistance enhancement	approximately 10^4	—	—	Caption Approximate	S4 · Figure caption · Figure S7a
Cu-TCNQ thin-film HRS resistance	approximately 10^6 Ohm at 300 K	—	—	Figure Axis Approximate	S4 · Figure label/caption · Figure S7a
Cu-TCNQ thin-film LRS resistance	approximately 10^2 Ohm at 370 K	—	—	Figure Axis Approximate	S4 · Figure label/caption · Figure S7a