Microscopy Morphology — Thermally Driven Resistive Switching in Solution-Processable Thin Films of Coordination Polymers

Measurement evidence

Microscopy Morphology

Thermally Driven Resistive Switching in Solution-Processable Thin Films of Coordination Polymers · Rana S., Prasoon A., Jha P.K. et al. · Journal of Physical Chemistry Letters · 2017 · 5008-5014

6 measurement groups · 7 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

cross-sectional FESEM

Ag-TCNQ thin film on SAM/Au · Thin Film

Cross-sectional image of Ag-TCNQ thin film from step II; inset zoomed view.

Geometry
thin film on SAM/Au after sacrificial conversion
Context
pristine target Ag-TCNQ film
Measurement source
S3 · Figure caption · Figure S3b
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Ag-TCNQ final thin-film thicknessapproximately 850 nmFigure Axis
Approximate
S3 · Figure caption/label · Figure S3b

cross-sectional FESEM

Cu-TCNQ thin film on SAM/Au · Thin Film

Cross-sectional image of Cu-TCNQ thin film from step I; inset zoomed view.

Geometry
thin film on SAM/Au substrate
Context
pristine Cu-TCNQ sacrificial/control film
Measurement source
S3 · Figure caption · Figure S3a
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Cu-TCNQ initial thin-film thicknessapproximately 550 nmFigure Axis
Approximate
S3 · Figure caption/label · Figure S3a

optical imaging

Cu-TCNQ thin film on SAM/Au · Thin Film

Pure Cu-TCNQ thin film before and after dipping into AgNO3 solution for 5 h.

Geometry
thin film on substrate
Context
sacrificial-growth mechanism control
Measurement source
S3 · Figure caption · Figure S4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Cu-TCNQ etching by AgNO3Cu-TCNQ thin film completely etched away after dipping into AgNO3 solution for 5 hText
Exact Reported
5010 · Main text · Figure S4 referenced

FESEM

Ag-TCNQ thin film on SAM/Au · Thin Film

Cu-TCNQ thin film morphology before AgNO3/TCNQ LbL and after 1 and 10 cycles.

Geometry
thin film on substrate
Context
sacrificial conversion sequence
Measurement source
S3 · Figure caption · Figure S5
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
morphological evolution during AgNO3/TCNQ cyclessmall Ag nanoparticles formed in the first cycle; over progressive cycles Cu-TCNQ nanoflakes vanished and Ag-TCNQ nanorods formedText
Qualitative
5010 · Main text · Figure S5 referenced

FESEM

Ag-TCNQ thin film on SAM/Au · Thin Film

Attempted direct Ag-TCNQ growth on SAMs with exposed -COOH, -NH2 and -SH groups.

Geometry
SAM/Au substrates with varied terminal groups
Context
control for direct Ag-TCNQ growth versus sacrificial route
Measurement source
S2 · Figure caption · Figure S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
direct Ag-TCNQ growth on varied SAM terminal groupschanging terminal groups from -COOH to -NH2 or -OH/-SH did not help grow Ag-TCNQ crystalsText
Qualitative
5009 · Main text · Figure S1 referenced

optical imaging and FESEM of solution reaction controls

Cu-TCNQ thin film on SAM/Au · Thin Film

Cu(OAc)2/TCNQ and CuI/TCNQ solution mixing controls; FESEM of Cu-TCNQ precipitate rods.

Geometry
solution/precipitate control, not device geometry
Context
mechanistic control for Cu(I) role in Cu-TCNQ formation
Measurement source
S4 · Figure caption · Figure S6
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Cu(OAc)2 plus TCNQ solution controlno precipitation upon mixing Cu(OAc)2 and TCNQ solutionsCaption
Qualitative
S4 · Figure caption · Figure S6a
CuI plus TCNQ solution controlprecipitation upon mixing CuI and TCNQ solution; FESEM showed long rods of Cu-TCNQCaption
Qualitative
S4 · Figure caption · Figure S6b,c