Computational Modelling — Structure and Electrical Transport Properties of Metal Cate-Cholate Frameworks: The Metal Center Matters†

Measurement evidence

Computational Modelling

Structure and Electrical Transport Properties of Metal Cate-Cholate Frameworks: The Metal Center Matters† · Yang M., Zhu R., Chen X. et al. · Chinese Journal of Chemistry · 2026 · 311-318

6 measurement groups · 6 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

DFT band structure and density of states using Materials Studio/CASTEP with mGGA-RSCAN

Ca-HHTP model sample · Model

Energy cutoff 489.8 eV; SCF tolerance 2.0e-6 eV/atom; 1 x 1 x 2 Monkhorst-Pack k-point mesh; Brillouin path A-Gamma-M-K-Gamma.

Geometry
bulk M-HHTP model
Context
model system for pristine framework
Measurement source
SI p.S21 · Computational Study of Electronic Properties · Figure S17
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Ca-HHTP calculated zero bandgap statementzero bandgap in calculated band structure; experimentally semiconducting behaviour attributed to defects/oxidation/grain boundaries0 eVText
Qualitative
main p.6, article p.316 · Band structure analysis by theoretical calculations · Figure 5; Figure S17

DFT band structure and density of states using Materials Studio/CASTEP with mGGA-RSCAN

Co-HHTP model sample · Model

Energy cutoff 489.8 eV; SCF tolerance 2.0e-6 eV/atom; 1 x 1 x 2 Monkhorst-Pack k-point mesh; Brillouin path A-Gamma-M-K-Gamma.

Geometry
bulk M-HHTP model
Context
model system for pristine framework
Measurement source
SI p.S21 · Computational Study of Electronic Properties · Figure S17
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Co-HHTP calculated zero bandgap statementzero bandgap in calculated band structure; experimentally semiconducting behaviour attributed to defects/oxidation/grain boundaries0 eVText
Qualitative
main p.6, article p.316 · Band structure analysis by theoretical calculations · Figure 5; Figure S17

DFT band structure and density of states using Materials Studio/CASTEP with mGGA-RSCAN

Cu-HHTP model sample · Model

Energy cutoff 489.8 eV; SCF tolerance 2.0e-6 eV/atom; 1 x 1 x 2 Monkhorst-Pack k-point mesh; Brillouin path A-Gamma-M-K-Gamma.

Geometry
bulk M-HHTP model
Context
model system for pristine framework
Measurement source
SI p.S21 · Computational Study of Electronic Properties · Figure S17
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Cu-HHTP calculated zero bandgap statementzero bandgap in calculated band structure; experimentally semiconducting behaviour attributed to defects/oxidation/grain boundaries0 eVText
Qualitative
main p.6, article p.316 · Band structure analysis by theoretical calculations · Figure 5; Figure S17

DFT band structure and density of states using Materials Studio/CASTEP with mGGA-RSCAN

Mg-HHTP model sample · Model

Energy cutoff 489.8 eV; SCF tolerance 2.0e-6 eV/atom; 1 x 1 x 2 Monkhorst-Pack k-point mesh; Brillouin path A-Gamma-M-K-Gamma.

Geometry
bulk M-HHTP model
Context
model system for pristine framework
Measurement source
SI p.S21 · Computational Study of Electronic Properties · Figure S17
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Mg-HHTP calculated zero bandgap statementzero bandgap in calculated band structure; experimentally semiconducting behaviour attributed to defects/oxidation/grain boundaries0 eVText
Qualitative
main p.6, article p.316 · Band structure analysis by theoretical calculations · Figure 5; Figure S17

DFT band structure and density of states using Materials Studio/CASTEP with mGGA-RSCAN

Ni-HHTP model sample · Model

Energy cutoff 489.8 eV; SCF tolerance 2.0e-6 eV/atom; 1 x 1 x 2 Monkhorst-Pack k-point mesh; Brillouin path A-Gamma-M-K-Gamma.

Geometry
bulk M-HHTP model
Context
model system for pristine framework
Measurement source
SI p.S21 · Computational Study of Electronic Properties · Figure S17
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Ni-HHTP calculated zero bandgap statementzero bandgap in calculated band structure; experimentally semiconducting behaviour attributed to defects/oxidation/grain boundaries0 eVText
Qualitative
main p.6, article p.316 · Band structure analysis by theoretical calculations · Figure 5; Figure S17

DFT band structure and density of states using Materials Studio/CASTEP with mGGA-RSCAN

Zn-HHTP model sample · Model

Energy cutoff 489.8 eV; SCF tolerance 2.0e-6 eV/atom; 1 x 1 x 2 Monkhorst-Pack k-point mesh; Brillouin path A-Gamma-M-K-Gamma.

Geometry
bulk M-HHTP model
Context
model system for pristine framework
Measurement source
SI p.S21 · Computational Study of Electronic Properties · Figure S17
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Zn-HHTP calculated zero bandgap statementzero bandgap in calculated band structure; experimentally semiconducting behaviour attributed to defects/oxidation/grain boundaries0 eVText
Qualitative
main p.6, article p.316 · Band structure analysis by theoretical calculations · Figure 5; Figure S17