Metal precursorsAu source/drain electrode
Solventsdeionized water, acetone, isopropanol for substrate cleaning
AdditivesC10-DNTT semiconductor
Atmospherenitrogen drying; evaporation atmosphere not specified
Substrate orientationITO glass, bottom-gate top-contact geometry
Oxidant / reductantO2 plasma
Work-upITO cleaned with deionized water, acetone, isopropanol; dried with nitrogen; O2 plasma (50 W, 5 min); dielectric spin-coated; 20 nm C10-DNTT thermally evaporated at 0.05 A/s; 20 nm Au evaporated through shadow mask.
Scalability context48-device arrays shown; no yield or scale-up recipe.
Show 6 structured reagent records
| Role | Reagent | Amount / concentration | Source |
|---|
| Solvent | deionized water | Not specified | 2 · 2.1 Device Fabrication · Figure 2A,B |
| Solvent | acetone | Not specified | 2 · 2.1 Device Fabrication · Figure 2A,B |
| Solvent | isopropanol | Not specified | 2 · 2.1 Device Fabrication · Figure 2A,B |
| Other | C10-DNTT | 20 nm film | 2 · 2.1 Device Fabrication · Figure 2A,B |
| Other | Au | 20 nm electrode | 2 · 2.1 Device Fabrication · Figure 2A,B |
| Oxidant | O2 plasma | 50 W, 5 min | 2 · 2.1 Device Fabrication · Figure 2A,B |