Zhang Y., Han Y., Deng F. et al. · Carbon Energy · 2024 · e580
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
Ge@Ni3(HITP)2 anodes improve Ge-air battery lifetime versus bare Ge, especially at high current density and at 50 deg C.
Caveat: Device-level tests use a composite cell architecture, not isolated MOF conductivity.
p010-p013 · 3 and 4 · Figures 6 and 8 · Linked to 8 structured results
The gel electrolyte and Ge-air battery stack showed flame-exposure safety in the reported qualitative tests.
Caveat: Video evidence S1-S3 was referenced but not provided in the local inputs.
p012-p013 · 3 · Figure 8F-H, Videos S1-S3 · Linked to 1 structured result
High temperature also accelerates passivation, hydrogen evolution, and voltage oscillation, reducing bare-Ge life and limiting performance at high current density.
Caveat: High-temperature morphology evidence is mainly qualitative, with EDS Table S2 providing exact oxygen/Ge contents after 48 h at 65.0 uA cm^-2.
p012 · 3 · Figure 8, Figures S5-S9 · Linked to 6 structured results
Depositing Ni3(HITP)2 on Ge reduces water affinity and suppresses self-corrosion/passivation of the Ge anode.
Caveat: EIS charge-transfer resistance increases slightly for the coated anode, so corrosion suppression is supported mainly by Tafel, contact-angle/DFT, EDS oxygen content, and discharge morphology evidence.
p008-p012 · 3 · Figures 6, S1, S2, S6-S7; Tables S1-S2 · Linked to 14 structured results
Ni3(HITP)2 powder forms an ordered 2D honeycomb/1D-channel conductive MOF consistent with literature Ni3(HITP)2.
Caveat: No CIF or Rietveld refinement supplied.
p005-p007 · 3 · Figures 2-3, Table 1 · Linked to 7 structured results
The Ni3(HITP)2 film uniformly adheres to the Ge substrate and creates a smooth, evenly distributed protective layer.
Caveat: Thickness is approximate and based on SEM/AFM of selected regions.
p007 · 3 · Figure 4 · Linked to 3 structured results
The conductivity of Ge@Ni3(HITP)2 increases with temperature, helping high-temperature Ge-air battery discharge at low current density.
Caveat: Conductivity values were not numerically reported and are visual estimates from Figure 5C.
p008,p012-p013 · 3 and 4 · Figure 5C · Linked to 4 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| bare Ge anode | Genone · none | 0D · UnknownHeavily doped p-type Ge(100) wafer control. | p003 · 2.1 |
| Ge@Ni3(HITP)2 anodeBrowse family: Ni₃(HITP)₂ / Ni–HITP | Ge@Ni3(HITP)2Ni centres in Ni3(HITP)2 film on Ge wafer · HITP framework film on Ge | 2D · CompositeComposite anode made by depositing a Ni3(HITP)2 film on a heavily doped p-type Ge(100) wafer. | p003 · 2.2 · Figure 1A |
| Ni3(HITP)2Browse family: Ni₃(HITP)₂ / Ni–HITP | Ni3(HITP)2Ni coordination centres; Ni-N first shell · HITP = 2,3,6,7,10,11-hexaiminotriphenylene; precursor HATP.6HCl | 2D · Pristine2D honeycomb hexagonal conductive MOF with ordered one-dimensional channel structure and layered stacking. | p003 · Introduction |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| bare Ge anoderesearch_0798__mat__mat_bare_ge | Electrode · Pristine Control · Unknown | single-sided polished Ge wafer assembled directly as anode controlheavily doped p-type Ge(100) wafer · wafer thickness about 0.8 mm | p003 · 2.1 |
| Ge-air CR2032 cell with bare Ge anoderesearch_0798__mat__mat_bare_ge | Electrode · Pristine Control · Composite | bare Ge anode, 6 M KOH/CMC gel electrolyte, Pt/C-Nafion air cathode on integrated electrodeCR2032 coin air battery model | p004 · 2.3 · Figure 1B |
| Ge-air CR2032 cell with Ge@Ni3(HITP)2 anoderesearch_0798__mat__mat_ge_ni3_hitp2 | Electrode · Composite Sample · Composite | Ge@Ni3(HITP)2 anode, 6 M KOH/CMC gel electrolyte, Pt/C-Nafion air cathode on integrated electrodeCR2032 coin air battery model | p004 · 2.3 · Figure 1B |
| Ge@Ni3(HITP)2 anoderesearch_0798__mat__mat_ge_ni3_hitp2 | Electrode · Target Sample · Composite | Ni3(HITP)2 film deposited at gas-liquid interface, dried at 50 deg C for 8 h, ethanol-soaked for 8 h, then vacuum driedheavily doped p-type Ge(100) wafer, about 1.4 cm diameter and about 0.8 mm thick · Ni3(HITP)2 film approximately 340.8 nm by SEM cross-section; 388 nm by AFM boundary | p003 · 2.2 · Figure 1A |
| DFT model of H2O adsorbed on Ge substrateresearch_0798__mat__mat_bare_ge | Model · Model System · Model | ATK/PBE model, Ge lattice constant a = b = 16.00 Angstrom and vacuum slice larger than 20 AngstromGe substrate model · 448 Ge atoms, 14 layers | p005 · 2.5 · Figure S2 |
| DFT model of H2O adsorbed on Ni3(HITP)2research_0798__mat__mat_ni3_hitp2 | Model · Model System · Model | ATK/PBE model, Ni3(HITP)2 lattice constants a = 21.74 Angstrom, b = 37.91 Angstrom, c = 44.29 Angstrom | p005 · 2.5 · Figure S2 |
| Ni3(HITP)2 powderresearch_0798__mat__mat_ni3_hitp2 | Powder · Pristine Control · Pristine Framework | precipitate centrifuged, repeatedly washed with distilled water and ethanol, then dried in a vacuum oven | p004 · 2.2 |