Synthesis · Enhancement of the performance of Ge–air batteries under high temperatures using conductive MOF-modified Ge anodes

3 structured synthesis routes

Completeness describes how fully the route could be reconstructed from the main article and supporting information.

Partial recipeSource: Main

Route 1: Other

p004 · 2.3 · Figure 1B

Metal precursorsbare Ge or Ge@Ni3(HITP)2 anode; Pt/C cathode catalyst

Solventsisopropanol; 6 M KOH solution

AdditivesNafion; carboxymethyl cellulose (CMC)

Atmosphereair cathode / coin air battery

Substrate orientationCR2032 coin air battery stack

Oxidant / reductantoxygen from air as cathode reactant during operation

Work-upPt/C/Nafion/isopropanol slurry ultrasonically mixed and coated on integrated electrode, dried, then assembled with KOH-CMC gel electrolyte and anode

Show 5 structured reagent records

Role	Reagent	Amount / concentration	Source
Other	Pt/C	2.8 mg	p004 · 2.3 · Figure 1B
Additive	Nafion	700 uL	p004 · 2.3 · Figure 1B
Solvent	isopropanol	300 uL	p004 · 2.3 · Figure 1B
Electrolyte	KOH solution	gel electrolyte volume around 1 x 10^3 mm^3 per battery · 6 M	p004 · 2.3 · Figure 1B
Additive	CMC	KOH solution:CMC mass ratio 20:3	p004 · 2.3 · Figure 1B

Partial recipeSource: Main

Route 2: Air Liquid Interface

p003 · 2.2 · Figure 1A

Metal precursorsNiCl2.6H2O, 6.6 mg dispersed in 15 mL deionised water

Linker precursorsHATP.6HCl, 10 mg dispersed in 15 mL deionised water

Solventsdeionised water; ethanol workup

AdditivesNH4OH, 0.3 mL

Atmospheregas-liquid interface; ambient atmosphere not otherwise specified

Temperature65

Time0.5 h pre-heating/mixing plus about 30 s before Ge insertion; 8 h drying at 50 deg C; 8 h ethanol soak

Substrate orientationGe substrate diagonally inserted along beaker wall then adjusted parallel to the interfacial film before lifting

Work-upfilm-coated anode dried in vacuum furnace at 50 deg C for 8 h, soaked in ethanol for 8 h to remove residual raw materials

Activationplaced in a vacuum oven until ready for use; final time not specified

Scalability contextAuthors describe the preparation as easy to operate; film thickness can be adjusted by reaction time and reactant concentration.

Show 6 structured reagent records

Role	Reagent	Amount / concentration	Source
Metal Source	NiCl2.6H2O	6.6 mg · dispersed in 15 mL deionized water	p003 · 2.2 · Figure 1A
Linker	HATP.6HCl	10 mg · dispersed in 15 mL deionized water	p003 · 2.2 · Figure 1A
Base	NH4OH	0.3 mL	p003 · 2.2 · Figure 1A
Solvent	deionized water	15 mL + 15 mL	p003 · 2.2 · Figure 1A
Solvent	ethanol	soak for 8 h	p003 · 2.2 · Figure 1A
Other	heavily doped p-type Ge(100) wafer	diameter approximately 1.4 cm, thickness about 0.8 mm	p003 · 2.2 · Figure 1A

Partial recipeSource: Main

Route 3: Air Liquid Interface

p004 · 2.2

Metal precursorsNiCl2.6H2O, 6.6 mg initially used in reaction solution

Linker precursorsHATP.6HCl, 10 mg initially used in reaction solution

Solventsdeionised water; distilled water and ethanol washes

AdditivesNH4OH

Atmospheregas-liquid interface; ambient atmosphere not otherwise specified

Temperature65

Time0.5 h initial heating/mixing; continued at 65 deg C until a large amount of sediment appeared

Work-upfilm removed, reaction continued, precipitate centrifuged, repeatedly washed with distilled water and ethanol, dried in vacuum oven

Activationvacuum drying; time and temperature for powder not specified

Show 5 structured reagent records

Role	Reagent	Amount / concentration	Source
Metal Source	NiCl2.6H2O	6.6 mg · initial reaction solution	p004 · 2.2
Linker	HATP.6HCl	10 mg · initial reaction solution	p004 · 2.2
Base	NH4OH	0.3 mL	p004 · 2.2
Solvent	deionized water	30 mL total initial dispersion	p004 · 2.2
Solvent	distilled water and ethanol	repeated washing	p004 · 2.2