Two-terminal DC resistance across IDE vs electrochemical synthesis time
Electrochemically synthesised Cu3(HHTP)2 on Pt/glass IDE (2 h growth) · Electrode
Resistance between IDE contact pads measured for five separate IDEs after 1 min-4 h growth; multimeter
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| IDE resistance after 10 min electrochemical growth (from Fig 5) | ~580 Ohm (Figure 5, 10 min point) | — | read from figure with error bar | Figure Axis Approximate | 6 · 3.2 Morphology and Resistance Studies · Figure 5 |
| IDE resistance after 1 min electrochemical growth (from Fig 5) | ~1600 Ohm (Figure 5, 1 min point) | — | read from figure with large error bar | Figure Axis Approximate | 6 · 3.2 Morphology and Resistance Studies · Figure 5 |
| IDE resistance after 2 h electrochemical growth (lowest, from Fig 5)Marked as a best value within this paper | ~130 Ohm (Figure 5, 2 h point) | — | read from log-scale scatter with error bars | Figure Axis Approximate | 6 · 3.2 Morphology and Resistance Studies · Figure 5 |
| IDE resistance after 30 min electrochemical growth (from Fig 5) | ~480 Ohm (Figure 5, 30 min point) | — | read from figure with error bar | Figure Axis Approximate | 6 · 3.2 Morphology and Resistance Studies · Figure 5 |
| IDE resistance after 4 h electrochemical growth (from Fig 5) | ~180 Ohm (Figure 5, 4 h point) | — | read from figure with error bar | Figure Axis Approximate | 6 · 3.2 Morphology and Resistance Studies · Figure 5 |
| IDE resistance after annealing (pre-growth start point) | 20-40 kOhm | — | range 20-40 kOhm | Text Range | 3 · 2.1 Nanoparticle Deposition |
| IDE resistance, as-deposited Cu nanoparticles (pre-anneal) | 100-300 kOhm | — | range 100-300 kOhm | Text Range | 3 · 2.1 Nanoparticle Deposition |