Sensing Application — Self-Powered Infrared Photodetectors with Ultra-High Speed and Detectivity Based on Amorphous Cu-Based MOF Films

Measurement evidence

Sensing Application

Self-Powered Infrared Photodetectors with Ultra-High Speed and Detectivity Based on Amorphous Cu-Based MOF Films · Gao S., Huang Y., Tan J. et al. · ACS Applied Materials and Interfaces · 2023 · 32637-32646

6 measurement groups · 25 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Annealing stability test followed by photoresponse measurement

p-a-Cu-HHTP/n-Si self-powered photodetector · Electrode

Prepared photodetector annealed at 313-453 K for 1 h and measured after cooling; Figure 4 also shows behaviour above 453 K by axis.

Temperature
313-453 K for text-reported stability; figure axis extends to about 500 K
Geometry
p-a-Cu-HHTP/n-Si heterojunction
Context
application device using pristine MOF active film
Measurement source
p006 · Results and Discussion · Figure 4g-i
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Maximum annealing temperature with no degradation453 K (180 deg C) for 1 h180 deg CText
Exact Reported
p006 · Results and Discussion · Figure 4g-i
Decay time after annealing at 453 K65 us in text; Figure 4i label reads 60 us0.065 msText
Uncertain
p006 · Results and Discussion · Figure 4i
Rise time after annealing at 453 K45 us0.045 msText
Exact Reported
p006 · Results and Discussion · Figure 4i
Photocurrent drop above 453 KIph drops sharply above 453 KText
Qualitative
p006 · Results and Discussion · Figure 4g

Current-voltage measurement under dark and 980 nm illumination

p-a-Cu-HHTP/n-Si self-powered photodetector · Electrode

p-a-Cu-HHTP/n-Si photodetector under dark and 980 nm, 1000 uW cm-2 illumination.

Geometry
p-a-Cu-HHTP/n-Si heterojunction with Ag contacts
Context
application device using pristine MOF active film
Measurement source
p005 · Results and Discussion · Figure 4c
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Photocurrent to dark current ratio7.8 x 10^3Text
Exact Reported
p005 · Results and Discussion · Figure 4c
Dark I-V rectificationsignificant rectification characteristics under dark conditionsText
Qualitative
p005 · Results and Discussion · Figure 4c

Photocurrent, responsivity, detectivity, and response-time measurements

p-a-Cu-HHTP/n-Si self-powered photodetector · Electrode

Self-powered p-a-Cu-HHTP/n-Si photodetector at 0 V bias under 980 nm light and varied optical power densities.

Temperature
ambient
Geometry
effective area 6 mm2
Context
application device using pristine MOF active film
Measurement source
p005 · Results and Discussion · Figure 4b,d-f; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Self-powered bias0 VTable
Exact Reported
p006 · Results and Discussion · Table 1
Decay timeMarked as a best value within this paper50 us0.05 msText
Exact Reported
p006 · Results and Discussion · Figure 4f; Table 1
Detectivity at 1000 uW cm-2about 5.5 x 10^11 JonesFigure Axis
Approximate
p005 · Results and Discussion · Figure 4e
Effective photodetector area6 mm2Text
Exact Reported
p005 · Results and Discussion · Equation 2
Maximum detectivity at 100 uW cm-2Marked as a best value within this paper1.2 x 10^12 JonesText
Exact Reported
p005 · Results and Discussion · Figure 4e; Table 1
Maximum responsivity at 100 uW cm-2Marked as a best value within this paper41 mA W-1Text
Exact Reported
p005 · Results and Discussion · Figure 4e; Table 1
Photocurrent range over 100-1000 uW cm-2about 0.26 to about 0.71 uAFigure Axis
Approximate
p005 · Results and Discussion · Figure 4d
Photocurrent power-law exponentIph proportional to P^0.42Text
Exact Reported
p005 · Results and Discussion · Figure 4d
Responsivity at 1000 uW cm-2about 11 mA W-1Figure Axis
Approximate
p005 · Results and Discussion · Figure 4e
Rise timeMarked as a best value within this paper40 us0.04 msText
Exact Reported
p006 · Results and Discussion · Figure 4f; Table 1
Photodetector wavelength980 nmTable
Exact Reported
p006 · Results and Discussion · Table 1

Bending-cycle stability test

flexible p-a-Cu-HHTP MSM photodetector on PI · Electrode

Flexible MSM device bent 120 times around glass tubes with radii 1.5 cm and 0.75 cm.

Geometry
MSM device on PI substrate with Ag electrodes
Context
flexible application device using pristine MOF active film
Measurement source
p007 · Results and Discussion · Figure 5d
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Bending cycles tested120 timesText
Exact Reported
p007 · Results and Discussion · Figure 5d
Normalised photoresponse after 120 bending cyclesabout 0.98 Iph,bend/Iph,rest after 120 cycles0.98 Iph,bend/Iph,restFigure Axis
Approximate
p006 · Results and Discussion · Figure 5d
Large bending radius1.5 cmText
Exact Reported
p007 · Results and Discussion · Figure 5d
Small bending radius0.75 cmText
Exact Reported
p007 · Results and Discussion · Figure 5d

Current-voltage measurement under dark and 980 nm illumination

flexible p-a-Cu-HHTP MSM photodetector on PI · Electrode

Flexible MSM p-a-Cu-HHTP photodetector measured in dark and under 980 nm illumination at 20 V bias.

Geometry
MSM device on PI substrate with Ag electrodes
Context
flexible application device using pristine MOF active film
Measurement source
p006 · Results and Discussion · Figure 5b
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
MSM I-V bias voltage20 VText
Exact Reported
p006 · Results and Discussion · Figure 5b
MSM contact behaviourlinear inset I-V relationship indicating good Ohmic contactText
Qualitative
p007 · Results and Discussion · Figure 5b

Current-time switching measurement

flexible p-a-Cu-HHTP MSM photodetector on PI · Electrode

MSM PD exposed to 980 nm light at 1000 uW cm-2 with periodic on/off switching.

Geometry
MSM device on PI substrate with Ag electrodes
Context
flexible application device using pristine MOF active film
Measurement source
p007 · Results and Discussion · Figure 5c
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
MSM current switching rangeabout 2.97 to about 3.04 nAFigure Axis
Approximate
p006 · Results and Discussion · Figure 5c
MSM switching cycle40 sText
Exact Reported
p007 · Results and Discussion · Figure 5c