Annealing stability test followed by photoresponse measurement
p-a-Cu-HHTP/n-Si self-powered photodetector · Electrode
Prepared photodetector annealed at 313-453 K for 1 h and measured after cooling; Figure 4 also shows behaviour above 453 K by axis.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Maximum annealing temperature with no degradation | 453 K (180 deg C) for 1 h | 180 deg C | — | Text Exact Reported | p006 · Results and Discussion · Figure 4g-i |
| Decay time after annealing at 453 K | 65 us in text; Figure 4i label reads 60 us | 0.065 ms | — | Text Uncertain | p006 · Results and Discussion · Figure 4i |
| Rise time after annealing at 453 K | 45 us | 0.045 ms | — | Text Exact Reported | p006 · Results and Discussion · Figure 4i |
| Photocurrent drop above 453 K | Iph drops sharply above 453 K | — | — | Text Qualitative | p006 · Results and Discussion · Figure 4g |