cMOF Evidence Base

Synthesis evidence

Chemical sensors based on ionically conductive metal-organic frameworks for selective cadaverine detection

Zhang S., Li L., Lu Y. et al. · Journal of Materials Chemistry C · 2022 · 5497-5504

5 structured synthesis routes

Completeness describes how fully the route could be reconstructed from the main article and supporting information.

Partial recipeSource: Main

Route 1: Liquid Liquid Interface

main p.6, article p.5502 · Materials and preparation

Metal precursorsCobalt(II) nitrate trihydrate Co(NO3)2.6H2O, 1 mM in deionized water
Linker precursorsH2THPP, 0.2 mM in methanol
SolventsMethanol; deionized water
AtmosphereAmbient during film formation and drying; vacuum during final heating
TemperatureRoom temperature film formation; 80 C final heating
Time2 h final vacuum heating; film formation time not specified
Substrate orientationFree-standing film formed at water surface and deposited on ITO interdigital electrode
Work-upResidual reaction solution removed carefully by syringe; free-standing film deposited on ITO; naturally dried.
ActivationHeated at 80 C under vacuum for 2 h to remove remaining moisture.
Show 4 structured reagent records
RoleReagentAmount / concentrationSource
Metal SourceCo(NO3)2.6H2O1 mMmain p.6, article p.5502 · Materials and preparation
LinkerH2THPP0.2 mMmain p.6, article p.5502 · Materials and preparation
SolventmethanolNot specifiedmain p.6, article p.5502 · Materials and preparation
Solventdeionized waterNot specifiedmain p.6, article p.5502 · Materials and preparation
Partial recipeSource: Main

Route 2: Liquid Liquid Interface

main p.6, article p.5502 · Preparation of IC-MOF thin films by a modified spray liquid-interface process

Metal precursorsCopper(II) nitrate trihydrate Cu(NO3)2.3H2O, 1 mM in deionized water
Linker precursorsH2THPP, 0.2 mM in methanol
SolventsMethanol; deionized water
AtmosphereAmbient during film formation and drying; vacuum during final heating
TemperatureRoom temperature film formation; 80 C final heating
Time2 h final vacuum heating; film formation time not specified
Substrate orientationFree-standing film formed at water surface and deposited on ITO interdigital electrode
Work-upResidual reaction solution removed carefully by syringe; free-standing film deposited on ITO; naturally dried.
ActivationHeated at 80 C under vacuum for 2 h to remove remaining moisture.
Scalability contextThe authors describe simple fabrication and low cost, but do not report yield or scale.
Show 4 structured reagent records
RoleReagentAmount / concentrationSource
Metal SourceCu(NO3)2.3H2O1 mMmain p.6, article p.5502 · Preparation of IC-MOF thin films by a modified spray liquid-interface process
LinkerH2THPP0.2 mMmain p.6, article p.5502 · Preparation of IC-MOF thin films by a modified spray liquid-interface process
SolventmethanolNot specifiedmain p.6, article p.5502 · Preparation of IC-MOF thin films by a modified spray liquid-interface process
Solventdeionized waterNot specifiedmain p.6, article p.5502 · Preparation of IC-MOF thin films by a modified spray liquid-interface process
Partial recipeSource: Main

Route 3: Liquid Liquid Interface

main p.6, article p.5502 · Materials and preparation

Metal precursorsMagnesium(II) nitrate trihydrate Mg(NO3)2.6H2O, 1 mM in deionized water
Linker precursorsH2THPP, 0.2 mM in methanol
SolventsMethanol; deionized water
AtmosphereAmbient during film formation and drying; vacuum during final heating
TemperatureRoom temperature film formation; 80 C final heating
Time2 h final vacuum heating; film formation time not specified
Substrate orientationFree-standing film formed at water surface and deposited on ITO interdigital electrode
Work-upResidual reaction solution removed carefully by syringe; free-standing film deposited on ITO; naturally dried.
ActivationHeated at 80 C under vacuum for 2 h to remove remaining moisture.
Show 4 structured reagent records
RoleReagentAmount / concentrationSource
Metal SourceMg(NO3)2.6H2O1 mMmain p.6, article p.5502 · Materials and preparation
LinkerH2THPP0.2 mMmain p.6, article p.5502 · Materials and preparation
SolventmethanolNot specifiedmain p.6, article p.5502 · Materials and preparation
Solventdeionized waterNot specifiedmain p.6, article p.5502 · Materials and preparation
Partial recipeSource: Main

Route 4: Liquid Liquid Interface

main p.6, article p.5502 · Materials and preparation

Metal precursorsNickel(II) nitrate trihydrate Ni(NO3)2.6H2O, 1 mM in deionized water
Linker precursorsH2THPP, 0.2 mM in methanol
SolventsMethanol; deionized water
AtmosphereAmbient during film formation and drying; vacuum during final heating
TemperatureRoom temperature film formation; 80 C final heating
Time2 h final vacuum heating; film formation time not specified
Substrate orientationFree-standing film formed at water surface and deposited on ITO interdigital electrode
Work-upResidual reaction solution removed carefully by syringe; free-standing film deposited on ITO; naturally dried.
ActivationHeated at 80 C under vacuum for 2 h to remove remaining moisture.
Show 4 structured reagent records
RoleReagentAmount / concentrationSource
Metal SourceNi(NO3)2.6H2O1 mMmain p.6, article p.5502 · Materials and preparation
LinkerH2THPP0.2 mMmain p.6, article p.5502 · Materials and preparation
SolventmethanolNot specifiedmain p.6, article p.5502 · Materials and preparation
Solventdeionized waterNot specifiedmain p.6, article p.5502 · Materials and preparation
Partial recipeSource: Main

Route 5: Liquid Liquid Interface

main p.6, article p.5502 · Preparation of IC-MOF thin films by a modified spray liquid-interface process

Metal precursorsZinc(II) nitrate trihydrate Zn(NO3)2.6H2O, 1 mM in deionized water
Linker precursorsH2THPP, 0.2 mM in methanol
SolventsMethanol; deionized water
AtmosphereAmbient during film formation and drying; vacuum during final heating
TemperatureRoom temperature film formation; 80 C final heating
Time2 h final vacuum heating; film formation time not specified
Substrate orientationFree-standing film formed at water surface and deposited on ITO interdigital electrode
Work-upResidual reaction solution removed carefully by syringe; free-standing film deposited on ITO; naturally dried.
ActivationHeated at 80 C under vacuum for 2 h to remove remaining moisture.
Show 4 structured reagent records
RoleReagentAmount / concentrationSource
Metal SourceZn(NO3)2.6H2O1 mMmain p.6, article p.5502 · Preparation of IC-MOF thin films by a modified spray liquid-interface process
LinkerH2THPP0.2 mMmain p.6, article p.5502 · Preparation of IC-MOF thin films by a modified spray liquid-interface process
SolventmethanolNot specifiedmain p.6, article p.5502 · Preparation of IC-MOF thin films by a modified spray liquid-interface process
Solventdeionized waterNot specifiedmain p.6, article p.5502 · Preparation of IC-MOF thin films by a modified spray liquid-interface process