| DFT eclipsed AA-stacked Fe3(THT)2(NH4)3 multilayer modelresearch_0001__mat__fe3_tht2_nh4_3_2d_mof | Model · Model System · Model | DFT-optimised model.not_applicable · Periodic multilayer model with explicit NH4+ counterions. | SI p.21/44 · Electronic structure of Fe3(THT)2 2D MOFs with NH4+ counter ions · Fig. S12 |
| DFT inclined AA-stacked Fe3(THT)2(NH4)3 multilayer modelresearch_0001__mat__fe3_tht2_nh4_3_2d_mof | Model · Model System · Model | DFT-optimised model.not_applicable · Periodic multilayer model with explicit NH4+ counterions. | SI p.4/44 · First-principle calculations of Fe3(THT)2(NH4)3 layers · Fig. S9 |
| DFT Fe3(THT)2(NH4)3 monolayer modelresearch_0001__mat__fe3_tht2_nh4_3_2d_mof | Model · Model System · Model | DFT-optimised model.not_applicable · Monolayer slab with 10 A vacuum and explicit NH4+ counterions. | SI p.20/44 · Electronic structure of Fe3(THT)2 2D MOFs with NH4+ counter ions · Fig. S11 |
| Large-area free-standing Fe3(THT)2(NH4)3 multilayer filmresearch_0001__mat__fe3_tht2_nh4_3_2d_mof | Thin Film · Target Sample · Pristine Framework | Filtered on 0.45 um Nylon membrane, washed, peeled/transferred and dried at 60 C under Ar overnight.Initially formed as a free-standing film at the CHCl3/water interface; transferred to substrates including SiO2/Si. · Thickness tunable by reaction time; about 2 um after 72 h in main methods. | main Methods page · Synthesis of Fe3(THT)2(NH4)3 2D MOF film |
| Laser-ablated Hall-bar Fe3(THT)2(NH4)3 deviceresearch_0001__mat__fe3_tht2_nh4_3_2d_mof | Thin Film · Target Sample · Pristine Framework | Cold laser ablation Hall bar with Cr/Au contacts made by electron-beam lithography and thermal evaporation.Si/SiO2 wafer with 300 nm SiO2. · 1.7 um Fe3(THT)2(NH4)3 layer; W = 300 um for four-probe calculations. | main Methods page · Hall bar fabrication · Supplementary Fig. 15 |
| High-mobility variable-temperature TRTS filmresearch_0001__mat__fe3_tht2_nh4_3_2d_mof | Thin Film · Target Sample · Pristine Framework | Measured by TRTS under vacuum from 300 K to 100 K.Not specified for TRTS; quantum-yield estimate refers to a 1.7 um thick sample. · 1.7 um in SI charge-density estimate. | SI p.26/44 · Calculation of charge carrier density, quantum yield and mean free path · Fig. S14 |
| Low-mobility TRTS Fe3(THT)2(NH4)3 film sampleresearch_0001__mat__fe3_tht2_nh4_3_2d_mof | Thin Film · Target Sample · Pristine Framework | Measured by variable-temperature THz photoconductivity.Not specified. · Not specified. | SI p.25/44 · Photoconductivity of Fe3(THT)2(NH4)3 2D MOFs by THz spectroscopy · Fig. S13 |
| Room-temperature TRTS Fe3(THT)2(NH4)3 film sampleresearch_0001__mat__fe3_tht2_nh4_3_2d_mof | Thin Film · Target Sample · Pristine Framework | Measured by optical pump-THz probe under nitrogen.Not specified for the TRTS film in the extracted text. · Not specified for Fig. 2 sample. | main p.3, article p.1029 · Photoconductivity of Fe3(THT)2(NH4)3 2D MOF by TRTS · Fig. 2 |
| 70 nm two-probe Fe3(THT)2(NH4)3 film deviceresearch_0001__mat__fe3_tht2_nh4_3_2d_mof | Thin Film · Target Sample · Pristine Framework | Transferred film with top-contact Au electrodes; channel length 100 um, width 4.5 mm.n-doped Si wafer with 300 nm SiO2 dielectric. · 70 +/- 1 nm; additional room-temperature devices from 20 nm to 1.7 um. | SI p.38/44 · DC conductivity of the Fe3(THT)2(NH4)3 2D MOF film from 2-probe method · Fig. S22 |