Electrical Transport — High-mobility band-like charge transport in a semiconducting two-dimensional metal–organic framework

5 measurement groups · 24 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Laser-ablated Hall-bar Fe3(THT)2(NH4)3 device · Thin Film

Conductance measured between parallel contact pairs without magnetic field; measurements in dark under high vacuum.

Temperature: 100-300
Atmosphere: vacuum below 6e-8 mbar
Geometry: Hall bar; current from contact 1 to 5; voltage across contacts 2-3, 3-4, 6-7 or 7-8; W = 300 um, t = 1.7 um.
Context: pristine framework
Measurement source: SI pp.28, 34/44 · 4-probe DC conductivity measurements · Fig. S15; Table S4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Four-probe conductivity at 100 K	1.351 x 10^-5 S/cm	—	—	SI Table Exact Reported	SI p.34/44 · Hall Effect measurements · Table S4
Four-probe conductivity at 125 K	5.236 x 10^-5 S/cm	—	—	SI Table Exact Reported	SI p.34/44 · Hall Effect measurements · Table S4
Four-probe conductivity at 150 K	3.023 x 10^-4 S/cm	—	—	SI Table Exact Reported	SI p.34/44 · Hall Effect measurements · Table S4
Four-probe conductivity at 200 K	1.200 x 10^-3 S/cm	—	—	SI Table Exact Reported	SI p.34/44 · Hall Effect measurements · Table S4
Four-probe conductivity at 250 K	8.500 x 10^-3 S/cm	—	—	SI Table Exact Reported	SI p.34/44 · Hall Effect measurements · Table S4
Four-probe conductivity at 300 KMarked as a best value within this paper	3.400 x 10^-2 S/cm	—	—	SI Table Exact Reported	SI p.34/44 · Hall Effect measurements · Table S4

Laser-ablated Hall-bar Fe3(THT)2(NH4)3 device · Thin Film

Current sourced from contact 1 to 5; Hall voltage measured across contacts 2-8, 3-7, 4-6; magnetic field 0 to +/-0.8 T; 300 K to 100 K.

Temperature: 100-300
Atmosphere: vacuum below 6e-8 mbar
Geometry: Laser-ablated Hall bar with Cr/Au contacts.
Context: pristine framework
Measurement source: SI pp.31-34/44 · Hall Effect measurements · Figs. S18-S19; Table S4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Bandgap estimated from thermally activated carrier density	Eg = 201 +/- 20 meV	0.201 eV	+/- 20 meV	Text Exact Reported	main p.5, article p.1031 · Hall effect discussion · Fig. 3d
Hall charge density at 300 K (+B)Marked as a best value within this paper	9.24 +/- 1.35 x 10^14 cm-3	—	+/- 1.35 x 10^14 cm-3	SI Table Exact Reported	SI p.34/44 · Hall Effect measurements · Table S4
Room-temperature Hall mobilityMarked as a best value within this paper	mu_Hall = 229 +/- 33 cm2 V-1 s-1	—	+/- 33 cm2 V-1 s-1	Text Exact Reported	main p.5, article p.1031 · Hall effect discussion · Fig. 3d; Table S4
Hall mobility at 100 K (+B)	581 +/- 119 cm2/Vs	—	+/- 119 cm2 V-1 s-1	SI Table Exact Reported	SI p.34/44 · Hall Effect measurements · Table S4
Hall mobility at 200 K (+B)	1067 +/- 71 cm2/Vs	—	+/- 71 cm2 V-1 s-1	SI Table Exact Reported	SI p.34/44 · Hall Effect measurements · Table S4
Hall mobility at 250 K (+B)	402 +/- 46 cm2/Vs	—	+/- 46 cm2 V-1 s-1	SI Table Exact Reported	SI p.34/44 · Hall Effect measurements · Table S4

Room-temperature TRTS Fe3(THT)2(NH4)3 film sample · Thin Film

800 nm pump at 80 uJ cm-2; about 1 THz probe bandwidth; complex conductivity at 0.3 ps after photoexcitation; nitrogen environment.

Temperature: about 300
Atmosphere: nitrogen
Geometry: Contact-free film photoconductivity.
Context: pristine framework
Measurement source: main p.3, article p.1029 · Photoconductivity of Fe3(THT)2(NH4)3 2D MOF by TRTS · Fig. 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
THz mobility, Fig. 2 sample	mu = 125 +/- 9 cm2 V-1 s-1	—	+/- 9 cm2 V-1 s-1	Text Exact Reported	main p.3, article p.1029 · Photoconductivity of Fe3(THT)2(NH4)3 2D MOF by TRTS · Fig. 2b
TRTS plasma frequency, Fig. 2 sample	omega_p = 3.2 +/- 0.2 THz	—	+/- 0.2 THz	Text Exact Reported	main p.3, article p.1029 · Photoconductivity of Fe3(THT)2(NH4)3 2D MOF by TRTS · Fig. 2b
TRTS scattering time, Fig. 2 sample	tau_s = 62 +/- 6 fs	—	+/- 6 fs	Text Exact Reported	main p.3, article p.1029 · Photoconductivity of Fe3(THT)2(NH4)3 2D MOF by TRTS · Fig. 2b

High-mobility variable-temperature TRTS film · Thin Film

Complex photoconductivity measured at 0.3 ps after photoexcitation under vacuum from 300 K to 100 K.

Temperature: 100-300
Atmosphere: vacuum
Geometry: Contact-free film photoconductivity.
Context: pristine framework
Measurement source: main p.4, article p.1030 · Photoconductivity of Fe3(THT)2(NH4)3 2D MOF by TRTS · Fig. 3a-c

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Absorbed photon density in 1.7 um sample	Nhv = 1.7 x 10^18 photons/cm3	—	—	Calculated From Reported Rounded Reported	SI p.26/44 · Calculation of charge carrier density, quantum yield and mean free path · Fig. S14
Maximum room-temperature mobility stated in abstract/outlookMarked as a best value within this paper	up to ~220 cm2 V-1 s-1	—	—	Text Approximate	main p.1, article p.1027 · Abstract
Carrier density from plasma frequency	2.8 x 10^16 cm-3	—	—	Calculated From Reported Rounded Reported	SI p.27/44 · Calculation of charge carrier density, quantum yield and mean free path
Mean free path	~1.5 nm	—	—	Calculated From Reported Approximate	SI p.27/44 · Calculation of charge carrier density, quantum yield and mean free path
Free-carrier photogeneration quantum yield	about 1.5%	0.015 fraction	—	Calculated From Reported Approximate	SI p.27/44 · Calculation of charge carrier density, quantum yield and mean free path
Room-temperature THz mobility, high-mobility sampleMarked as a best value within this paper	mu = 211 +/- 7 cm2 V-1 s-1	—	+/- 7 cm2 V-1 s-1	Text Exact Reported	main p.3, article p.1029 · Photoconductivity of Fe3(THT)2(NH4)3 2D MOF by TRTS · Fig. 3b
TRTS scattering time, high-mobility sampleMarked as a best value within this paper	tau_s = 104 +/- 5 fs	—	+/- 5 fs	Text Exact Reported	main p.3, article p.1029 · Photoconductivity of Fe3(THT)2(NH4)3 2D MOF by TRTS · Fig. 3b

70 nm two-probe Fe3(THT)2(NH4)3 film device · Thin Film

Au top contacts on SiO2/Si; room-temperature thickness series 20 nm to 1.7 um under vacuum; low-temperature measurements from 4.2 K while warming.

Temperature: 4.2-320
Atmosphere: vacuum
Geometry: Two-probe top-contact device; channel length 100 um and width 4.5 mm.
Context: pristine framework
Measurement source: SI pp.38-41/44 · DC conductivity of the Fe3(THT)2(NH4)3 2D MOF film from 2-probe method · Figs. S22-S24

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Low-temperature non-ohmic threshold	non-ohmic for temperatures <100 K	—	—	Caption Qualitative	SI p.30/44 · 4-probe DC conductivity measurements · Fig. S17
Room-temperature two-probe I-V behaviour	Ohmic response between -0.5 and +0.5 V	—	—	Caption Qualitative	SI p.40/44 · DC conductivity of the Fe3(THT)2(NH4)3 2D MOF film from 2-probe method · Fig. S23