VASP plane-wave DFT; PBE functional with D2 dispersion; PAW; DFT+U using Dudarev approach
DFT inclined AA-stacked Fe3(THT)2(NH4)3 multilayer model · Model
U = 4 eV and J = 1 eV; geometry cutoff 500 eV; electronic cutoff 800 eV; spin polarisation; Gamma-centred 2x2x15 k-mesh for 3D structures.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| DFT direct bandgap, eclipsed AA-stacked multilayer | ~0.65 eV | — | — | Caption Approximate | SI p.21/44 · Electronic structure · Fig. S12 |
| DFT direct bandgap, inclined AA-stacked multilayerMarked as a best value within this paper | ~0.35 eV | — | — | Caption Approximate | SI p.18/44 · Electronic structure · Fig. S9 |
| DFT direct bandgap, monolayer | ~0.3 eV | — | — | Caption Approximate | SI p.20/44 · Electronic structure · Fig. S11 |
| Relative energy of AB stacking | 0.37 eV higher than inclined AA | — | — | Text Exact Reported | SI p.7/44 · Structural characterization · Fig. S3 |
| Relative energy of eclipsed AA stacking | 0.10 eV higher than inclined AA | — | — | Text Exact Reported | SI p.7/44 · Structural characterization · Fig. S3 |
| Average carrier effective mass used for mobilityMarked as a best value within this paper | mavg* = 0.88 m0 | — | — | Text Exact Reported | main p.3, article p.1029 · Photoconductivity by TRTS · Supplementary Table S3 |
| Electron effective mass, inclined AA stackingMarked as a best value within this paper | me*/m0 = 0.98 | — | — | SI Table Exact Reported | SI p.22/44 · Table S3 · Table S3 |
| Hole effective mass, inclined AA stackingMarked as a best value within this paper | mh*/m0 = 0.78 | — | — | SI Table Exact Reported | SI p.22/44 · Table S3 · Table S3 |