Computational Modelling — Tuning the Structure-Property Relationships of Metallophthalocyanine-Based Two-Dimensional Conductive Metal-Organic Frameworks with Different Metal Linkages

Measurement evidence

Computational Modelling

Tuning the Structure-Property Relationships of Metallophthalocyanine-Based Two-Dimensional Conductive Metal-Organic Frameworks with Different Metal Linkages · Noh H.-J., Cline E., Pennington D.L. et al. · Journal of the American Chemical Society · 2025 · 8240-8249

4 measurement groups · 7 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

HSEsol band structure/DOS along out-of-plane stacking direction

CuPc-O-Cu DFT model system · Model

Modelled periodic framework electronic band structure; Figure 5d compares all materials in out-of-plane stacking direction.

Context
pristine
Measurement source
main p.18 · Figure · Figure 5d
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
HSEsol out-of-plane electronic gap annotation1.41 eVFigure Axis
Approximate
main p.18 · Figure · Figure 5d

DFT/PBEsol geometry optimisation and HSEsol band structure in VASP 5.4.4

CuPc-O-Cu DFT model system · Model

520 eV cutoff; PBEsol geometry optimisation; 2 x 2 x 4 gamma-centred k-mesh; DFT+U for Ni/Cu; Grimme D3; HSEsol band structures along Gamma-Z.

Context
pristine
Measurement source
SI p.47 · Section S16 DFT · Figure 5
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
CuPc-O-Cu out-of-plane electronic gap, compressed interlayer spacingcompressed by 0.15 A: 0.86 eVFigure Axis
Approximate
main p.18 · Figure · Figure 5c
CuPc-O-Cu out-of-plane electronic gap, equilibrium interlayer spacingequilibrium: 1.41 eVFigure Axis
Approximate
main p.18 · Figure · Figure 5c
CuPc-O-Cu out-of-plane electronic gap, expanded interlayer spacingexpanded by 0.15 A: 1.52 eVFigure Axis
Approximate
main p.18 · Figure · Figure 5c
computed dominant charge-transport pathwaydispersive metallic bands in the through-space pi-stacking direction; flat bands in in-plane directionText
Qualitative
main p.8 · Results and Discussion · Figure 5

HSEsol band structure/DOS along out-of-plane stacking direction

CuPc-O-Ni DFT model system · Model

Modelled periodic framework electronic band structure; Figure 5d compares all materials in out-of-plane stacking direction.

Context
pristine
Measurement source
main p.18 · Figure · Figure 5d
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
HSEsol out-of-plane electronic gap annotation1.41 eVFigure Axis
Approximate
main p.18 · Figure · Figure 5d

HSEsol band structure/DOS along out-of-plane stacking direction

CuPc-O-Zn DFT model system · Model

Modelled periodic framework electronic band structure; Figure 5d compares all materials in out-of-plane stacking direction.

Context
pristine
Measurement source
main p.18 · Figure · Figure 5d
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
HSEsol out-of-plane electronic gap annotation1.54 eVFigure Axis
Approximate
main p.18 · Figure · Figure 5d