DFT (VASP/PBE) and deformation-potential/Boltzmann transport calculations
DFT model of Cu3(HHTP)2 · Model
VASP, PBE functional, 400 eV cutoff, 5 x 5 x 1 k-point mesh; carrier mobility from deformation potential theory; Boltzmann transport electronic conductivity; electrostatic-potential and molecular polarity index calculations.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| carrier mobility, x direction | 1569.37 cm2 V-1 s-1 | 1569.37 cm2 V-1 s-1 | — | Figure Axis Rounded Reported | 5 · Section 2.2 · Figure 3b |
| carrier mobility, z direction | 479.6 cm2 V-1 s-1 | 479.6 cm2 V-1 s-1 | — | Figure Axis Rounded Reported | 4-5 · Section 2.2 · Figure 3b |
| DFT-calculated in-plane electron gap | 0.62 eV | — | — | Text Rounded Reported | 4 · Section 2.2 · Figure S16 |
| hyperpolarizability-density integrated sum value | 30221.65944277 | — | — | SI Table Exact Reported | 38 · Supplementary Tables · Table S3 |
| molecular polarity index | 10.07 | — | — | Text Rounded Reported | 6 · Section 2.3 · Figure 4b |