Sensing Application — Large-Area Synthesis of Ultrathin, Flexible, and Transparent Conductive Metal–Organic Framework Thin Films via a Microfluidic-Based Solution Shearing Process

Measurement evidence

Sensing Application

Large-Area Synthesis of Ultrathin, Flexible, and Transparent Conductive Metal–Organic Framework Thin Films via a Microfluidic-Based Solution Shearing Process · Lee T., Kim J.-O., Park C. et al. · Advanced Materials · 2022 · 2107696

6 measurement groups · 13 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Dynamic chemiresistive H2S sensing

Bulk Ni3(HITP)2 powder drop-cast sensor control · Powder

5 ppm H2S, room temperature, nitrogen atmosphere; drop-cast bulk-powder control.

Temperature
room temperature
Atmosphere
N2
Geometry
drop-cast powder on sensor substrate
Context
bulk pristine Ni3(HITP)2 powder control
Measurement source
5 · 2.3 Sensing Characterizations · Figure 4a
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Bulk Ni3(HITP)2 crystallite size rangeabout 100-300 nmText
Range
6 · 2.3 Sensing Characterizations · Figure S23
Bulk Ni3(HITP)2 response to 5 ppm H2SdR/R0 = 69%Text
Exact Reported
5 · 2.3 Sensing Characterizations · Figure 4a

Dynamic chemiresistive H2S sensing

Ni3(HITP)2 thin-film chemiresistive sensor on alumina · Electrode

5 ppm H2S, room temperature, nitrogen atmosphere; resistance response [(dR/R0) x 100].

Temperature
room temperature
Atmosphere
N2
Geometry
alumina substrate with interdigitated gold electrode; 150 um gap
Context
pristine thin-film target compared with bulk Ni3(HITP)2 powder control
Measurement source
5 · 2.3 Sensing Characterizations · Figure 4a
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Thin-film response enhancement over bulk30.2 times greaterText
Exact Reported
5 · 2.3 Sensing Characterizations · Figure 4a
Thin-film Ni3(HITP)2 response to 5 ppm H2SMarked as a best value within this paperdR/R0 = 2085%Text
Exact Reported
5 · 2.3 Sensing Characterizations · Figure 4a

H2S concentration-response calibration and LOD calculation

Ni3(HITP)2 thin-film chemiresistive sensor on alumina · Electrode

H2S concentrations 0.1-10 ppm; slope from linear response fit; noise from 60 min baseline under nitrogen after 3 h stabilisation.

Temperature
room temperature
Atmosphere
N2
Geometry
chemiresistive interdigitated electrode device
Context
pristine Ni3(HITP)2 thin-film sensor
Measurement source
7 · 2.3 Sensing Characterizations · Figure 4e; Table S4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
H2S calibration R2R2 = 0.98Text
Exact Reported
7 · 2.3 Sensing Characterizations · Figure 4e
Experimental H2S detection limitExperimental: < 0.1 ppm<SI Table
Approximate
14 · Table S4 · Table S4
Calculated H2S limit of detectionMarked as a best value within this paper3 ppb / 0.003 ppm3 ppbText
Exact Reported
7 · 2.3 Sensing Characterizations · Table S4
H2S sensitivity from main textMarked as a best value within this paperSlope = 362 % ppm-1R2 = 0.98Text
Exact Reported
7 · 2.3 Sensing Characterizations · Figure 4e
Average baseline noise0.327%Text
Exact Reported
9 · Chemiresistive gas sensing measurement · Figure S30

Cyclic dosimetric H2S sensing

Ni3(HITP)2 thin-film chemiresistive sensor on alumina · Electrode

10 cycles; each cycle 30 min exposure to 1 ppm H2S and 30 min recovery.

Temperature
room temperature
Atmosphere
N2
Geometry
chemiresistive interdigitated electrode device
Context
pristine Ni3(HITP)2 thin-film sensor
Measurement source
7 · 2.3 Sensing Characterizations · Figure 4g; Figure S28
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Dosimetric cyclic H2S response10 cycles, 30 min exposure to 1 ppm H2S and 30 min recovery per cycle; repeated response increase reflects cumulative doseCaption
Qualitative
6 · Figure 4 caption · Figure 4g

Selectivity test against interfering gases

Ni3(HITP)2 thin-film chemiresistive sensor on alumina · Electrode

5 ppm H2S and 5 ppm interfering gases NO, HCHO, CO, CH4, C2H6, H2, and C2H2.

Temperature
room temperature
Atmosphere
N2
Geometry
chemiresistive interdigitated electrode device
Context
pristine Ni3(HITP)2 thin-film sensor
Measurement source
7 · 2.3 Sensing Characterizations · Figure 4f
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
H2S selectivity over interfering gasesresponse two orders of magnitude greater for H2S than NO, HCHO, CO, CH4, C2H6, H2, and C2H2Text
Qualitative
7 · 2.3 Sensing Characterizations · Figure 4f

Humid-air H2S sensing

Flexible Ni3(HITP)2 thin-film sensor · Electrode

5 ppm H2S under relative humidity 80%, comparing thin film and bulk.

Temperature
room temperature
Atmosphere
humid air, RH 80%
Geometry
flexible Ni3(HITP)2 sensor
Context
pristine thin-film target compared with bulk Ni3(HITP)2 control
Measurement source
7 · 2.3 Sensing Characterizations · Figure 5e
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Bulk response to 5 ppm H2S at RH 80%dR/R0 = 26%Text
Exact Reported
7 · 2.3 Sensing Characterizations · Figure 5e
Thin-film response to 5 ppm H2S at RH 80%dR/R0 = 197%Text
Exact Reported
7 · 2.3 Sensing Characterizations · Figure 5e