Electrical Transport — Large-Area Synthesis of Ultrathin, Flexible, and Transparent Conductive Metal–Organic Framework Thin Films via a Microfluidic-Based Solution Shearing Process

5 measurement groups · 13 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

MASS-PRC Ni3(HITP)2 thin film · Thin Film

Large-area film measured at various locations; reported for film thickness about 64 nm.

Geometry: patterned electrodes on 50 x 70 mm area wafer
Context: pristine Ni3(HITP)2 thin film
Measurement source: 4 · 2.2 Characterizations of Ni3(HITP)2 Thin Film · Figure 3b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Conductivity uniformity area	3500 mm2 / 50 x 70 mm	—	—	Text Exact Reported	1 · Abstract
Mean electrical conductivityMarked as a best value within this paper	37.1 S cm-1	—	standard deviation 1.38 S cm-1	Text Exact Reported	4 · 2.2 Characterizations of Ni3(HITP)2 Thin Film · Figure 3b
Electrical conductivity standard deviation	1.38	—	—	Text Exact Reported	4 · 2.2 Characterizations of Ni3(HITP)2 Thin Film · Figure 3b

Flexible Ni3(HITP)2 thin-film sensor · Electrode

Flexible PI/PET sensor; resistance measured under bending cycles, SEM before/after 300 cycles, and H2S response at 75 deg bending angle.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
SEM bending-cycle count	300 bending cycles without cracks/little difference	—	—	Text Exact Reported	7 · 2.3 Sensing Characterizations · Figure 5b,c
Resistance change under bending cycling	dR/R0 = 1.14%	—	—	Text Exact Reported	7 · 2.3 Sensing Characterizations · Figure 5a
Bent-state H2S response retention	87% of response retained at bending angle 75 deg	—	—	Text Exact Reported	7 · 2.3 Sensing Characterizations · Figure 5f

MASS-PRC Ni3(HITP)2 thin film · Thin Film

Sheet resistance and 550 nm transmittance measured on Ni3(HITP)2 films; transmittance measured on quartz substrates.

Geometry: thin-film sheet resistance
Context: pristine Ni3(HITP)2 thin film
Measurement source: 5 · 2.2 Characterizations of Ni3(HITP)2 Thin Film · Figure 3d,e

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Sheet resistance range versus shearing speed	approximately 4-70 kOhm/sq from Figure 3d	—	—	Visual Estimate Approximate	5 · 2.2 Characterizations of Ni3(HITP)2 Thin Film · Figure 3d
Maximum transmittance at 550 nmMarked as a best value within this paper	88.8%	—	—	Text Exact Reported	5 · 2.2 Characterizations of Ni3(HITP)2 Thin Film · Figure 3e
Minimum transmittance at 550 nm across shearing speeds	72.2%	—	—	Text Exact Reported	5 · 2.2 Characterizations of Ni3(HITP)2 Thin Film · Figure 3e

MASS-PRC Ni3(HITP)2 thin film · Thin Film

Resistance measured from 30 to 100 deg C.

Temperature: 303-373
Geometry: thin-film resistance
Context: pristine Ni3(HITP)2 thin film
Measurement source: 4 · 2.2 Characterizations of Ni3(HITP)2 Thin Film · Figure S15

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Resistance at 100 deg C	approximately 1.18 kOhm from Figure S15	—	—	Visual Estimate Approximate	29 · Figure S15 caption · Figure S15
Resistance at 30 deg C	approximately 1.44 kOhm from Figure S15	—	—	Visual Estimate Approximate	29 · Figure S15 caption · Figure S15

MASS-PRC Ni3(HITP)2 thin film · Thin Film

Thin film immersed in water for 30 min and resistance checked by multimeter.

Atmosphere: water immersion
Context: pristine Ni3(HITP)2 thin film
Measurement source: 4 · 2.2 Characterizations of Ni3(HITP)2 Thin Film · Figure S16

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Resistance after water soaking	4.908 kOhm from multimeter photograph	—	—	Visual Estimate Approximate	30 · Figure S16 caption · Figure S16c
Resistance before water soaking	4.997 kOhm from multimeter photograph	—	—	Visual Estimate Approximate	30 · Figure S16 caption · Figure S16a