Primary studyCore evidenceThin Film Device

2D Semiconducting Metal–Organic Framework Thin Films for Organic Spin Valves

Song X., Wang X., Li Y. et al. · Angewandte Chemie - International Edition · 2020 · 1118-1123

2materials
11samples
4synthesis routes
13measurements
50results
7claims and caveats

Evidence map

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Author interpretations and caveats

Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.

Application RelevanceSupport assessment: High

Cu3(HHTP)2 acts as an organic spacer in LSMO/Cu3(HHTP)2/Co/Au spin valves, giving inverse MR up to about -25% at 10 K and retaining about -3% at 200 K.

Caveat: The exact spin-polarised transport physics is stated to remain elusive; Co penetration and roughness influence the active barrier.

1122 · Summary · Figure 4; Figure S16-S17 · Linked to 4 structured results

CaveatSupport assessment: High

Co penetration into the MOF active layer is observed, especially for thinner MOF spacers, and is proposed to affect resistivity and MR behaviour.

Caveat: Quantitative Co concentration profiles were shown graphically but not digitised here.

S14 · Section 7 · Figures S12-S13 · Linked to 4 structured results

Phase AssignmentSupport assessment: High

Cu3(HHTP)2 films on LSMO are highly crystalline and phase-pure, with Cu-HHTP 2D honeycomb layers stacked perpendicular to the substrate in slipped-parallel AB mode.

Caveat: Film peaks are slightly broadened and the SI notes partially disordered stacking layers from perpendicular domain-size analysis.

1119-1120 · Results and Discussion · Figure 2; Figures S6-S7 · Linked to 5 structured results

Structure Property LinkSupport assessment: Medium

The Cu3(HHTP)2 HOMO/LUMO levels align reasonably with LSMO and Co work functions, which is proposed to facilitate charge-carrier injection and extraction.

Caveat: LSMO and Co work functions are literature values, not first-hand measurements in this paper.

1121 · Results and Discussion · Figure S20; Figure S21 · Linked to 5 structured results

Structure Property LinkSupport assessment: Medium

Mixed Cu valency and pi-d conjugation are proposed to facilitate charge delocalisation and intralayer charge transport in Cu3(HHTP)2.

Caveat: The electronic-structure relationship is mechanistic interpretation rather than a directly isolated variable.

1121 · Results and Discussion · Figure S9 · Linked to 3 structured results

Structure Property LinkSupport assessment: High

The pristine 100 nm Cu3(HHTP)2 thin film behaves as a semiconductor with 0.29 S cm-1 conductivity at 300 K and thermally activated transport at higher temperatures.

Caveat: Conductivity value is reported as estimated; lower-temperature behaviour is assigned to Mott-VRH over 125-200 K.

1120 · Results and Discussion · Figure 3 · Linked to 3 structured results

Transport MechanismSupport assessment: Medium

The OSV temperature-dependent resistivity, negative MR, parabolic differential conductance and interface evidence are interpreted as multi-step tunnelling dominated spin-dependent transport.

Caveat: Authors explicitly state that exact spin-polarised transport physics remains elusive; Co penetration complicates the simple barrier picture.

1121 · Results and Discussion · Figures S12-S13; S22-S23 · Linked to 3 structured results

Material identities

Names and aliases are kept exactly within the paper’s own identity model.

MaterialCompositionStructure contextSource
Cu3(HHTP)2 2D conductive MOFBrowse family: Cu₃(HHTP)₂ / Cu–HHTPCu3(HHTP)2; HHTP = 2,3,6,7,10,11-hexahydroxytriphenyleneCu ions in square-planar coordination; XPS indicates mixed Cu(II)/Cu(I) centres. · Hexadentate HHTP ligands, reported as semiquinonate/catecholate redox states.2D · Pristine2D honeycomb layers with slipped-parallel AB stacking; face-on oriented films on LSMO/STO by GIXRD and simulated PXRD comparison.1119 · Results and Discussion · Figure 1; Figure 2
Cu3(HHTP)2 structural modelBrowse family: Cu₃(HHTP)₂ / Cu–HHTPDFTB+/Material Studio model of Cu3(HHTP)2Modelled Cu nodes in the Cu3(HHTP)2 framework. · Modelled HHTP ligands.2D · Model SystemRelaxed slipped-parallel AB packing model with space group P1.S8 · Section 3. Structure Simulation and Calculation of Crystalline Domain Size · Figure S6; Figure S7; Table S1

Sample register

Sample form, processing state and composition status define the context for measurements.

Show 11 sample records
SampleForm and roleProcessing and geometrySource
100 nm Cu3(HHTP)2 thin film on glassresearch_0129__mat__mat_cu3hhtp2Thin Film · Pristine Control · Pristine FrameworkLayer-by-layer grown film with Au electrodes deposited by thermal evaporation through a shadow mask.glass substrate with four parallel Au electrodes · 100 nm; obtained from 20 growth cycles.S12 · Section 6. Electrical Measurements of Cu3(HHTP)2 Film · Figure S11
100 nm Cu3(HHTP)2 thin film on ITO glassresearch_0129__mat__mat_cu3hhtp2Thin Film · Pristine Control · Pristine FrameworkLayer-by-layer grown film with point electrodes deposited by thermal evaporation through a mask.ITO glass electrodes · 100 nm; obtained from 20 growth cycles.S12 · Section 6. Electrical Measurements of Cu3(HHTP)2 Film · Figure S10; Table S2
100 nm Cu3(HHTP)2 thin film on LSMO/STOresearch_0129__mat__mat_cu3hhtp2Thin Film · Pristine Control · Pristine FrameworkIn situ layer-by-layer growth on LSMO/STO after LSMO surface cleaning and 3-APTMS self-assembled monolayer modification.3-APTMS-modified LSMO electrode on (001) STO · 100 nm; 20 growth cycles implied by 5 nm per cycle.1119 · Results and Discussion · Figure 2a
Cu3(HHTP)2 thin film on quartz glassresearch_0129__mat__mat_cu3hhtp2Thin Film · Pristine Control · Pristine FrameworkLayer-by-layer grown by alternating Cu(OAc)2 and HHTP ethanol solutions after substrate cleaning/functionalisation.functionalised quartz glass · Controlled by growth cycles; about 5 nm per cycle.1119 · Results and Discussion · Figure 2b
Slipped-parallel AB Cu3(HHTP)2 modelresearch_0129__mat__mat_cu3hhtp2_modelModel · Model System · ModelRelaxed in Accelrys Material Studio 7.0 / Reflex module and DFTB+ coordinates reported.S8 · Section 3. Structure Simulation and Calculation of Crystalline Domain Size · Table S1
Cu3(HHTP)2 powderresearch_0129__mat__mat_cu3hhtp2Powder · Pristine Control · Pristine FrameworkSolvothermal powder, centrifuged, washed with water and acetone, then vacuum dried.S4 · Synthesis of Cu3(HHTP)2 Powder
Cu3(HHTP)2/Co/Au interfacial multilayers on Siresearch_0129__mat__mat_cu3hhtp2Thin Film · Target Sample · CompositeAu/Co/MOF multilayers grown on Si and peeled from Si with carbon tape for XPS.Si substrate before peel-off with carbon tape · MOF 30 nm or 70 nm; Co/Au layers not fully quantified in the SI passage.S14 · Section 7. Interfacial Structure · Figure S13
LSMO/Cu3(HHTP)2(100 nm)/Co/Au organic spin valveresearch_0129__mat__mat_cu3hhtp2Electrode · Target Sample · CompositeVertical OSV device with a 100 nm Cu3(HHTP)2 spacer selected for systematic MR investigations.LSMO bottom electrode on STO · Cu3(HHTP)2 spacer 100 nm; LSMO 50 nm, Co 50 nm, Au 50 nm.1121 · Results and Discussion · Figure 4b
LSMO/Cu3(HHTP)2(30 nm)/Co/Au organic spin valveresearch_0129__mat__mat_cu3hhtp2Electrode · Target Sample · CompositeVertical OSV device with Cu3(HHTP)2 spacer, thermally evaporated Co top electrode and Au cap.LSMO bottom electrode on STO · Cu3(HHTP)2 spacer 30 nm; LSMO 50 nm, Co 50 nm, Au about 50 nm.S4 · Fabrication of the Cu3(HHTP)2 2D c-MOF-Based Spin Valves · Figure S17
LSMO/Cu3(HHTP)2(50 nm)/Co/Au organic spin valveresearch_0129__mat__mat_cu3hhtp2Electrode · Target Sample · CompositeVertical OSV device with Cu3(HHTP)2 spacer, thermally evaporated Co top electrode and Au cap.LSMO bottom electrode on STO · Cu3(HHTP)2 spacer 50 nm; LSMO 50 nm, Co 50 nm, Au about 50 nm.S16 · Section 9. Thickness and Temperature Dependent Magnetoresistance · Figure S17
LSMO/Cu3(HHTP)2(70 nm)/Co/Au organic spin valveresearch_0129__mat__mat_cu3hhtp2Electrode · Target Sample · CompositeVertical OSV device with Cu3(HHTP)2 spacer, thermally evaporated Co top electrode and Au cap.LSMO bottom electrode on STO · Cu3(HHTP)2 spacer 70 nm; LSMO 50 nm, Co 50 nm, Au about 50 nm.S16 · Section 9. Thickness and Temperature Dependent Magnetoresistance · Figure S17