Electrical Transport — 2D Semiconducting Metal–Organic Framework Thin Films for Organic Spin Valves

4 measurement groups · 19 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

100 nm Cu3(HHTP)2 thin film on glass · Thin Film

100 nm Cu3(HHTP)2 film on glass with four parallel Au electrodes; temperature-dependent measurement in vacuum.

Temperature: 80-300
Atmosphere: vacuum, P approximately 10^-5 mbar for temperature-dependent I-V
Geometry: horizontal four-probe device
Context: pristine MOF film in-plane transport
Measurement source: S12 · Section 6 · Figure S11

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Arrhenius activation energy	0.13 eV	—	—	Text Exact Reported	S12 · Section 6 · Figure 3d; Figure S11
in-plane conductivity at 300 KMarked as a best value within this paper	0.29 S cm-1 in vacuum	—	—	Text Exact Reported	S12 · Section 6 · Figure S11
Mott-VRH fitting temperature range	125 to 200 K	—	—	Text Range	1120 · Results and Discussion · Figure 3d inset
temperature-dependent conductivity trend	conductivity increases non-linearly from 80 to 300 K	—	—	Qualitative Qualitative	1120 · Results and Discussion · Figure 3c

100 nm Cu3(HHTP)2 thin film on ITO glass · Thin Film

100 nm Cu3(HHTP)2 film on ITO; point electrodes deposited by thermal evaporation through shadow mask.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
maximum point resistance	3.52 MOhm	3520000 Ohm	—	SI Table Exact Reported	S12 · Section 6 · Table S2
minimum point resistance	0.56 MOhm	560000 Ohm	—	SI Table Exact Reported	S12 · Section 6 · Table S2

LSMO/Cu3(HHTP)2(100 nm)/Co/Au organic spin valve · Electrode

Current 0.1 uA; magnetic field applied parallel to the plane of the FM electrodes; 100 nm MOF spacer.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
magnetoresistance at 100 K	\|MR\| = 16% from Figure S16 label	—	—	Figure Axis Approximate	S16 · Section 9 · Figure S16d
magnetoresistance at 10 KMarked as a best value within this paper	negative MR around 25%	—	—	Text Approximate	1120 · Results and Discussion · Figure 4d
magnetoresistance at 150 K	\|MR\| = 9% from Figure S16 label	—	—	Figure Axis Approximate	S16 · Section 9 · Figure S16e
magnetoresistance at 200 K	3% at 200 K	—	—	Text Exact Reported	1120 · Results and Discussion · Figure 4e; Figure S16
magnetoresistance at 20 K	\|MR\| = 23% from Figure S16 label	—	—	Figure Axis Approximate	S16 · Section 9 · Figure S16b
magnetoresistance at 50 K	\|MR\| = 23% from Figure S16 label	—	—	Figure Axis Approximate	S16 · Section 9 · Figure S16c
magnetoresistance at 5 K	\|MR\| = 24% from Figure S16 label	—	—	Figure Axis Approximate	S16 · Section 9 · Figure S16a
magnetoresistance at 250 K	vanished at 250 K	—	—	Text Qualitative	1120 · Results and Discussion · Figure 4e
MR repeatability range across 100 nm devices	MR values varied from 6% to 25%	—	—	Text Range	S16 · Section 9 · Figures S18-S19

LSMO/Cu3(HHTP)2(70 nm)/Co/Au organic spin valve · Electrode

MR measured at 10 K for OSVs with 30, 50, 70 and 100 nm Cu3(HHTP)2 spacers.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
magnetoresistance for 100 nm spacer at 10 KMarked as a best value within this paper	25%	—	—	Text Exact Reported	S16 · Section 9 · Figure S17d
magnetoresistance for 30 nm spacer at 10 K	\|MR\| = 5% from Figure S17 label	—	—	Figure Axis Approximate	S16-S17 · Section 9 · Figure S17a
magnetoresistance for 50 nm spacer at 10 K	\|MR\| = 13% from Figure S17 label	—	—	Figure Axis Approximate	S16-S17 · Section 9 · Figure S17b
magnetoresistance for 70 nm spacer at 10 KMarked as a best value within this paper	25%	—	—	Text Exact Reported	S16 · Section 9 · Figure S17c