Microscopy Morphology — Orientation Control of a Two-Dimensional Conductive Metal-Organic Framework Thin Film by a Pyridine Vapor-Assisted Dry Process

Measurement evidence

Microscopy Morphology

Orientation Control of a Two-Dimensional Conductive Metal-Organic Framework Thin Film by a Pyridine Vapor-Assisted Dry Process · Chon S., Nakayama R., Iwamoto S. et al. · ACS Applied Materials and Interfaces · 2023 · 56057-56063

3 measurement groups · 4 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

SEM

(001)-oriented Cu3(HHTP)2 thin film annealed with 3 uL pyridine · Thin Film

SI comparison of as-deposited and pyridine-vapour annealed film surfaces.

Geometry
thin film on alpha-Al2O3 (001)
Context
pristine framework
Measurement source
p002 · Figure caption · Figure S2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
annealed film flake-like morphologyannealed film shows flake-like morphology with enlarged particle size in the in-plane directionCaption
Qualitative
p002 · Figure caption · Figure S2

SEM-EDS (Hitachi High Technologies S-5500)

(001)-oriented Cu3(HHTP)2 thin film annealed with 3 uL pyridine · Thin Film

Surface morphology and Al/Cu/C elemental maps of pyridine-vapour annealed Cu3(HHTP)2 film.

Geometry
thin film on alpha-Al2O3 (001)
Context
pristine framework
Measurement source
p004 · Results and Discussion · Figure 3a-d
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
in-plane Cu and C elemental uniformityCu and C uniformly distributed over scanned area; good film coverageQualitative
Qualitative
p004 · Results and Discussion · Figure 3a-d

TOF-SIMS depth profiling (ION-TOF TOF-SIMS 5-100-AD)

(001)-oriented Cu3(HHTP)2 thin film annealed with 3 uL pyridine · Thin Film

Depth profile of C-, Cu-, Al- and Si-related signals through the annealed Cu3(HHTP)2 film and alpha-Al2O3 substrate.

Geometry
thin film on alpha-Al2O3 (001)
Context
pristine framework
Measurement source
p004 · Results and Discussion · Figure 3e
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
SIMS film/substrate interface sputtering timeapproximately 170 sText
Approximate
p004 · Results and Discussion · Figure 3e
Si absorber residue in filmSi signal negligible; Si not contained in the thin filmQualitative
Qualitative
p004 · Results and Discussion · Figure 3e