Complete recipeSource: Main
Route 1: Cvd
p002 · Experimental Section · Figure 1
Metal precursorsanhydrous copper(II) acetate, Cu(OAc)2
Linker precursorsHHTP
SolventsSubstrate cleaning: acetone and isopropyl alcohol. No solvent used during IR-PLD deposition.
AdditivesSi infrared absorber mixed into Cu(OAc)2 and HHTP pellets at 20 and 30 vol %, respectively
AtmosphereVacuum deposition; base pressure 2 x 10^-6 Pa
Temperature99.85
Substrate orientationalpha-Al2O3 (001)
Oxidant / reductantNo separate oxidant/reductant added; authors suggest partially oxidized HHTP and/or vaporized Cu(OAc)2/decomposition products may oxidize/deprotonate HHTP.
Work-upSubstrate sequentially ultrasonicated in acetone, isopropyl alcohol, acetone, and isopropyl alcohol before deposition; as-deposited film transferred through ambient air for annealing experiments.
Scalability contextThin-film physical vapour deposition route; typical growth rate 1.2 nm min^-1, substrate-target distance 5 cm.
Show 4 structured reagent records
| Role | Reagent | Amount / concentration | Source |
|---|---|---|---|
| Metal Source | Cu(OAc)2 purchased from Sigma-Aldrich | 8 nm per deposited layer; five cycles | p002 · Experimental Section · Figure 1 |
| Linker | HHTP purchased from TCI | 10 nm per deposited layer; five cycles | p002 · Experimental Section · Figure 1 |
| Additive | Si infrared absorber | 20 vol % in Cu(OAc)2 pellet; 30 vol % in HHTP pellet | p002 · Experimental Section · Figure 1 |
| Solvent | acetone and isopropyl alcohol for substrate cleaning | Not specified | p002 · Experimental Section · Figure 1 |