Chen X., Zhang K., Hassan Z.M. et al. · Journal of Physics Condensed Matter · 2022 · 404001
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
The current HKUST-1 SURMOF samples have contact resistances too high for reproducible quantitative Hall measurements, so better contacts and doping are needed for reliable carrier density and mobility extraction.
Caveat: The Hall sign was discussed qualitatively, but the paper explicitly says quantitative Hall measurements were not reproducible.
article page 9 · 1.2 Thin-film electrical conductometry · Linked to 2 structured results
TCNQ infiltration loads HKUST-1 pores without altering or deteriorating the HKUST-1 SURMOF host structure.
Caveat: Based on XRD and Raman signatures; no full guest stoichiometry is reported.
article page 4 · Figure 1 discussion · Figure 1 · Linked to 3 structured results
Preferentially (001)-oriented HKUST-1 SURMOF films exhibit strong anisotropy: lateral in-plane transport is not measurable even after TCNQ loading, whereas random polycrystalline films conduct laterally.
Caveat: Vertical conductivity is discussed by reference to prior studies; this article focuses on lateral measurements.
article page 7 · 1.2 Thin-film electrical conductometry · Figures 8 and 9 · Linked to 5 structured results
Hydroxyl-terminated SiO2/Si gives denser, more compact HKUST-1 films and higher conductivity/lower activation energy than loosely stacked borosilicate glass films.
Caveat: SiO2/Si conductivity values are extracted from plotted axes rather than text data; morphology comparison is qualitative.
article page 9 · 1.2 Thin-film electrical conductometry · Figures 4, 5, 10 and 11 · Linked to 4 structured results
TCNQ loading boosts lateral electrical conductivity in random polycrystalline HKUST-1 SURMOF films, producing measurable Ohmic I-V curves where pristine films are nearly insulating.
Caveat: Highest current values are read from plotted axes; exact I-V data table is not provided.
article page 7 · 1.2 Thin-film electrical conductometry · Figure 8 · Linked to 3 structured results
HKUST-1 SURMOF films in this study show p-type transport with holes as majority carriers.
Caveat: Seebeck sign is robust; quantitative Hall values were not reproducible because contact resistance was high.
article pages 5 and 9 · 1.1 and 1.2 Electrical measurements · Figure 6 · Linked to 3 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| HKUST-1 SURMOF thin filmBrowse family: HKUST-1 / Cu₃(BTC)₂ | HKUST-1, commonly Cu3(BTC)2; BTC = benzenetricarboxylateCu(II) paddlewheel dimers · benzene-tricarboxylate (BTC) | 3D · PristineCrystalline 3D porous HKUST-1 framework grown as surface-anchored MOF thin films; random polycrystalline or preferentially (001)-oriented depending on substrate/interface. | article page 2 · Introduction |
| TCNQ-loaded HKUST-1 SURMOF thin filmBrowse family: HKUST-1 / Cu₃(BTC)₂ | HKUST-1@TCNQCu(II) paddlewheel dimers · benzene-tricarboxylate (BTC); TCNQ guest in pores | 3D · CompositeHKUST-1 framework with tetracyanoquinodimethane guest molecules infiltrated into the pores; XRD and Raman indicate guest loading without framework deterioration. | article page 3 · Figure 1 and text · Figure 1 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| Random polycrystalline pristine HKUST-1 SURMOF film on borosilicate glass, ca. 130 nmresearch_0345__mat__mat_hkust1_surmof | Thin Film · Pristine Control · Pristine Framework | Random polycrystalline film with loosely stacked granular morphology.Insulating borosilicate glass without Au/SAM functionalization · 40 cycles, approximately 130 nm; 10-cycle samples approximately 40 nm also imaged | article pages 5 and 8 · Figures 4 and 8 · Figure 4; Figure 8(b) |
| Random polycrystalline TCNQ-loaded HKUST-1 SURMOF film on borosilicate glass, ca. 130 nmresearch_0345__mat__mat_hkust1_tcnq_surmof | Thin Film · Target Sample · Guest Loaded | Random polycrystalline HKUST-1 film on glass after TCNQ infiltration.Insulating borosilicate glass without Au/SAM functionalization · Approximately 130 nm for Figure 10 conductivity; 40-cycle sample | article page 8 · 1.2 Thin-film electrical conductometry · Figures 8 and 10 |
| Random polycrystalline pristine HKUST-1 SURMOF film on hydroxyl-terminated SiO2/Siresearch_0345__mat__mat_hkust1_surmof | Thin Film · Pristine Control · Pristine Framework | Compact dense random polycrystalline film with grains in direct contact.Hydroxyl-terminated native oxide covered Si substrate; thick 40 nm isolation SiO2 used for conductivity benchmark · Approximately 130 nm for 40 cycles, inferred from paired pristine/TCNQ morphology and conductivity discussion | article page 8 · 1.2 Thin-film electrical conductometry · Figure 5 |
| Random polycrystalline TCNQ-loaded HKUST-1 SURMOF film on hydroxyl-terminated SiO2/Siresearch_0345__mat__mat_hkust1_tcnq_surmof | Thin Film · Target Sample · Guest Loaded | Compact dense random polycrystalline HKUST-1 SURMOF after TCNQ infiltration.Hydroxyl-terminated SiO2/Si with bottom Au contacts; thick 40 nm isolation SiO2 for Figure 11 · Approximately 130 nm in summary; conductivity Figure 11 on 40 nm isolation SiO2 covered Si | article pages 8-9 · 1.2 Thin-film electrical conductometry · Figures 5 and 11 |
| Preferentially (001)-oriented pristine HKUST-1 SURMOF film, 100 nmresearch_0345__mat__mat_hkust1_surmof | Thin Film · Pristine Control · Pristine Framework | Quasi-LPE spray-grown preferentially oriented film on functionalized interface.SAM-functionalized Au on Si, or functionalized quartz, depending on measurement · 100 nm for Seebeck Figure 6(a); 40-100 nm thickness range for oriented silicon samples | article pages 4-6 · Electrical measurements · Figure 6(a) |
| Preferentially (001)-oriented TCNQ-loaded HKUST-1 SURMOF film, 100 nmresearch_0345__mat__mat_hkust1_tcnq_surmof | Thin Film · Target Sample · Guest Loaded | Preferentially oriented HKUST-1 SURMOF after TCNQ infiltration.SAM-functionalized Au on Si, or functionalized quartz, depending on measurement · 100 nm for Seebeck Figure 6(a) | article pages 5-7 · Electrical measurements · Figures 6(a), 9(b) |
| Random polycrystalline pristine HKUST-1 SURMOF film on thermally oxidized Si, 200 nmresearch_0345__mat__mat_hkust1_surmof | Thin Film · Pristine Control · Pristine Framework | Random oriented polycrystalline film grown without Au/SAM functionalization.Thermally oxidized Si with 484 nm isolation SiO2 · 200 nm for Figure 6(b) Seebeck samples | article pages 5-6 · 1.1 Seebeck coefficient · Figure 6(b) |
| Random polycrystalline TCNQ-loaded HKUST-1 SURMOF film on thermally oxidized Si, 200 nmresearch_0345__mat__mat_hkust1_tcnq_surmof | Thin Film · Target Sample · Guest Loaded | Random polycrystalline HKUST-1 SURMOF after TCNQ infiltration.Thermally oxidized Si with 484 nm isolation SiO2 · 200 nm for Figure 6(b) Seebeck samples | article page 5 · 1.1 Seebeck coefficient · Figure 6(b) |