Electrical Transport — Charge. transport, conductivity and Seebeck coefficient in pristine and TCNQ loaded preferentially grown metal-organic framework films

Measurement evidence

Electrical Transport

Charge. transport, conductivity and Seebeck coefficient in pristine and TCNQ loaded preferentially grown metal-organic framework films · Chen X., Zhang K., Hassan Z.M. et al. · Journal of Physics Condensed Matter · 2022 · 404001

7 measurement groups · 12 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Temperature-dependent electrical conductivity from Ecopia HMS-5300 Van der Pauw measurement

Random polycrystalline TCNQ-loaded HKUST-1 SURMOF film on borosilicate glass, ca. 130 nm · Thin Film

Conductivity of approximately 130 nm TCNQ-loaded random polycrystalline HKUST-1 film on insulating borosilicate glass over 260-350 K.

Temperature
260-350
Geometry
Van der Pauw bottom-contact thin-film geometry
Context
guest-loaded random polycrystalline film
Measurement source
article page 8 · 1.2 Thin-film electrical conductometry · Figure 10
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Activation energy for TCNQ-loaded borosilicate film0.13 eV over 300-350 K0.13 eVText
Rounded Reported
article page 9 · 1.2 Thin-film electrical conductometry · Figure 10(b)
TCNQ-loaded borosilicate film conductivity at 260 K7.129 x 10-4 S cm-1 at 260 K0.0007129 S cm^-1Text
Exact Reported
article page 8 · 1.2 Thin-film electrical conductometry · Figure 10(a)
TCNQ-loaded borosilicate film conductivity at 350 KMarked as a best value within this paper3.1 x 10-3 S cm-1 at 350 K0.0031 S cm^-1Text
Rounded Reported
article page 8 · 1.2 Thin-film electrical conductometry · Figure 10(a)

Temperature-dependent electrical conductivity and Arrhenius analysis

Random polycrystalline TCNQ-loaded HKUST-1 SURMOF film on hydroxyl-terminated SiO2/Si · Thin Film

TCNQ-loaded SURMOF film on 40 nm isolation SiO2 covered Si with bottom Au contacts.

Temperature
300-350
Geometry
Van der Pauw bottom-contact thin-film geometry
Context
guest-loaded compact SiO2/Si film
Measurement source
article pages 8-9 · 1.2 Thin-film electrical conductometry · Figure 11
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Activation energy for TCNQ-loaded SiO2/Si film0.043 eV0.043 eVFigure 11(b) label: +/-0.0006 eVText
Exact Reported
article page 9 · 1.2 Thin-film electrical conductometry · Figure 11(b)
TCNQ-loaded SiO2/Si film conductivity at 300 Kapproximately 0.023 S cm-1 at 300 K from Figure 11(a)0.023 S cm^-1visual estimate, about +/-0.003 S cm-1Figure Axis
Approximate
article page 8 · Figure 11 · Figure 11(a)
TCNQ-loaded SiO2/Si film conductivity at 350 KMarked as a best value within this paperapproximately 0.040 S cm-1 at 350 K from Figure 11(a)0.04 S cm^-1visual estimate, about +/-0.003 S cm-1Figure Axis
Approximate
article page 8 · Figure 11 · Figure 11(a)

Hall effect measurement attempts using Ecopia HMS-5300 and Quantum Design PPMS

Random polycrystalline TCNQ-loaded HKUST-1 SURMOF film on borosilicate glass, ca. 130 nm · Thin Film

Attempted Hall coefficient, Hall mobility and carrier density measurements from 260-350 K; 0.55 T permanent magnet and repeated 1-6 T PPMS fields.

Temperature
260-350
Geometry
Van der Pauw bottom Au contacts
Context
HKUST-1 SURMOF films including TCNQ-loaded conductive samples
Measurement source
article page 9 · 1.2 Thin-film electrical conductometry
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Contact resistance preventing reproducible Hall measurementsin excess of 1-2 MOhm1000000 Ohmrange lower boundText
Range
article page 9 · 1.2 Thin-film electrical conductometry
Carrier type from attempted Hall measurementspositive Hall coefficient; p-type, holesquantitative Hall measurements not reproducibleText
Qualitative
article page 9 · 1.2 Thin-film electrical conductometry

Lateral current-voltage measurement

Preferentially (001)-oriented pristine HKUST-1 SURMOF film, 100 nm · Thin Film

In-plane I-V from -10 V to 10 V on preferentially (001)-oriented pristine HKUST-1 film on functionalized quartz.

Geometry
lateral in-plane current path parallel to film surface
Context
pristine oriented control
Measurement source
article page 7 · 1.2 Thin-film electrical conductometry · Figure 9(a)
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Preferentially oriented pristine film lateral currentzero lateral in-plane current from -10 V to 10 V0 Anot measurable within Figure 9 current scaleText
Qualitative
article page 7 · 1.2 Thin-film electrical conductometry · Figure 9(a)

Lateral current-voltage measurement

Preferentially (001)-oriented TCNQ-loaded HKUST-1 SURMOF film, 100 nm · Thin Film

In-plane I-V from -10 V to 10 V on preferentially oriented TCNQ-loaded HKUST-1 film on functionalized quartz.

Geometry
lateral in-plane current path parallel to film surface
Context
guest-loaded oriented sample
Measurement source
article page 7 · 1.2 Thin-film electrical conductometry · Figure 9(b)
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Preferentially oriented TCNQ-loaded film lateral currentzero lateral in-plane current from -10 V to 10 V0 Anot measurable within Figure 9 current scaleText
Qualitative
article page 7 · 1.2 Thin-film electrical conductometry · Figure 9(b)

Current-voltage measurement using Ecopia HMS-5300 Van der Pauw four-point configuration

Random polycrystalline pristine HKUST-1 SURMOF film on borosilicate glass, ca. 130 nm · Thin Film

Lateral in-plane I-V between Au contacts on pristine random polycrystalline film on borosilicate glass.

Geometry
1 cm x 1 cm square sample with four Au contacts
Context
pristine control
Measurement source
article page 7 · 1.2 Thin-film electrical conductometry · Figure 8(b)
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Pristine borosilicate film lateral currentpractically zero conductivity; current fluctuates around 0 nA over -10 to +10 V0 Anoise-level current in Figure 8(b)Text
Qualitative
article page 7 · 1.2 Thin-film electrical conductometry · Figure 8(b)

Current-voltage measurement using Ecopia HMS-5300 Van der Pauw four-point configuration

Random polycrystalline TCNQ-loaded HKUST-1 SURMOF film on borosilicate glass, ca. 130 nm · Thin Film

Lateral in-plane I-V between Au contact pairs AB, BC, CD and DA on TCNQ-loaded random polycrystalline film.

Geometry
1 cm x 1 cm square sample with four Au contacts; bottom contacts used to avoid surface damage
Context
guest-loaded compared with pristine glass-supported film
Measurement source
article pages 6-7 · 1.2 Thin-film electrical conductometry · Figure 8(a)
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
TCNQ-loaded borosilicate film current at positive high biasapproximately 60-100 nA near +9 to +10 V, depending on contact pair1e-7 Acontact-pair-dependent; visual estimate from plotFigure Axis
Range
article page 7 · Figure 8 · Figure 8(a)