Lu Y., Zhang S., Dai S. et al. · Matter · 2020 · 904-919
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
Using AC bias allows simultaneous Cp/Rp sensing with a stabilised baseline and better sensitivity than current mode for LIB electrolyte leakage.
Caveat: Bias-stress cancellation is argued from device behaviour rather than a separate quantitative bias-stress study.
905 · Introduction · Linked to 5 structured results
IC-MOF thin-film sensors detect ultralow DMC vapour and trace LIB electrolyte leakage within seconds.
Caveat: Some response-time wording differs between the Figure 3 text (7.5 s response, 9.5 s recovery for 50 ppb DMC) and conclusion (t90 less than 2 s for ultralow DMC/electrolyte).
915-916 · Conclusion · Linked to 4 structured results
In an actual punctured LIB test, the IC-MOF sensor signalled electrolyte leakage before the battery voltage showed a meaningful difference from a pristine battery.
Caveat: Demonstrated in a laboratory sealed-chamber puncture test, not in an operational battery pack.
912 · Real-Time Monitoring of Leakage from LIB by IC-MOF Sensors · Figure 5 · Linked to 3 structured results
A 150 nm IC-MOF film gives the best sensing performance among the tested 100, 150, and 200 nm films.
Caveat: Quantitative thickness-response values in Supplementary Fig. 12 are figure-axis estimates, except the best-thickness statement is reported in text.
910 · Assessment of IC-MOF-Based Devices by Capacitance and Resistance Signals under AC Mode · Figure S12 · Linked to 3 structured results
Copper ions remaining/doped in IC-MOF interlayers act as ionic charge carriers and are critical for current, capacitance, and resistance sensing signals.
Caveat: Authors also note possible contributions from dipole interactions, adsorption-desorption, and open coordination sites.
914-915 · Sensing Mechanism · Figure 6C · Linked to 6 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| Cu-TCPP MOF thin film without free metal ions | Not specifiedCu coordinated within copper tetrakis(4-carboxyphenyl)porphyrin MOF nanosheets · copper tetrakis(4-carboxyphenyl)porphyrin (Cu-TCPP) | 2D · PristineControl Cu-MOF nanosheet thin film prepared by solvothermal synthesis and drop casting; synchrotron XRD profile shows a Cu-MOF thin-film out-of-plane reflection. | 913 · Sensing Mechanism · Figures S2F and S3B |
| ionically conductive MOF (IC-MOF) thin film | Not specifiedCu(II) coordinated to tetrakis(4-carboxyphenyl)porphyrin; additional/free Cu ions remain between MOF nanosheet layers as mobile ion carriers · 5,10,15,20-tetrakis(4-carboxyphenyl)porphyrin (H2TCPP) | 2D · PristinePorphyrin-based layered MOF nanosheet film with ordered layer stacking; PXRD indexed to (001)/(002) reflections and interlayer spacing of 7.123(5) Angstrom. | 906-907 · MOF Synthesis and Sensing Setup · Figure 1; Figures S2-S4 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| Cu-TCPP MOF nanosheet thin-film control sensorresearch_0352__mat__mat_cu_tcpp_mof | Thin Film · Pristine Control · Pristine Framework | solvothermal Cu-TCPP nanosheets dispersed in ethanol and drop-cast as a thin filmquartz sheet or silicon wafer pretreated by plasma for 10 min | 916-917 · Preparation of Cu-TCPP MOF Thin Films without Free Metal Ions · Figures S2F, S3B, and S17 |
| IC-MOF thin film on quartz or silicon waferresearch_0352__mat__mat_ic_mof | Thin Film · Target Sample · Doped | free-standing maroon film transferred from water surface, naturally dried, vacuum heated at 80 deg C for 2 hquartz sheet or silicon wafer pretreated by plasma for 10 min · about 150 nm for the main device films; 100, 150, and 200 nm variants tested | 907 · MOF Synthesis and Sensing Setup · Figures S3 and S4 |
| IC-MOF chemicapacitor/chemiresistor sensor with gold electrodesresearch_0352__mat__mat_ic_mof | Electrode · Target Sample · Doped | horizontal interdigitated-electrode sensing device operated under current mode or AC capacitance/resistance modequartz surface with 40 nm gold electrodes on top of IC-MOF film · MOF film about 150 nm; Au electrodes 40 nm | 907 · MOF Synthesis and Sensing Setup · Figure 1B; Figure S1 |
| ethanethiol-treated IC-MOF sensorresearch_0352__mat__mat_ic_mof | Electrode · Model System · Guest Loaded | IC-MOF sensor exposed to excessive ethanethiol for a few minutes to poison/free Cu ion sitesIC-MOF sensor device | 914 · Sensing Mechanism · Figures 6A, S18, and S19 |
| ethanethiol-treated IC-MOF sensor after vacuum heatingresearch_0352__mat__mat_ic_mof | Electrode · Model System · Guest Loaded | ethanethiol-poisoned IC-MOF sensor heated at 80 deg C under vacuum for about 2 hIC-MOF sensor device | 914 · Sensing Mechanism · Figures 6A, S18, and S19 |