Synthesis · Ultrasensitive Detection of Electrolyte Leakage from Lithium-Ion Batteries by Ionically Conductive Metal-Organic Frameworks

3 structured synthesis routes

Completeness describes how fully the route could be reconstructed from the main article and supporting information.

Complete recipeSource: Main

916-917 · Preparation of Cu-TCPP MOF Thin Films without Free Metal Ions

Metal precursorsCu(NO3)2.3H2O, 7.3 mg, 0.03 mmol

Linker precursorsH2TCPP, 7.9 mg, 0.01 mmol

Solvents18 mL N,N-diethylformamide (DMF); ethanol for colloidal nanosheet suspension

Atmospherenot specified

Temperature35 deg C then 85 deg C, cooled to 35 deg C at 5 deg C/h

Timeheat to 35 deg C over 1 h; hold 35 deg C for 10 h; heat to 85 deg C over 10 h; hold 85 deg C for 1 day

Substrate orientationdrop-cast onto quartz sheet or silicon wafer pretreated by plasma for 10 min

Work-uppurple sample dispersed in ethanol to form colloidal suspension; placed dropwise onto substrate

Show 4 structured reagent records

Role	Reagent	Amount / concentration	Source
Linker	H2TCPP	7.9 mg, 0.01 mmol	916-917 · Preparation of Cu-TCPP MOF Thin Films without Free Metal Ions
Metal Source	Cu(NO3)2.3H2O	7.3 mg, 0.03 mmol	916-917 · Preparation of Cu-TCPP MOF Thin Films without Free Metal Ions
Solvent	N,N-diethylformamide (DMF)	18 mL	916-917 · Preparation of Cu-TCPP MOF Thin Films without Free Metal Ions
Solvent	ethanol	colloidal suspension	916-917 · Preparation of Cu-TCPP MOF Thin Films without Free Metal Ions

Partial recipeSource: Both

907 · MOF Synthesis and Sensing Setup · Figure 1B; Figure S1

Metal precursors40 nm gold electrodes deposited after IC-MOF thin-film deposition

Substrate orientationgold electrodes on top of IC-MOF films; conductive channel length 100 um and width 1,000 um

Work-updevice placed in home-made Teflon chamber with gas inlet and outlet ports

Show 1 structured reagent record

Role	Reagent	Amount / concentration	Source
Other	gold electrodes	40 nm	907 · MOF Synthesis and Sensing Setup · Figure 1B; Figure S1

Complete recipeSource: Both

916 · Preparation of IC-MOF Thin Films by Modified Spray Liquid-Interface Process · Figure S1

Metal precursorsCopper(II) nitrate trihydrate, Cu(NO3)2.3H2O, 1 mM aqueous solution

Linker precursorsH2TCPP, 0.2 mM in toluene/EtOH

Solventstoluene/EtOH (v/v = 1:1) for ligand solution; deionized water for Cu(NO3)2.3H2O solution

Atmosphereambient/not specified

Temperatureroom temperature for spraying/drying; 80 deg C activation

Time2 h vacuum heating after natural drying

Substrate orientationquartz sheet or silicon wafer pretreated by plasma for 10 min; film deposited from water surface

Work-upresidual reaction solution removed carefully by syringe; free-standing films deposited onto substrate; natural drying

Activationheated at 80 deg C under vacuum for 2 h to remove remaining moisture

Scalability contextAuthors emphasise mild conditions, low cost, large area, good uniformity, and no specific expensive equipment.

Show 4 structured reagent records

Role	Reagent	Amount / concentration	Source
Metal Source	Copper(II) nitrate trihydrate (Cu(NO3)2.3H2O)	1 mM	916 · Preparation of IC-MOF Thin Films by Modified Spray Liquid-Interface Process · Figure S1
Linker	H2TCPP	0.2 mM	916 · Preparation of IC-MOF Thin Films by Modified Spray Liquid-Interface Process · Figure S1
Solvent	toluene/EtOH	v/v = 1:1	916 · Preparation of IC-MOF Thin Films by Modified Spray Liquid-Interface Process · Figure S1
Solvent	deionized water	Not specified	916 · Preparation of IC-MOF Thin Films by Modified Spray Liquid-Interface Process · Figure S1