Primary studyCore evidenceThin Film Device

High-performance field-effect transistor glucose biosensors based on bimetallic Ni/Cu metal-organic frameworks

Wang B., Luo Y., Gao L. et al. · Biosensors and Bioelectronics · 2021 · 112736

7materials
12samples
12synthesis routes
15measurements
55results
6claims and caveats

Evidence map

Open a family to keep every result attached to its sample, method and conditions.

Author interpretations and caveats

Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.

Application RelevanceSupport assessment: High

GOD-GA-Ni/Cu-MOFs (7:1)-FET gives wide-range glucose detection, high low-range sensitivity, low LOD, specificity and reproducibility.

Caveat: Long-term stability is limited; most performance values are reported in text/table with SI plots as supporting evidence.

7 · Conclusion · Linked to 5 structured results

CaveatSupport assessment: High

The enzyme sensor does not have good long-term stability and is positioned as a disposable real-time glucose sensor.

Caveat: Detailed current values in Fig. S17 were not digitised; the main text and rendered SI support the qualitative storage trend.

7 · Conclusion · Fig. S17 · Linked to 4 structured results

Phase AssignmentSupport assessment: High

Ni/Cu-MOFs (7:1), Ni-MOFs and Cu-MOFs have similar crystal structures based on consistent PXRD peak positions.

Caveat: No CIF is available locally; assignment relies on PXRD comparison in the article and SI.

3 · 3.1 · Fig. 2a · Linked to 2 structured results

Structure Property LinkSupport assessment: Medium

XPS shifts are interpreted as local electron transfer between Ni and Cu through the aromatic ligand, producing a Ni-Cu coupling effect.

Caveat: Mechanistic interpretation is inferred from binding-energy shifts rather than directly measured carrier pathways.

4 · 3.1 · Fig. 2d · Linked to 5 structured results

Transport MechanismSupport assessment: Medium

The synergistic effect of Ni and Cu in Ni/Cu-MOFs improves carrier transfer, active metal sites and FET current compared with monometallic controls.

Caveat: Main text reports relative current improvement but does not provide an absolute conductivity value.

5 · 3.2 · Fig. S9 · Linked to 2 structured results

Transport MechanismSupport assessment: Medium

Glucose oxidase converts glucose to gluconolactone and hydrogen peroxide; generated H+ decreases conductance of p-type Ni/Cu-MOF channel layers under negative gate voltage.

Caveat: Mechanism is consistent with controls but proton accumulation is not directly quantified.

6 · 3.3 · Reactions 1-2 · Linked to 2 structured results

Material identities

Names and aliases are kept exactly within the paper’s own identity model.

MaterialCompositionStructure contextSource
BSA-GOD-GA-Ni/Cu-MOFsBSA-blocked GOD/GA modified Ni/Cu-MOFsNi and Cu ions in the MOF channel layer · HATP-derived framework linker plus glutaraldehyde enzyme linker2D · CompositeBSA-blocked functionalised bimetallic MOF-FET control.2 · 2.3
Cu-MOFsCu coordination framework with HATP-derived hexaaminobenzene linker; empirical formula not reportedCu ions · HATP-derived hexaaminobenzene linker2D · PristineMonometallic Cu analogue; PXRD similar to Ni/Cu-MOFs but film quality/electrical leakage is poorer.3 · 3.1 · Fig. 2
GA-Ni/Cu-MOFsglutaraldehyde modified Ni/Cu-MOFsNi and Cu ions in the MOF channel layer · HATP-derived framework linker plus glutaraldehyde2D · CompositeGA-modified bimetallic MOF control without GOD.2 · 2.3
GOD-GA-Ni-MOFsglucose oxidase and glutaraldehyde modified Ni-MOFsNi ions · HATP-derived framework linker plus glutaraldehyde enzyme linker2D · CompositeFunctionalised monometallic Ni-MOF control.2 · 2.3
GOD-GA-Ni/Cu-MOFsglucose oxidase and glutaraldehyde modified Ni/Cu-MOFsNi and Cu ions in the MOF channel layer · HATP-derived framework linker plus glutaraldehyde enzyme linker2D · CompositeFunctionalised bimetallic MOF-FET channel for enzymatic glucose sensing.2 · 2.3 · Fig. 1
Ni-MOFsNi coordination framework with HATP-derived hexaaminobenzene linker; empirical formula not reportedNi ions · HATP-derived hexaaminobenzene linker2D · PristineMonometallic Ni analogue; PXRD peaks at 2theta 4.7, 9.5, 12.5, 16.5 and 27.1 deg similar to Ni/Cu-MOFs.3 · 3.1 · Fig. 2
bimetallic Ni/Cu-MOFsNi/Cu coordination framework with HATP-derived hexaaminobenzene linker; empirical formula not reportedNi and Cu ions; target feeding ratios varied from Ni:Cu 1:7 to 30:1 · 2,3,6,7,10,11-hexaaminohexatyl hydrogen hexachloride (HATP.6HCl)2D · PristineLayered conductive MOF film with PXRD peaks consistent with monometallic Ni-MOFs/Cu-MOFs and assigned (100), (200) and (001) planes.1-3 · Abstract; 2.2; 3.1 · Fig. 2

Sample register

Sample form, processing state and composition status define the context for measurements.

Show 12 sample records
SampleForm and roleProcessing and geometrySource
BSA-GOD-GA-Ni/Cu-MOFs (7:1)-FETresearch_0460__mat__mat_bsa_god_ga_nicu_mofsElectrode · Composite Sample · CompositeGOD-GA-Ni/Cu-MOFs (7:1)-FET blocked with BSAFET device with Ni/Cu-MOFs (7:1) channel layer2 · 2.3
Cu-MOFs-FETresearch_0460__mat__mat_cu_mofsElectrode · Pristine Control · Pristine Frameworkmonometallic Cu-MOF film channel layerFET device substrateS1
GA-Ni/Cu-MOFs (7:1)-FETresearch_0460__mat__mat_ga_nicu_mofsElectrode · Composite Sample · Guest LoadedNi/Cu-MOFs (7:1)-FET modified with GA without GODFET device with Ni/Cu-MOFs (7:1) channel layer2 · 2.3
GOD-GA-Ni-MOFs-FETresearch_0460__mat__mat_god_ga_ni_mofsElectrode · Composite Sample · CompositeNi-MOFs-FET modified with GA and GODFET device with Ni-MOFs channel layer2,6 · 2.3; 3.3 · Fig. S12b
GOD-GA-Ni/Cu-MOFs (7:1)-FETresearch_0460__mat__mat_god_ga_nicu_mofsElectrode · Target Sample · CompositeNi/Cu-MOFs (7:1)-FET modified with glutaraldehyde and glucose oxidaseFET device with Ni/Cu-MOFs (7:1) channel layer · MOF film about 489 nm before enzyme modification2 · 2.3 · Fig. 1
Ni-MOFs-FETresearch_0460__mat__mat_ni_mofsElectrode · Pristine Control · Pristine Frameworkmonometallic Ni-MOF film channel layerFET device substrate · 516 nm for Ni-MOFs film4 · 3.1 · Fig. 3g
Ni/Cu-MOFs (10:1)-FETresearch_0460__mat__mat_nicu_mofsElectrode · Pristine Control · Mixed Metalin situ grown bimetallic MOF film channel layerSi/SiO2 FET device with Ti/Au source-drain electrodes2,5 · 2.2; 3.2 · Fig. S8
Ni/Cu-MOFs (1:1)-FETresearch_0460__mat__mat_nicu_mofsElectrode · Pristine Control · Mixed Metalin situ grown bimetallic MOF film channel layerSi/SiO2 FET device with Ti/Au source-drain electrodes2 · 2.2
Ni/Cu-MOFs (1:7)-FETresearch_0460__mat__mat_nicu_mofsElectrode · Pristine Control · Mixed Metalin situ grown bimetallic MOF film channel layerSi/SiO2 FET device with Ti/Au source-drain electrodes2,5 · 2.2; 3.1 · Fig. S7
Ni/Cu-MOFs (20:1)-FETresearch_0460__mat__mat_nicu_mofsElectrode · Pristine Control · Mixed Metalin situ grown bimetallic MOF film channel layerSi/SiO2 FET device with Ti/Au source-drain electrodes2,5 · 2.2; 3.1 · Fig. S6a
Ni/Cu-MOFs (30:1)-FETresearch_0460__mat__mat_nicu_mofsElectrode · Pristine Control · Mixed Metalin situ grown bimetallic MOF film channel layerSi/SiO2 FET device with Ti/Au source-drain electrodes2,5 · 2.2; 3.1 · Fig. S6a
Ni/Cu-MOFs (7:1)-FETresearch_0460__mat__mat_nicu_mofsElectrode · Pristine Control · Mixed Metalin situ grown bimetallic MOF film channel layerSi/SiO2 FET device with Ti/Au source-drain electrodes · about 489 nm2,4 · 2.2; 3.1 · Fig. 3h