CASTEP DFT band structure and DOS/PDOS; PBE functional within GGA; norm-conserving pseudopotentials
compound 1 computational model · Model
Structural model built from single-crystal XRD data; plane-wave cutoff 750 eV.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| calculated indirect band gap | 0.771 eV | — | — | Text Exact Reported | 22507 · 3.4 Semiconductive Properties · Figure 6c |
| compound 1 conduction-band dispersion widthMarked as a best value within this paper | approximately 0.25 eV along Gamma-Y and C-Z | — | — | Text Approximate | 22507 · 3.4 Semiconductive Properties · Figure S14 |