Four-probe I-V measurement with Keithley source meter controlled by PET I-V test system
glass/ITO/IRMOF-8 microstructures/Cu thin-film device · Electrode
Electrical conductivity calculated from slopes of ohmic regions of multiple I-V curves; measurements conducted immediately after Cu cathode deposition.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| maximum reported electrical conductivityMarked as a best value within this paper | 3.98 x 10-2 S cm-1 | 0.0398 S cm-1 | — | Text Exact Reported | 111 · 3.4. Electrical conductivity · Fig. 5(c) |
| minimum reported electrical conductivity | 2.16 x 10-2 S cm-1 | 0.0216 S cm-1 | — | Text Exact Reported | 111 · 3.4. Electrical conductivity · Fig. 5(c) |
| device active cell area | 4.75 cm2 | 0.000475 m2 | — | Text Exact Reported | 108 · 2.3. Electrical conductivity measurements |
| device channel length | 2.5 cm | 0.025 m | — | Text Exact Reported | 108 · 2.3. Electrical conductivity measurements |
| Cu cathode thickness | 100 nm | 1e-7 m | — | Text Exact Reported | 108 · 2.1. Materials |
| SI schematic device stack | glass/ITO/IRMOF-8 microstructures/Cu | — | — | Caption Qualitative | SI page 2 · Figure S3 · Figure S3 |
| approximate I-V plot voltage-axis upper limit | approximately 0.15 V | 0.15 V | visual estimate from Fig. 5(c) axis | Figure Axis Approximate | 111 · Figure 5 · Fig. 5(c) |
| approximate I-V plot voltage-axis lower limit | approximately -0.15 V | -0.15 V | visual estimate from Fig. 5(c) axis | Figure Axis Approximate | 111 · Figure 5 · Fig. 5(c) |