Metal precursorspreformed IRMOF-8 microstructures
SolventsDMF dispersion (25 mg microstructures in 500 uL DMF)
Additivessubstrate cleaning: dichloromethane, soap solution, ammonium hydroxide/hydrogen peroxide mixture
Atmospherevacuum drying under nitrogen; transferred into nitrogen filled sealed chamber after Cu deposition
Temperature50-70 during substrate NH4OH/H2O2 cleaning; room temperature not otherwise specified
Timespin coat 60 s; UV cleaning 35 min; NH4OH/H2O2 cleaning 15 min; ultrasonic water rinse 15 min
Substrate orientationITO-coated glass; Cu top electrode
Oxidant / reductanthydrogen peroxide in substrate cleaning mixture
Work-upSpin coat at 1000 rpm for 60 s; vacuum dry under nitrogen; deposit 100 nm Cu cathode by PVD e-beam.
ActivationUV/ozone cleaning of substrate before deposition; no MOF activation reported.
Scalability contextThin-film device fabrication by solution spin coating.
Show 4 structured reagent records
| Role | Reagent | Amount / concentration | Source |
|---|
| Other | IRMOF-8 microstructures | 25 mg · 25 mg in 500 uL DMF | 108 · 2.3. Electrical conductivity measurements · Figure S3 |
| Solvent | DMF | 500 uL | 108 · 2.3. Electrical conductivity measurements · Figure S3 |
| Other | Copper cathode | 100 nm thick Cu layer | 108 · 2.3. Electrical conductivity measurements · Figure S3 |
| Other | ITO-coated glass substrate | Not specified | 108 · 2.3. Electrical conductivity measurements · Figure S3 |