XPS valence band spectroscopy, diffuse reflectance spectroscopy, and Mott-Schottky analysis
CM-coated FTO working electrode · Electrode
Valence band potential, optical band gap and flat-band potential measured/deduced; Mott-Schottky in 0.5 M sodium sulfate at 1000 Hz.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| CM optical band gapMarked as a best value within this paper | 2.75 eV | — | — | Text Exact Reported | p003 · 2.2 Piezoelectric properties and sonocatalytic mechanism · Fig. 2f |
| CM flat-band potential versus Ag/AgCl | -1.38 eV relative to Ag/AgCl | — | — | Text Exact Reported | p003 · 2.2 Piezoelectric properties and sonocatalytic mechanism · Fig. S8 |
| CM flat-band potential versus NHE | -0.77 eV versus NHE | — | — | Text Exact Reported | p003 · 2.2 Piezoelectric properties and sonocatalytic mechanism · Fig. S8 |
| CM semiconductor typeMarked as a best value within this paper | n-type semiconductor | — | — | Text Qualitative | p003 · 2.2 Piezoelectric properties and sonocatalytic mechanism · Fig. S8 |
| CM valence band potentialMarked as a best value within this paper | 1.98 eV | — | — | Text Exact Reported | p003 · 2.2 Piezoelectric properties and sonocatalytic mechanism · Fig. 2e |
| Mott-Schottky measurement frequency | 1000 Hz | — | — | Text Exact Reported | S3 · 4. Semiconductor Performance Testing · Fig. S8 |