Zhang F., Zhang T., Zou X. et al. · Solid State Ionics · 2017 · 125-132
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
XPS and FT-IR confirm the presence of Keggin PTA within the NENU-3 framework.
Caveat: The assigned PTA location within cavities follows the NENU-3 structural model and spectroscopic consistency.
6 · Synthesis and characterizations · Fig. 5; Fig. S1 · Linked to 6 structured results
A 2.0 V applied voltage is the authors' optimum for forming continuous NENU-3 films; higher voltages produce larger crystals and thicker films.
Caveat: Optimisation is based on morphology/continuity rather than conductivity for each voltage variant.
5 · Synthesis and characterizations · Fig. 2 · Linked to 4 structured results
PTA encapsulation in NENU-3 improves hydrolytic and oxidative stability relative to HKUST-1 and helps preserve PXRD under water and Fenton/oxygen exposures.
Caveat: Hydrolytic comparison is direct by PXRD, but the precise stabilisation mechanism is inferred by the authors.
6-7 · Stability · Fig. 6B; Fig. 7 · Linked to 4 structured results
Applied voltage releases Cu2+ from the copper anode; Cu2+ reacts with BTC ligand while PTA is incorporated into NENU-3 pores and also acts as electrolyte.
Caveat: Mechanistic interpretation is supported indirectly by ICP-AES Cu2+ trends and morphology, not by in situ speciation.
4-5 · Synthesis and characterizations · Table 1; Table 2 · Linked to 6 structured results
NENU-3 proton conductivity is strongly humidity dependent and increases by about four orders of magnitude from ~33% RH to ~97% RH at 24 deg C.
Caveat: Intermediate humidity values from Fig. 8c are visual estimates unless explicitly reported in text.
7 · Proton conduction · Fig. 8 · Linked to 3 structured results
PTA clusters function as proton carriers/pathways in NENU-3, giving higher conductivity and lower activation energy than PTA-free HKUST-1.
Caveat: Transport pathway assignment is inferred from comparison with PTA-free HKUST-1 and humidity/temperature dependence.
7 · Proton conduction · Fig. 8; Fig. 9 · Linked to 4 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| PTA-free HKUST-1 controlBrowse family: HKUST-1 / Cu₃(BTC)₂ | Cu3(BTC)2 / HKUST-1Cu paddlewheel nodes · 1,3,5-benzenetricarboxylate (BTC3-) | 3D · PristinePTA-free HKUST-1 comparison material used for water-stability and proton-conductivity control measurements. | 5-7 · Stability; Proton conduction · Fig. 6B; Fig. 8d; Fig. 9b |
| NENU-3 filmBrowse family: HKUST-1 / Cu₃(BTC)₂ | PTA integrated in Cu3(BTC)2 cavities; paper also writes Cu2(BTC)3 in conclusionsCu paddlewheel/HKUST-type copper nodes · 1,3,5-benzenetricarboxylate (BTC3-) | 3D · PristineHost-guest MOF film containing Keggin-type phosphotungstic acid clusters occluded in the Cu3(BTC)2/HKUST-1 framework; PXRD matches simulated NENU-3 single-crystal pattern. | 1 · Abstract |
| phosphotungstic acid reference | PTA; Keggin-type heteropolyacidP-W oxygen cluster · not applicable | 0D · Model SystemMolecular Keggin-type phosphotungstic acid used as electrolyte/guest and XPS reference. | 2 · Experimental section |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| PTA-free HKUST-1 controlresearch_0529__mat__mat_hkust1_control | Thin Film · Pristine Control · Pristine Framework | Fresh prepared HKUST-1 / PTA-free HKUST-1 control; preparation details not given in main text or SI text.not reported · not reported | 5-7 · Stability; Proton conduction · Fig. 6B; Fig. 8d; Fig. 9b |
| NENU-3 film, 1.0 V for 2 hresearch_0529__mat__mat_nenu3 | Thin Film · Target Sample · Guest Loaded | Electrochemical growth at 1.0 V for 2 h; scattered crystals under low voltage.copper substrate · 0.3-0.4 um | 5 · Synthesis and characterizations · Fig. 2a,e |
| NENU-3 film, 2.0 V for 0.5 hresearch_0529__mat__mat_nenu3 | Thin Film · Target Sample · Guest Loaded | Electrochemical growth at 2.0 V for 0.5 h.copper substrate · about 1.0 um | 5 · Synthesis and characterizations · Fig. 4a,d |
| NENU-3 film, 2.0 V for 1 hresearch_0529__mat__mat_nenu3 | Thin Film · Target Sample · Guest Loaded | Electrochemical growth at 2.0 V for 1 h.copper substrate · 2.3 um | 5 · Synthesis and characterizations · Fig. 4b,e |
| NENU-3 film, 2.0 V for 2 hresearch_0529__mat__mat_nenu3 | Thin Film · Target Sample · Guest Loaded | Electrochemical growth at 2.0 V for 2 h; identified as optimal voltage for continuous NENU-3 films.copper substrate · 2.0-2.5 um | 5 · Synthesis and characterizations · Fig. 2b,f |
| NENU-3 film, 2.0 V for 8 hresearch_0529__mat__mat_nenu3 | Thin Film · Target Sample · Guest Loaded | Electrochemical growth at 2.0 V for 8 h; compound collected from this film used for XPS/FT-IR.copper substrate · 3.8-4.2 um for growth times higher than 2 h | SI · Supporting Information · Figure S1 |
| NENU-3 film, 5.0 V for 2 hresearch_0529__mat__mat_nenu3 | Thin Film · Target Sample · Guest Loaded | Electrochemical growth at 5.0 V for 2 h.copper substrate · 4.0 um | 5 · Synthesis and characterizations · Fig. 2c,g |
| NENU-3 film, 8.0 V for 2 hresearch_0529__mat__mat_nenu3 | Thin Film · Target Sample · Guest Loaded | Electrochemical growth at 8.0 V for 2 h.copper substrate · 12.0 um | 5-7 · Synthesis and characterizations; Proton conduction · Fig. 2d,h; Fig. 8 |
| as-prepared NENU-3 films on copperresearch_0529__mat__mat_nenu3 | Thin Film · Target Sample · Guest Loaded | Electrochemically grown at room temperature, washed with ethanol and water, dried overnight at room temperature.copper substrate / copper anode · variable with applied voltage and reaction time | 2 · Syntheses of NENU-3 films |
| pure PTA referenceresearch_0529__mat__mat_pta_reference | Powder · Model System · Model | Commercial phosphotungstic acid used as supplied and as XPS reference. | 2 · Chemicals and reagents |