Diffraction Structure — Electrochemical synthesis of metal organic framework films with proton conductive property

5 measurement groups · 12 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

as-prepared NENU-3 films on copper · Thin Film

NENU-3 film soaked in water at room temperature for 3 days; HKUST-1 comparison immersed in water for 30 min.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HKUST-1 water instability	structure collapse after immersion in water for 30 min	—	—	Text Qualitative	6 · Stability · Fig. 6B
NENU-3 hydrolytic stability	minimal PXRD changes after water immersion for 3 days	—	—	Text Qualitative	6 · Stability · Fig. 6B

as-prepared NENU-3 films on copper · Thin Film

NENU-3 films exposed to air and oxygen at 50 deg C for 12 h, and to Fenton reagent at 50 deg C up to 24 h.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
air oxidative-stability exposure	50 deg C for 12 h	—	—	Text Rounded Reported	6-7 · Stability · Fig. 7
Fenton reagent intact time	film remains intact after 6 h	—	—	Text Rounded Reported	6-7 · Stability · Fig. 7
Fenton reagent PXRD retention time	negligible PXRD change after 24 h	—	—	Text Rounded Reported	6-7 · Stability · Fig. 7
Fenton reagent weight loss after 24 h	about 2.1% weight lost after 24 h	—	—	Text Approximate	6-7 · Stability · Fig. 7
oxygen oxidative-stability exposure	50 deg C for 12 h	—	—	Text Rounded Reported	6-7 · Stability · Fig. 7

as-prepared NENU-3 films on copper · Thin Film

NENU-3 films prepared for 0.5, 1 and 8 h at 2.0 V compared with simulated pattern.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
NENU-3 crystalline phase assigned across time series	PXRD pattern similar to simulated one, indicating high-purity crystalline phase	—	—	Qualitative Qualitative	5 · Synthesis and characterizations · Fig. 3

as-prepared NENU-3 films on copper · Thin Film

NENU-3 films prepared at 1.0, 2.0, 5.0 and 8.0 V for 2 h compared with simulated NENU-3 pattern.

Temperature: room temperature
Atmosphere: ambient
Geometry: films on copper substrate
Context: guest-loaded target framework
Measurement source: 2,5 · Characterizations; Synthesis and characterizations · Fig. 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
NENU-3 crystalline phase assigned across voltage series	PXRD patterns almost identical to NENU-3 single-crystal simulated pattern	—	—	Qualitative Qualitative	5 · Synthesis and characterizations · Fig. 1

as-prepared NENU-3 films on copper · Thin Film

NENU-3 framework described as a three-dimensional network with small and larger pores.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
larger pore diameter upper bound	11-15 A	—	—	Text Range	1-2 · Introduction
larger pore diameter lower bound	11-15 A	—	—	Text Range	1-2 · Introduction
small pore diameter	6 A	—	—	Text Rounded Reported	1-2 · Introduction