Microscopy Morphology — Electrochemical synthesis of metal organic framework films with proton conductive property

Measurement evidence

Microscopy Morphology

Electrochemical synthesis of metal organic framework films with proton conductive property · Zhang F., Zhang T., Zou X. et al. · Solid State Ionics · 2017 · 125-132

2 measurement groups · 16 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

FE-SEM top-view and cross-section imaging

Scanning electron microscopy

as-prepared NENU-3 films on copper · Thin Film

Time series at 0.5, 1 and 8 h at 2.0 V.

Geometry: NENU-3 films on copper substrate
Context: guest-loaded target framework
Measurement source: 4-5 · Synthesis and characterizations · Fig. 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
film thickness at 2.0 V for 0.5 h	about 1.0 um	—	—	Text Approximate	5 · Synthesis and characterizations · Fig. 4
thickness increase from 0.5 to 1 h	~92%	—	—	Text Approximate	5 · Synthesis and characterizations · Fig. 4
film thickness at 2.0 V for 1 h	2.3 um	—	—	Text Rounded Reported	5 · Synthesis and characterizations · Fig. 4
film thickness above 2 h upper bound	3.8-4.2 um	—	—	Text Range	5 · Synthesis and characterizations · Fig. 4
film thickness above 2 h lower bound	3.8-4.2 um	—	—	Text Range	5 · Synthesis and characterizations · Fig. 4

FE-SEM top-view and cross-section imaging

Scanning electron microscopy

as-prepared NENU-3 films on copper · Thin Film

Voltage series at 1.0, 2.0, 5.0 and 8.0 V for 2 h.

Geometry: NENU-3 films on copper substrate
Context: guest-loaded target framework
Measurement source: 3,5 · Fig. 2; Synthesis and characterizations · Fig. 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
crystal size at 1.0 V, 2 h	around 0.4 um	—	—	Text Rounded Reported	5 · Synthesis and characterizations · Fig. 2
film thickness at 1.0 V, 2 h upper bound	0.3-0.4 um	—	—	Text Range	5 · Synthesis and characterizations · Fig. 2
film thickness at 1.0 V, 2 h lower bound	0.3-0.4 um	—	—	Text Range	5 · Synthesis and characterizations · Fig. 2
crystal size at 2.0 V, 2 h	2.5 um	—	—	Text Rounded Reported	5 · Synthesis and characterizations · Fig. 2
film thickness at 2.0 V, 2 h upper bound	2.0-2.5 um	—	—	Text Range	5 · Synthesis and characterizations · Fig. 2
film thickness at 2.0 V, 2 h lower bound	2.0-2.5 um	—	—	Text Range	5 · Synthesis and characterizations · Fig. 2
crystal size at 5.0 V, 2 h	4.0 um	—	—	Text Rounded Reported	5 · Synthesis and characterizations · Fig. 2
film thickness at 5.0 V, 2 h	4.0 um	—	—	Text Rounded Reported	5 · Synthesis and characterizations · Fig. 2
crystal size at 8.0 V, 2 h upper bound	10-11 um	—	—	Text Range	5 · Synthesis and characterizations · Fig. 2
crystal size at 8.0 V, 2 h lower bound	10-11 um	—	—	Text Range	5 · Synthesis and characterizations · Fig. 2
film thickness at 8.0 V, 2 h	12.0 um	—	—	Text Rounded Reported	5 · Synthesis and characterizations · Fig. 2