Electrical Transport — Two-Dimensional Conductive Metal-Organic Framework Reinforced Spinterface in Organic Spin Valves

11 measurement groups · 53 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Two-probe conductivity measurement with Keithley 2636B source meter

Electrical conductivity

PcCu-Cu-30C MOF film · Thin Film

PcCu-Cu-30C film; Au-patterned two-probe conductivity versus temperature.

Temperature: 80-310
Atmosphere: vacuum for 300 K conductivity
Geometry: Parallel Au electrodes on glass/PcM-Cu film; channel length 100 um
Context: Pristine PcM-Cu MOF film controls.
Measurement source: S14 · Figure S15 · Figure S15

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
PcCu-Cu-30C conductivity at 300 KMarked as a best value within this paper	4.4 mS cm-1 in vacuum at 300 K	0.0044 S/cm	—	Text Exact Reported	211 · Electronic structure and charge transport properties · Figure 3b
PcCu-Cu activation energyMarked as a best value within this paper	0.20 eV	—	—	Text Exact Reported	S14 · Figure S15 · Figure S15d

Two-probe conductivity measurement with Keithley 2636B source meter

Electrical conductivity

PcH2-Cu-30C MOF film · Thin Film

PcH2-Cu-30C film; Au-patterned two-probe conductivity versus temperature.

Temperature: 80-310
Atmosphere: vacuum for 300 K conductivity
Geometry: Parallel Au electrodes on glass/PcM-Cu film; channel length 100 um
Context: Pristine PcM-Cu MOF film controls.
Measurement source: S14 · Figure S15 · Figure S15

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
PcH2-Cu-30C conductivity at 300 K	0.84 mS cm-1 in vacuum at 300 K	0.00084 S/cm	—	Text Exact Reported	211 · Electronic structure and charge transport properties · Figure 3c
PcH2-Cu activation energy	0.33 eV	—	—	Text Exact Reported	S14 · Figure S15 · Figure S15f

Two-probe conductivity measurement with Keithley 2636B source meter

Electrical conductivity

PcNi-Cu-30C MOF film · Thin Film

PcNi-Cu-30C film; Au-patterned two-probe conductivity versus temperature.

Temperature: 80-310
Atmosphere: vacuum for 300 K conductivity
Geometry: Parallel Au electrodes on glass/PcM-Cu film; channel length 100 um
Context: Pristine PcM-Cu MOF film controls.
Measurement source: S14 · Figure S15 · Figure S15

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
PcNi-Cu-30C conductivity at 300 K	0.66 mS cm-1 in vacuum at 300 K	0.00066 S/cm	—	Text Exact Reported	211 · Electronic structure and charge transport properties · Figure 3a
PcNi-Cu activation energy	0.28 eV	—	—	Text Exact Reported	S14 · Figure S15 · Figure S15b

Two-probe conductivity measurement with Keithley 2636B source meter

Electrical conductivity

PcM-Cu-nC MOF film series (M = Ni, Cu, H2; n = 10-40 cycles) · Thin Film

Au-patterned PcM-Cu MOF films; conductivity versus reciprocal temperature; vacuum at 300 K for reported conductivities.

Temperature: 80-310
Atmosphere: vacuum for 300 K conductivity
Geometry: Parallel Au electrodes on glass/PcM-Cu film; channel length 100 um
Context: Pristine PcM-Cu MOF film controls.
Measurement source: S14 · Figure S15 · Figure S15

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Temperature dependence of conductivity	Conductivity exhibited nonlinear increase with temperature, indicating semiconductor behaviour.	—	—	Qualitative Qualitative	211-212 · Electronic structure and charge transport properties · Figure 3

Magnetoresistance under swept in-plane magnetic field

STO/LSMO/PcM-Cu-nC/Co/Au OSV growth-cycle series (M = Ni, Cu, H2; n = 10-40) · Electrode

MR curves for OSVs with PcNi-Cu, PcCu-Cu, and PcH2-Cu MOF spacers at different LBL growth cycles; values read from blue figure labels in SI Figures S19-S21.

Temperature: 50
Geometry: Vertical STO/LSMO/PcM-Cu-nC/Co/Au OSVs
Context: Composite OSVs using PcM-Cu MOF spacers; pristine MOF film transport separately extracted.
Measurement source: S20-S21 · Section S3 · Figures S19-S21

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
PcCu-Cu OSV MR at 10 cycles and 50 K	10C MR = -20% at 50 K, 0.1 uA	-0.2 fraction	—	Figure Axis Rounded Reported	S20 · Section S3 · Figure S20
PcCu-Cu OSV MR at 20 cycles and 50 K	20C MR = -19% at 50 K, 0.1 uA	-0.19 fraction	—	Figure Axis Rounded Reported	S20 · Section S3 · Figure S20
PcCu-Cu OSV MR at 30 cycles and 50 K	30C MR = -19% at 50 K, 0.1 uA	-0.19 fraction	—	Figure Axis Rounded Reported	S20 · Section S3 · Figure S20
PcCu-Cu OSV MR at 40 cycles and 50 K	40C MR = -20% at 50 K, 0.1 uA	-0.2 fraction	—	Figure Axis Rounded Reported	S20 · Section S3 · Figure S20
PcH2-Cu OSV MR at 20 cycles and 50 K	20C MR = -17% at 50 K, 0.1 uA	-0.17 fraction	—	Figure Axis Rounded Reported	S21 · Section S3 · Figure S21
PcH2-Cu OSV MR at 30 cycles and 50 KMarked as a best value within this paper	30C MR = -22% at 50 K, 0.04 uA	-0.22 fraction	—	Figure Axis Rounded Reported	S21 · Section S3 · Figure S21
PcH2-Cu OSV MR at 40 cycles and 50 K	40C MR = -20% at 50 K, 0.03 uA	-0.2 fraction	—	Figure Axis Rounded Reported	S21 · Section S3 · Figure S21
PcNi-Cu OSV MR at 10 cycles and 50 KMarked as a best value within this paper	10C MR = -22% at 50 K, 0.1 uA	-0.22 fraction	—	Figure Axis Rounded Reported	S20 · Section S3 · Figure S19
PcNi-Cu OSV MR at 20 cycles and 50 K	20C MR = -9% at 50 K, 0.1 uA	-0.09 fraction	—	Figure Axis Rounded Reported	S20 · Section S3 · Figure S19
PcNi-Cu OSV MR at 30 cycles and 50 K	30C MR = -19% at 50 K, 0.1 uA	-0.19 fraction	—	Figure Axis Rounded Reported	S20 · Section S3 · Figure S19
PcNi-Cu OSV MR at 40 cycles and 50 K	40C MR = -11% at 50 K, 0.1 uA	-0.11 fraction	—	Figure Axis Rounded Reported	S20 · Section S3 · Figure S19

Magnetoresistance under swept in-plane magnetic field

STO/LSMO/PcCu-Cu-30C/Co/Au organic spin valve · Electrode

PPMS-DynaCool, four-probe method, constant alternating current, magnetic field swept from 1000 Oe to -1000 Oe; Figure 4b uses T = 50 K and I = 0.1 uA.

Temperature: 50
Geometry: Vertical STO/LSMO/PcCu-Cu-30C/Co/Au OSV
Context: Composite OSV using PcM-Cu MOF spacer; pristine MOF film transport separately extracted.
Measurement source: 212-213 · MR behavior of MOFs-based devices · Figure 4b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
MR of LSMO/PcCu-Cu-30C/Co/Au OSV at 50 K	-19% at 50 K, I = 0.1 uA	-0.19 fraction	—	Caption Rounded Reported	213 · MR behavior of MOFs-based devices · Figure 4b

Magnetoresistance under swept in-plane magnetic field

STO/LSMO/PcH2-Cu-30C/Co/Au organic spin valve · Electrode

Temperature-dependent MR for LSMO/PcH2-Cu-30C/Co/Au OSVs.

Temperature: 50
Geometry: Vertical STO/LSMO/PcH2-Cu-30C/Co/Au OSV
Context: Composite OSV using PcH2-Cu MOF spacer.
Measurement source: 212 · MR behavior of MOFs-based devices · Supporting Information Figures S18 and S21

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
MR of LSMO/PcH2-Cu-30C/Co/Au OSV at 50 KMarked as a best value within this paper	-22% at 50 K	-0.22 fraction	—	Text Rounded Reported	212 · MR behavior of MOFs-based devices · Supporting Information Figures S18 and S21

Magnetoresistance air-stability comparison

STO/LSMO/PcNi-Cu-30C/Co/Au organic spin valve · Electrode

Pristine and after-7-days LSMO/PcNi-Cu-30C/Co/Au device MR traces measured at 50 K.

Temperature: 50
Atmosphere: air exposure for 7 days before repeated measurement
Geometry: Vertical STO/LSMO/PcNi-Cu-30C/Co/Au OSV
Context: Composite OSV stability; pristine PcNi-Cu film transport separately extracted.
Measurement source: S23 · Section S3 · Figure S24

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
PcNi-Cu-30C OSV MR after 7 days in air	approximately -16% to -17% at 50 K after 7 days	-0.165 fraction	approximate	Visual Estimate Approximate	S23 · Section S3 · Figure S24

Magnetoresistance under swept in-plane magnetic field

STO/LSMO/PcNi-Cu-30C/Co/Au organic spin valve · Electrode

PPMS-DynaCool, four-probe method, constant alternating current, magnetic field swept from 1000 Oe to -1000 Oe; Figure 4a uses T = 50 K and I = 0.1 uA.

Temperature: 50
Geometry: Vertical STO/LSMO/PcNi-Cu-30C/Co/Au OSV
Context: Composite OSV using PcM-Cu MOF spacer; pristine MOF film transport separately extracted.
Measurement source: 212-213 · MR behavior of MOFs-based devices · Figure 4a,b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
MR of LSMO/PcNi-Cu-30C/Co/Au OSV at 50 K	-19% at 50 K, I = 0.1 uA	-0.19 fraction	—	Caption Rounded Reported	213 · MR behavior of MOFs-based devices · Figure 4a

Magnetoresistance reproducibility test under swept in-plane magnetic field

Six STO/LSMO/PcNi-Cu-30C/Co/Au reproducibility devices · Electrode

Six STO/LSMO/PcNi-Cu-30C/Co/Au OSVs measured at T = 50 K and I = 0.1 uA.

Temperature: 50
Geometry: Vertical STO/LSMO/PcNi-Cu-30C/Co/Au OSV
Context: Composite OSV reproducibility; pristine PcNi-Cu film transport separately extracted.
Measurement source: S22-S23 · Section S3 · Figures S22-S23

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
PcNi-Cu-30C reproducibility device 1 MR	Device 1: -5% at 50 K	-0.05 fraction	—	Figure Axis Rounded Reported	S22-S23 · Section S3 · Figures S22-S23
PcNi-Cu-30C reproducibility device 2 MR	Device 2: -19% at 50 K	-0.19 fraction	—	Figure Axis Rounded Reported	S22-S23 · Section S3 · Figures S22-S23
PcNi-Cu-30C reproducibility device 3 MRMarked as a best value within this paper	Device 3: -21% at 50 K	-0.21 fraction	—	Figure Axis Rounded Reported	S22-S23 · Section S3 · Figures S22-S23
PcNi-Cu-30C reproducibility device 4 MR	Device 4: -20% at 50 K	-0.2 fraction	—	Figure Axis Rounded Reported	S22-S23 · Section S3 · Figures S22-S23
PcNi-Cu-30C reproducibility device 5 MR	Device 5: -19% at 50 K	-0.19 fraction	—	Figure Axis Rounded Reported	S22-S23 · Section S3 · Figures S22-S23
PcNi-Cu-30C reproducibility device 6 MR	Device 6: -9% at 50 K	-0.09 fraction	—	Figure Axis Rounded Reported	S22-S23 · Section S3 · Figures S22-S23

Magnetoresistance under swept in-plane magnetic field

STO/LSMO/PcM-Cu-30C/Co/Au OSV series (M = Ni, Cu, H2) · Electrode

Temperature dependence of MR for STO/LSMO/PcM-Cu-30C/Co/Au OSVs; SI curves read from rendered Figures S16-S18.

Temperature: 50-200
Geometry: Vertical STO/LSMO/PcM-Cu-30C/Co/Au OSV series
Context: Composite OSV using PcM-Cu MOF spacer; pristine MOF film transport separately extracted.
Measurement source: 212 · MR behavior of MOFs-based devices · Figure 4d; Figures S16-S23

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
PcNi-Cu OSV reproducibility fraction	80% of devices showed almost 20% MR values	0.8 fraction	almost 20% MR values	Text Approximate	212 · MR behavior of MOFs-based devices · Supporting Information Figures S22-S23
MR signal remaining at 200 K	less than -5% of the MR signal remaining at 200 K	-0.05 fraction	less than	Text Range	212 · MR behavior of MOFs-based devices · Figure 4d; Figures S16-S17
PcCu-Cu-30C OSV MR at 100 K	-16% at 100 K	-0.16 fraction	—	Figure Axis Rounded Reported	S18 · Section S3 · Figure S17
PcCu-Cu-30C OSV MR at 10 K	-20% at 10 K	-0.2 fraction	—	Figure Axis Rounded Reported	S18 · Section S3 · Figure S17
PcCu-Cu-30C OSV MR at 150 K	-11% at 150 K	-0.11 fraction	—	Figure Axis Rounded Reported	S18 · Section S3 · Figure S17
PcCu-Cu-30C OSV MR at 200 K	-2% at 200 K	-0.02 fraction	—	Figure Axis Rounded Reported	S18 · Section S3 · Figure S17
PcCu-Cu-30C OSV MR at 30 K	-20% at 30 K	-0.2 fraction	—	Figure Axis Rounded Reported	S18 · Section S3 · Figure S17
PcCu-Cu-30C OSV MR at 50 K	-19% at 50 K	-0.19 fraction	—	Figure Axis Rounded Reported	S18 · Section S3 · Figure S17
PcCu-Cu-30C OSV MR at 5 K	-20% at 5 K	-0.2 fraction	—	Figure Axis Rounded Reported	S18 · Section S3 · Figure S17
PcCu-Cu-30C OSV MR at 70 K	-19% at 70 K	-0.19 fraction	—	Figure Axis Rounded Reported	S18 · Section S3 · Figure S17
PcH2-Cu-30C OSV MR at 100 K	-11% at 100 K	-0.11 fraction	—	Figure Axis Rounded Reported	S19 · Section S3 · Figure S18
PcH2-Cu-30C OSV MR at 10 K	-20% at 10 K	-0.2 fraction	—	Figure Axis Rounded Reported	S19 · Section S3 · Figure S18
PcH2-Cu-30C OSV MR at 150 K	-4% at 150 K	-0.04 fraction	—	Figure Axis Rounded Reported	S19 · Section S3 · Figure S18
PcH2-Cu-30C OSV MR at 200 K	No MR at 200 K	0 fraction	—	Figure Axis Qualitative	S19 · Section S3 · Figure S18
PcH2-Cu-30C OSV MR at 50 KMarked as a best value within this paper	-22% at 50 K	-0.22 fraction	—	Figure Axis Rounded Reported	S19 · Section S3 · Figure S18
PcH2-Cu-30C OSV MR at 5 K	-19% at 5 K	-0.19 fraction	—	Figure Axis Rounded Reported	S19 · Section S3 · Figure S18
PcNi-Cu-30C OSV MR at 100 K	-14% at 100 K	-0.14 fraction	—	Figure Axis Rounded Reported	S17 · Section S3 · Figure S16
PcNi-Cu-30C OSV MR at 10 K	-19% at 10 K	-0.19 fraction	—	Figure Axis Rounded Reported	S17 · Section S3 · Figure S16
PcNi-Cu-30C OSV MR at 150 K	-9% at 150 K	-0.09 fraction	—	Figure Axis Rounded Reported	S17 · Section S3 · Figure S16
PcNi-Cu-30C OSV MR at 200 K	-5% at 200 K	-0.05 fraction	—	Figure Axis Rounded Reported	S17 · Section S3 · Figure S16
PcNi-Cu-30C OSV MR at 30 K	-20% at 30 K	-0.2 fraction	—	Figure Axis Rounded Reported	S17 · Section S3 · Figure S16
PcNi-Cu-30C OSV MR at 50 K	-19% at 50 K	-0.19 fraction	—	Figure Axis Rounded Reported	S17 · Section S3 · Figure S16
PcNi-Cu-30C OSV MR at 5 K	-20% at 5 K	-0.2 fraction	—	Figure Axis Rounded Reported	S17 · Section S3 · Figure S16
PcNi-Cu-30C OSV MR at 70 K	-17% at 70 K	-0.17 fraction	—	Figure Axis Rounded Reported	S17 · Section S3 · Figure S16
Contextual comparison: PcM-Cu-30C OSVs versus reported organic-spacer OSVs	Table S1 lists reported organic-spacer OSV MR values from No MR to 40%@11 K; current work reaches -22%@50 K in the main text.	—	—	SI Table Qualitative	S28 · Section S5 · Table S1