Other — Two-Dimensional Conductive Metal-Organic Framework Reinforced Spinterface in Organic Spin Valves

5 measurement groups · 23 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

M-H loops after field cooling and interface-control M-H loops

Magnetometry and magnetic susceptibility

STO/PcNi-Cu-30C/Co/Au heterostructure · Electrode

STO/PcM-Cu-30C/Co/Au heterostructures; Figure 5d at 50 K; Figure S29 at 10 K after cooling from 300 to 10 K in 5 T.

Temperature: 10; 50
Geometry: STO/PcM-Cu-30C/Co/Au heterostructure without LSMO bottom electrode
Context: Composite interface-control sample.
Measurement source: 214 · Results and Discussion · Figure 5d; Figure S29

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Coercive field of STO/PcNi-Cu-30C/Co/Au	~449 Oe at 50 K	—	~	Text Approximate	214 · Results and Discussion · Figure 5d
Pure PcM-Cu MOF film magnetism	PcNi-Cu, PcCu-Cu, and PcH2-Cu MOF films were non-magnetic and contribute little to device magnetism.	—	—	Qualitative Qualitative	214 · Results and Discussion · Supporting Information Figure S30

M-H loops after field cooling

Magnetometry and magnetic susceptibility

STO/PcM-Cu-30C/Co/Au heterostructure series (M = Ni, Cu, H2) · Electrode

Three batches each of STO/PcNi-Cu-30C/Co/Au, STO/PcCu-Cu-30C/Co/Au, and STO/PcH2-Cu-30C/Co/Au heterostructures measured at 10 K after 5 T field cooling.

Temperature: 10
Geometry: STO/PcM-Cu-30C/Co/Au heterostructure without LSMO bottom electrode
Context: Composite interface-control sample.
Measurement source: S26 · Section S4 · Figure S29

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
PcCu-Cu batch 1 exchange-bias field	HEB = -264 Oe after 5 T field cooling	—	—	Figure Axis Rounded Reported	S26 · Section S4 · Figure S29
PcCu-Cu batch 2 exchange-bias field	HEB = -271 Oe after 5 T field cooling	—	—	Figure Axis Rounded Reported	S26 · Section S4 · Figure S29
PcCu-Cu batch 3 exchange-bias fieldMarked as a best value within this paper	HEB = -303 Oe after 5 T field cooling	—	—	Figure Axis Rounded Reported	S26 · Section S4 · Figure S29
PcH2-Cu batch 1 exchange-bias field	HEB = -78 Oe after 5 T field cooling	—	—	Figure Axis Rounded Reported	S26 · Section S4 · Figure S29
PcH2-Cu batch 2 exchange-bias field	HEB = -134 Oe after 5 T field cooling	—	—	Figure Axis Rounded Reported	S26 · Section S4 · Figure S29
PcH2-Cu batch 3 exchange-bias field	HEB = -98 Oe after 5 T field cooling	—	—	Figure Axis Rounded Reported	S26 · Section S4 · Figure S29
PcNi-Cu batch 1 exchange-bias field	HEB = -184 Oe after 5 T field cooling	—	—	Figure Axis Rounded Reported	S26 · Section S4 · Figure S29
PcNi-Cu batch 2 exchange-bias field	HEB = -268 Oe after 5 T field cooling	—	—	Figure Axis Rounded Reported	S26 · Section S4 · Figure S29
PcNi-Cu batch 3 exchange-bias field	HEB = -250 Oe after 5 T field cooling	—	—	Figure Axis Rounded Reported	S26 · Section S4 · Figure S29

M-H loops after field cooling and interface-control M-H loops

Magnetometry and magnetic susceptibility

STO/PcM-Cu-30C/Co/Au heterostructure series (M = Ni, Cu, H2) · Electrode

STO/PcM-Cu-30C/Co/Au heterostructures measured at 10 K after cooling from 300 to 10 K in a 5 T field.

Temperature: 10; 50
Geometry: STO/PcM-Cu-30C/Co/Au heterostructure without LSMO bottom electrode
Context: Composite interface-control sample.
Measurement source: 214 · Results and Discussion · Figure S29

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Exchange-bias field range after field cooling	-78 to -303 Oe	—	range -78 to -303 Oe	Text Range	214 · Results and Discussion · Supporting Information Figure S29

Magnetic hysteresis M-H loops by SQUID-VSM

Magnetometry and magnetic susceptibility

STO/LSMO/PcNi-Cu-30C/Co/Au organic spin valve · Electrode

M-H loops of LSMO film, Co film, and LSMO/PcNi-Cu-nC MOF/Co heterostructures at 50 K.

Temperature: 50
Geometry: STO/LSMO/PcNi-Cu-nC/Co/Au heterostructures
Context: Composite device/heterostructure magnetic characterisation.
Measurement source: 213 · MR behavior of MOFs-based devices · Figure 4c; Figures S25-S27

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Co/Au control coercive field	~13 Oe	—	~	Text Approximate	213 · MR behavior of MOFs-based devices · Supporting Information Figure S25
LSMO control coercive field	~31 Oe	—	~	Text Approximate	213 · MR behavior of MOFs-based devices · Supporting Information Figure S25
Higher coercive field range in OSV M-H loops	340-423 Oe	—	range 340-423 Oe	Text Range	213 · MR behavior of MOFs-based devices · Figure 4c; Figure S26
Lower coercive field range in OSV M-H loops	36-55 Oe	—	range 36-55 Oe	Text Range	213 · MR behavior of MOFs-based devices · Figure 4c; Figure S26
Higher HC increase with MOF thickness	increased from 95 to 400 Oe	—	range 95-400 Oe	Text Range	213 · MR behavior of MOFs-based devices · Supporting Information Figure S27

Magnetic hysteresis M-H loops by SQUID-VSM

Magnetometry and magnetic susceptibility

STO/LSMO/PcM-Cu-nC/Co/Au OSV growth-cycle series (M = Ni, Cu, H2; n = 10-40) · Electrode

STO/LSMO/PcNi-Cu-nC/Co/Au heterostructures at 50 K for n = 10, 20, and 40 cycles.

Temperature: 50
Geometry: STO/LSMO/PcNi-Cu-nC/Co/Au heterostructures
Context: Composite device/heterostructure magnetic characterisation.
Measurement source: S25 · Section S4 · Figure S27

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
PcNi-Cu-10C OSV high coercive field	Hc (high) = 95 Oe	—	—	Figure Axis Rounded Reported	S25 · Section S4 · Figure S27
PcNi-Cu-10C OSV low coercive field	Hc (low) = 41 Oe	—	—	Figure Axis Rounded Reported	S25 · Section S4 · Figure S27
PcNi-Cu-20C OSV high coercive field	Hc (high) = 243 Oe	—	—	Figure Axis Rounded Reported	S25 · Section S4 · Figure S27
PcNi-Cu-20C OSV low coercive field	Hc (low) = 62 Oe	—	—	Figure Axis Rounded Reported	S25 · Section S4 · Figure S27
PcNi-Cu-40C OSV high coercive field	Hc (high) = 400 Oe	—	—	Figure Axis Rounded Reported	S25 · Section S4 · Figure S27
PcNi-Cu-40C OSV low coercive field	Hc (low) = 60 Oe	—	—	Figure Axis Rounded Reported	S25 · Section S4 · Figure S27