Synthesis evidence

Two-Dimensional Conductive Metal-Organic Framework Reinforced Spinterface in Organic Spin Valves

Song X., Jin C., Chen H. et al. · CCS Chemistry · 2023 · 208-217

9 structured synthesis routes

Completeness describes how fully the route could be reconstructed from the main article and supporting information.

Complete recipeSource: Both

Route 1: Other

S5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device

Metal precursorsLSMO target for bottom electrode; Co and Au evaporants for top electrode/protection layer.
Linker precursorsPcCu-Cu film prepared by LBL route.
SolventsChloroform cleaning for STO/STO-LSMO before film growth.
AtmosphereCo and Au deposited by thermal evaporation.
Substrate orientationSTO (001)
Work-upBottom LSMO electrode sputtering, PcCu-Cu LBL growth, Co/Au thermal evaporation.
Scalability contextJunction area 200 um x 200 um.
Show 3 structured reagent records
RoleReagentAmount / concentrationSource
OtherLSMO target/electrode45 nm thick, 200 um wideS5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device
OtherCotop electrodeS5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device
OtherAuprotection layerS5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device
Complete recipeSource: Both

Route 2: Other

S5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device

Metal precursorsLSMO target for bottom electrode; Co and Au evaporants for top electrode/protection layer.
Linker precursorsPcH2-Cu film prepared by LBL route.
SolventsChloroform cleaning for STO/STO-LSMO before film growth.
AtmosphereCo and Au deposited by thermal evaporation.
Substrate orientationSTO (001)
Work-upBottom LSMO electrode sputtering, PcH2-Cu LBL growth, Co/Au thermal evaporation.
Scalability contextJunction area 200 um x 200 um.
Show 3 structured reagent records
RoleReagentAmount / concentrationSource
OtherLSMO target/electrode45 nm thick, 200 um wideS5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device
OtherCotop electrodeS5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device
OtherAuprotection layerS5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device
Complete recipeSource: Both

Route 3: Other

S5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device

Metal precursorsLSMO target for bottom electrode; Co and Au evaporants for top electrode/protection layer.
Linker precursorsPcNi-Cu film prepared by LBL route.
SolventsChloroform cleaning for STO/STO-LSMO before film growth.
AtmosphereCo and Au deposited by thermal evaporation; high vacuum during Co deposition inferred from discussion.
Substrate orientationSTO (001)
Work-upBottom 45 nm, 200 um wide LSMO electrodes made by RF magnetron sputtering through shadow mask; PcNi-Cu grown on STO/LSMO; Co/Au thermally evaporated.
Scalability contextJunction area 200 um x 200 um.
Show 3 structured reagent records
RoleReagentAmount / concentrationSource
OtherLSMO target/electrode45 nm thick, 200 um wideS5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device
OtherCotop electrode; ~30 nm in cross-section sampleS5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device
OtherAuprotection layer; ~150 nm in cross-section sampleS5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device
Complete recipeSource: Both

Route 4: Other

S5 · Synthesis of PcM-Cu (M = Ni, Cu, H2) MOF film · Figure S1

Metal precursors0.1 mM Cu(OAc)2 in ethanol.
Linker precursors0.01 mM PcCu-(OH)8 suspension in ethanol.
SolventsEthanol; substrate cleaning with deionized water, ethanol, acetone, isopropyl alcohol or chloroform depending on substrate.
AdditivesPiranha solution for glass hydroxylation; H2O/H2O2/NH3.H2O (1:1:5 v/v/v) for STO and STO/LSMO hydroxylation.
AtmosphereFilms dried in N2 stream after substrate cleaning; no special growth atmosphere reported.
Temperatureroom temperature for dipping; glass hydroxylation 100; STO/STO-LSMO hydroxylation 85
Time0.5 h substrate hydroxylation for STO/STO-LSMO; 1 h for glass piranha treatment; per-cycle soaking 10 min in Cu(OAc)2 and 20 min in linker.
Substrate orientationSTO (001) for device substrates; hydroxyl-terminated glass/STO/STO-LSMO.
Oxidant / reductantCu(OAc)2 participates in coordination/redox with ligand hydroxyl groups.
Work-upPure ethanol rinse after each metal and linker soak.
Scalability contextAutomatic dip-coating produced smooth, continuous, large-area films and centimetre-sized substrates.
Show 3 structured reagent records
RoleReagentAmount / concentrationSource
Metal SourceCu(OAc)20.1 mM in ethanolS5 · Synthesis of PcM-Cu (M = Ni, Cu, H2) MOF film · Figure S1
LinkerPcCu-(OH)80.01 mM suspension in ethanolS5 · Synthesis of PcM-Cu (M = Ni, Cu, H2) MOF film · Figure S1
Solventethanolsoaking and rinse solventS5 · Synthesis of PcM-Cu (M = Ni, Cu, H2) MOF film · Figure S1
Complete recipeSource: SI

Route 5: Solvothermal

S4 · Synthesis of PcM-Cu (M = Ni, Cu) MOF powders

Metal precursorsCopper acetate, 3.0 mg, 15 umol; Cu present in PcCu-(OH)8 linker.
Linker precursorsPcCu-(OH)8, 5.3 mg, 7.5 umol.
SolventsDMF, water, acetone wash.
AdditivesAmmonium hydroxide solution (~25% v/v), 340 uL.
AtmosphereAutoclave sealed; no special gas atmosphere reported.
Temperature120
Time72
Oxidant / reductantCopper acetate acts as Cu source; redox between hydroxyl group and Cu ion inferred by XPS.
Work-upCool to room temperature; collect black solid by centrifugation; wash thoroughly with DMF, water, and acetone.
ActivationDried in vacuum for 12 h.
Scalability contextYield 73% based on PcCu-Cu MOF.
Show 5 structured reagent records
RoleReagentAmount / concentrationSource
LinkerPcCu-(OH)85.3 mg, 7.5 umolS4 · Synthesis of PcM-Cu (M = Ni, Cu) MOF powders
Metal Sourcecopper acetate3.0 mg, 15 umol · 0.5 mL DMF solutionS4 · Synthesis of PcM-Cu (M = Ni, Cu) MOF powders
SolventN,N-dimethylformamide (DMF)4 mL plus 0.5 mL metal-source solutionS4 · Synthesis of PcM-Cu (M = Ni, Cu) MOF powders
Baseammonium hydroxide solution340 uL · ~25% v/vS4 · Synthesis of PcM-Cu (M = Ni, Cu) MOF powders
Solventwater4.5 mLS4 · Synthesis of PcM-Cu (M = Ni, Cu) MOF powders
Complete recipeSource: Both

Route 6: Other

S5 · Synthesis of PcM-Cu (M = Ni, Cu, H2) MOF film · Figure S1

Metal precursors0.1 mM Cu(OAc)2 in ethanol.
Linker precursors0.01 mM PcH2-(OH)8 suspension in ethanol.
SolventsEthanol; substrate cleaning with deionized water, ethanol, acetone, isopropyl alcohol or chloroform depending on substrate.
AdditivesPiranha solution for glass hydroxylation; H2O/H2O2/NH3.H2O (1:1:5 v/v/v) for STO and STO/LSMO hydroxylation.
AtmosphereFilms dried in N2 stream after substrate cleaning; no special growth atmosphere reported.
Temperatureroom temperature for dipping; glass hydroxylation 100; STO/STO-LSMO hydroxylation 85
Time0.5 h substrate hydroxylation for STO/STO-LSMO; 1 h for glass piranha treatment; per-cycle soaking 10 min in Cu(OAc)2 and 20 min in linker.
Substrate orientationSTO (001) for device substrates; hydroxyl-terminated glass/STO/STO-LSMO.
Oxidant / reductantCu(OAc)2 participates in coordination/redox with ligand hydroxyl groups.
Work-upPure ethanol rinse after each metal and linker soak.
Scalability contextAutomatic dip-coating produced smooth, continuous, large-area films and centimetre-sized substrates.
Show 3 structured reagent records
RoleReagentAmount / concentrationSource
Metal SourceCu(OAc)20.1 mM in ethanolS5 · Synthesis of PcM-Cu (M = Ni, Cu, H2) MOF film · Figure S1
LinkerPcH2-(OH)80.01 mM suspension in ethanolS5 · Synthesis of PcM-Cu (M = Ni, Cu, H2) MOF film · Figure S1
Solventethanolsoaking and rinse solventS5 · Synthesis of PcM-Cu (M = Ni, Cu, H2) MOF film · Figure S1
Complete recipeSource: SI

Route 7: Solvothermal

S4-S5 · Synthesis of PcH2-Cu MOF powder

Metal precursorsCopper acetate, 4.8 mg, 24 umol.
Linker precursorsPcH2-(OH)8, 7.8 mg, 12 umol.
SolventsDMF, water, acetone wash.
AdditivesAmmonium hydroxide solution (~25% v/v), 530 uL.
AtmosphereAutoclave sealed; no special gas atmosphere reported.
Temperature120
Time120
Oxidant / reductantCopper acetate acts as Cu source; redox between hydroxyl group and Cu ion inferred by XPS.
Work-upCool to room temperature; collect black solid by centrifugation; wash thoroughly with DMF, water, and acetone.
ActivationDried in vacuum for 12 h.
Scalability contextYield 83% based on PcH2-Cu MOF.
Show 5 structured reagent records
RoleReagentAmount / concentrationSource
LinkerPcH2-(OH)87.8 mg, 12 umolS4-S5 · Synthesis of PcH2-Cu MOF powder
Metal Sourcecopper acetate4.8 mg, 24 umol · 0.8 mL DMF solutionS4-S5 · Synthesis of PcH2-Cu MOF powder
SolventN,N-dimethylformamide (DMF)6.7 mL plus 0.8 mL metal-source solutionS4-S5 · Synthesis of PcH2-Cu MOF powder
Baseammonium hydroxide solution530 uL · ~25% v/vS4-S5 · Synthesis of PcH2-Cu MOF powder
Solventwater2.5 mLS4-S5 · Synthesis of PcH2-Cu MOF powder
Complete recipeSource: Both

Route 8: Other

S5 · Synthesis of PcM-Cu (M = Ni, Cu, H2) MOF film · Figure S1

Metal precursors0.1 mM Cu(OAc)2 in ethanol.
Linker precursors0.01 mM PcNi-(OH)8 suspension in ethanol.
SolventsEthanol; substrate cleaning with deionized water, ethanol, acetone, isopropyl alcohol or chloroform depending on substrate.
AdditivesPiranha solution for glass hydroxylation; H2O/H2O2/NH3.H2O (1:1:5 v/v/v) for STO and STO/LSMO hydroxylation.
AtmosphereFilms dried in N2 stream after substrate cleaning; no special growth atmosphere reported.
Temperatureroom temperature for dipping; glass hydroxylation 100; STO/STO-LSMO hydroxylation 85
Time0.5 h substrate hydroxylation for STO/STO-LSMO; 1 h for glass piranha treatment; per-cycle soaking 10 min in Cu(OAc)2 and 20 min in linker.
Substrate orientationSTO (001) for device substrates; hydroxyl-terminated glass/STO/STO-LSMO.
Oxidant / reductantCu(OAc)2 participates in coordination/redox with ligand hydroxyl groups.
Work-upPure ethanol rinse after each metal and linker soak; final rinse with deionized water/ethanol and N2 drying after substrate cleaning.
Scalability contextAutomatic dip-coating produced smooth, continuous, large-area films and centimetre-sized substrates.
Show 5 structured reagent records
RoleReagentAmount / concentrationSource
Metal SourceCu(OAc)20.1 mM in ethanolS5 · Synthesis of PcM-Cu (M = Ni, Cu, H2) MOF film · Figure S1
LinkerPcNi-(OH)80.01 mM suspension in ethanolS5 · Synthesis of PcM-Cu (M = Ni, Cu, H2) MOF film · Figure S1
Solventethanolsoaking and rinse solventS5 · Synthesis of PcM-Cu (M = Ni, Cu, H2) MOF film · Figure S1
OxidantH2O2in H2O/H2O2/NH3.H2O = 1:1:5S5 · Synthesis of PcM-Cu (M = Ni, Cu, H2) MOF film · Figure S1
BaseNH3.H2Oin H2O/H2O2/NH3.H2O = 1:1:5S5 · Synthesis of PcM-Cu (M = Ni, Cu, H2) MOF film · Figure S1
Complete recipeSource: SI

Route 9: Solvothermal

S4 · Synthesis of PcM-Cu (M = Ni, Cu) MOF powders

Metal precursorsCopper acetate, 3.0 mg, 15 umol; Ni present in PcNi-(OH)8 linker.
Linker precursorsPcNi-(OH)8, 5.3 mg, 7.5 umol.
SolventsDMF, water, acetone wash.
AdditivesAmmonium hydroxide solution (~25% v/v), 340 uL.
AtmosphereAutoclave sealed; no special gas atmosphere reported.
Temperature120
Time72
Oxidant / reductantCopper acetate acts as Cu source; redox between hydroxyl group and Cu ion inferred by XPS.
Work-upCool to room temperature; collect black solid by centrifugation; wash thoroughly with DMF, water, and acetone.
ActivationDried in vacuum for 12 h.
Scalability contextYield ~88% based on PcNi-Cu MOF.
Show 5 structured reagent records
RoleReagentAmount / concentrationSource
LinkerPcNi-(OH)85.3 mg, 7.5 umolS4 · Synthesis of PcM-Cu (M = Ni, Cu) MOF powders
Metal Sourcecopper acetate3.0 mg, 15 umol · 0.5 mL DMF solutionS4 · Synthesis of PcM-Cu (M = Ni, Cu) MOF powders
SolventN,N-dimethylformamide (DMF)4 mL plus 0.5 mL metal-source solutionS4 · Synthesis of PcM-Cu (M = Ni, Cu) MOF powders
Baseammonium hydroxide solution340 uL · ~25% v/vS4 · Synthesis of PcM-Cu (M = Ni, Cu) MOF powders
Solventwater4.5 mLS4 · Synthesis of PcM-Cu (M = Ni, Cu) MOF powders