Complete recipeSource: Both
Route 1: Other
S5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device
Metal precursorsLSMO target for bottom electrode; Co and Au evaporants for top electrode/protection layer.
Linker precursorsPcCu-Cu film prepared by LBL route.
SolventsChloroform cleaning for STO/STO-LSMO before film growth.
AtmosphereCo and Au deposited by thermal evaporation.
Substrate orientationSTO (001)
Work-upBottom LSMO electrode sputtering, PcCu-Cu LBL growth, Co/Au thermal evaporation.
Scalability contextJunction area 200 um x 200 um.
Show 3 structured reagent records
| Role | Reagent | Amount / concentration | Source |
|---|---|---|---|
| Other | LSMO target/electrode | 45 nm thick, 200 um wide | S5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device |
| Other | Co | top electrode | S5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device |
| Other | Au | protection layer | S5 · Fabrication of the LSMO/PcM-Cu (M = Ni, Cu, H2)/Co/Au Device |