In situ spectroscopic ellipsometry during ALD/MLD growth
As-deposited Cu-DMD thin film on Si(100) with native oxide · Thin Film
Thickness fitted using a general oscillator model in CompleteEase; J.A. Woollam M-2000, 245-1500 nm
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Cu(dmap)2 pulse saturation threshold | Saturative behaviour with Cu(dmap)2 pulse lengths above 20 s | — | threshold stated as above 20 s | Text Approximate | p003 / article p.10251 · Results and Discussion · Figure S1 |
| DMD pulse saturation threshold | Saturative behaviour with DMD pulse lengths above 35 s | — | threshold stated as above 35 s | Text Approximate | p003 / article p.10251 · Results and Discussion · Figure S1 |
| Approximate growth per cycle plateau | Approximately 0.46-0.48 A/cycle from Figure S1 axes for both precursors | — | visual estimate +/-0.02 A/cycle | Figure Axis Approximate | p002 / SI p.1 · Supporting Information · Figure S1 |
| Linear thickness increase with ALD/MLD cycles | Well-controlled linear thickness increase after initial enhanced-growth regime | — | — | Text Qualitative | p003 / article p.10251 · Results and Discussion · Figure 1b |