Complete recipeSource: Both
Route 1: Cvd
p002 / article p.10250 · Experimental Section · Figure S1
Metal precursorsBis(dimethylamino-2-propoxy)copper(II) (Cu(dmap)2, >97%, Strem Chemicals)
Linker precursorsN,N'-dimethyldithiooxamide (DMD), synthesised from dithiooxamide and methylamine
SolventsNo solvent in ALD/MLD film deposition; water used only in DMD precursor synthesis/washing
AtmosphereHigh-vacuum pump-type ALD reactor; argon carrier gas
TemperatureSubstrate 80; chamber walls 85; Cu(dmap)2 bubbler 70; DMD bubbler 60
TimeCycle-dependent; pulse saturation observed above 20 s for Cu(dmap)2 and 35 s for DMD
Substrate orientationSi(100) with native oxide unless otherwise mentioned; also IDA, quartz, TiN-coated Si and Pt-coated Si for specific measurements
Oxidant / reductantNone during deposition
Work-upAfter each precursor pulse, chamber pumped back to base pressure before next pulse
ActivationNone reported for as-deposited films
Scalability contextALD/MLD described as a vapour-phase layer-by-layer method with subnanometre thickness control and uniformity over large-area substrates.
Show 5 structured reagent records
| Role | Reagent | Amount / concentration | Source |
|---|---|---|---|
| Metal Source | Bis(dimethylamino-2-propoxy)-copper(II) (Cu(dmap)2, >97%, Strem Chemicals) | Not specified | p002 / article p.10250 · Experimental Section · Figure S1 |
| Linker | N,N'-dimethyldithiooxamide (DMD) | Not specified | p002 / article p.10250 · Experimental Section · Figure S1 |
| Other | Argon carrier gas | Not specified | p002 / article p.10250 · Experimental Section · Figure S1 |
| Linker | dithiooxamide (97%, Sigma Aldrich), used to synthesise DMD | 5 g | p002 / article p.10250 · Experimental Section · Figure S1 |
| Base | aqueous methylamine (40 wt % in H2O, Sigma Aldrich), used to synthesise DMD | 3 x molar excess · 40 wt % in H2O | p002 / article p.10250 · Experimental Section · Figure S1 |