Complete recipeSource: Both
Route 1: Other
5 · Fabrication of In-TCPP SURMOF and mix-oriented thin film
Metal precursorsindium nitrate / In(NO3)3
Linker precursorsTCPP, 5,10,15,20-tetra(4-carboxyphenyl)porphyrin
Solventsethanol for diluted precursor solutions and rinsing
AdditivesNaOH and 30% H2O2 used for substrate OH-functionalisation
Atmospheredried under nitrogen flux after substrate functionalisation; growth atmosphere not reported
Temperature80 for substrate functionalisation; room temperature not explicitly reported for LPE dipping
Time0.333 h In(NO3)3 immersion and 0.5 h TCPP immersion per cycle; 0.5 h substrate functionalisation
Substrate orientationOH-functionalised SiO2/Si; [021] orientation perpendicular to the substrate in the resulting SURMOF
Oxidant / reductant30% hydrogen peroxide in substrate pretreatment
Work-upEach precursor immersion step followed by rinsing with pure ethanol to remove residual reactants.
Activationnot reported
Scalability contextLayer-by-layer cycles tune thickness from approximately 60 to 240 nm for 5-20 cycles.
Show 5 structured reagent records
| Role | Reagent | Amount / concentration | Source |
|---|---|---|---|
| Metal Source | indium nitrate | 1 mM | 5 · Fabrication of In-TCPP SURMOF and mix-oriented thin film |
| Linker | TCPP | 0.1 mM | 5 · Fabrication of In-TCPP SURMOF and mix-oriented thin film |
| Solvent | ethanol | Not specified | 5 · Fabrication of In-TCPP SURMOF and mix-oriented thin film |
| Base | NaOH solution | mixture with 30% hydrogen peroxide, ratio 3:1 · 2 mM | 5 · Fabrication of In-TCPP SURMOF and mix-oriented thin film |
| Oxidant | hydrogen peroxide | mixture with 2 mM NaOH, ratio 3:1 · 30% | 5 · Fabrication of In-TCPP SURMOF and mix-oriented thin film |