cMOF Evidence Base
Electrical Transport — Does the Mode of Metal-Organic Framework/Electrode Adhesion Determine Rates for Redox-Hopping-Based Charge Transport within Thin-Film Metal-Organic Frameworks?

Measurement evidence

Electrical Transport

Does the Mode of Metal-Organic Framework/Electrode Adhesion Determine Rates for Redox-Hopping-Based Charge Transport within Thin-Film Metal-Organic Frameworks? · Duan J., Goswami S., Patwardhan S. et al. · Journal of Physical Chemistry C · 2022 · 4601-4611

8 measurement groups · 37 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

chronoamperometry / Cottrell analysis

Chronoamperometry

EPD-MOF-525 · Thin Film

0.1 M TBAPF6 in DCM; potential steps 0 to 1.5 V and 1.5 to 0 V; current recorded every 10 ms for 5 min

Context
pristine MOF thin film
Measurement source
6 · Chronoamperometry-Based Assessment · Figure 6; Table 2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Dhopping, 0 to 1.5 V oxidationMarked as a best value within this paper2 +/- 0.2 x 10^-14 cm2/s—+/- 0.2 x 10^-14 cm2/sTable
Exact Reported		6 · Chronoamperometry-Based Assessment · Table 2
Dhopping, 1.5 to 0 V reductionMarked as a best value within this paper5 +/- 0.3 x 10^-14 cm2/s—+/- 0.3 x 10^-14 cm2/sTable
Exact Reported		6 · Chronoamperometry-Based Assessment · Table 2
khopping 0 V to 1.5 V1.2 s^-1——SI Table
Exact Reported		5 · Supporting Information · Table S2
khopping 1.5 V to 0 V2.9 s^-1——SI Table
Exact Reported		5 · Supporting Information · Table S2
Cottrell slope 0 V to 1.5 V1.6x10^-5 C/s^0.5 (R2=0.996)——SI Table
Exact Reported		4 · Supporting Information · Table S1
Cottrell slope 1.5 V to 0 V2.5x10^-5 C/s^0.5 (R2=0.992)——SI Table
Exact Reported		4 · Supporting Information · Table S1

chronoamperometry / Cottrell analysis

Chronoamperometry

EPD-MOF-525 · Thin Film

0.5 M TBAPF6 in DCM; potential steps 0 to 1.5 V and 1.5 to 0 V; EPD active area 0.6 cm2 reported for this condition

Context
pristine MOF thin film
Measurement source
4 · Supporting Information · Table S1; Table S2; Table S3
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Dhopping, 0 to 1.5 V oxidation5.3 x 10^-13 cm2/s——SI Table
Exact Reported		5 · Supporting Information · Table S3
Dhopping, 1.5 to 0 V reduction4.5 x 10^-13 cm2/s——SI Table
Exact Reported		5 · Supporting Information · Table S3
EPD electrode area for 0.5 M calculationA = 0.6 cm2——Text
Exact Reported		4 · Equation S1
khopping 0 V to 1.5 V30.9 s^-1——SI Table
Exact Reported		5 · Supporting Information · Table S2
khopping 1.5 V to 0 V27.2 s^-1——SI Table
Exact Reported		5 · Supporting Information · Table S2
Cottrell slope 0 V to 1.5 V3.8x10^-5 C/s^0.5 (R2=0.996)——SI Table
Exact Reported		4 · Supporting Information · Table S1
Cottrell slope 1.5 V to 0 V7.7x10^-5 C/s^0.5 (R2=0.992)——SI Table
Exact Reported		4 · Supporting Information · Table S1

chronoamperometry / Cottrell analysis

Chronoamperometry

ST-MOF-525 · Thin Film

0.1 M TBAPF6 in DCM; potential steps 0 to 1.5 V and 1.5 to 0 V; current recorded every 10 ms for 5 min

Context
pristine MOF thin film
Measurement source
6 · Chronoamperometry-Based Assessment · Figure 6; Table 2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
average Dhopping stated across 0.1 M film measurementsabout 5 x 10^-14 cm2/s——Text
Approximate		5 · Chronoamperometry-Based Assessment
Dhopping, 0 to 1.5 V oxidationMarked as a best value within this paper5 +/- 0.3 x 10^-14 cm2/s—+/- 0.3 x 10^-14 cm2/sTable
Exact Reported		6 · Chronoamperometry-Based Assessment · Table 2
Dhopping, 1.5 to 0 V reductionMarked as a best value within this paper10 +/- 0.6 x 10^-14 cm2/s—+/- 0.6 x 10^-14 cm2/sTable
Exact Reported		6 · Chronoamperometry-Based Assessment · Table 2
electrode area used for Cottrell calculationsA = 1.3 cm2——Text
Exact Reported		4 · Equation S1
redox analyte concentration used in Cottrell equation0.201 mol/cm3——Text
Exact Reported		4 · Equation S1
average hopping distancer = 1.3x10^-7 cm——Text
Exact Reported		4 · Equation S2
khopping 0 V to 1.5 V3.1 s^-1——SI Table
Exact Reported		5 · Supporting Information · Table S2
khopping 1.5 V to 0 V0.65 s^-1——SI Table
Exact Reported		5 · Supporting Information · Table S2
Cottrell slope 0 V to 1.5 V2.6x10^-5 C/s^0.5 (R2=0.995)——SI Table
Exact Reported		4 · Supporting Information · Table S1
Cottrell slope 1.5 V to 0 V3.7x10^-5 C/s^0.5 (R2=0.997)——SI Table
Exact Reported		4 · Supporting Information · Table S1

chronoamperometry / Cottrell analysis

Chronoamperometry

ST-MOF-525 · Thin Film

0.5 M TBAPF6 in DCM; potential steps 0 to 1.5 V and 1.5 to 0 V

Context
pristine MOF thin film
Measurement source
3 · Supporting Information · Figure S3; Table S1; Table S2; Table S3
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Dhopping, 0 to 1.5 V oxidation6.5 x 10^-12 cm2/s——SI Table
Exact Reported		5 · Supporting Information · Table S3
Dhopping, 1.5 to 0 V reduction4.8 x 10^-12 cm2/s——SI Table
Exact Reported		5 · Supporting Information · Table S3
khopping 0 V to 1.5 V384.5 s^-1——SI Table
Exact Reported		5 · Supporting Information · Table S2
khopping 1.5 V to 0 V288.4 s^-1——SI Table
Exact Reported		5 · Supporting Information · Table S2
Cottrell slope 0 V to 1.5 V2.9x10^-4 C/s^0.5 (R2=0.998)——SI Table
Exact Reported		4 · Supporting Information · Table S1
Cottrell slope 1.5 V to 0 V2.5x10^-4 C/s^0.5 (R2=0.998)——SI Table
Exact Reported		4 · Supporting Information · Table S1

electrochemical impedance spectroscopy

Impedance spectroscopy

EPD-MOF-525 · Thin Film

0.1 M TBAPF6 in DCM; 1.5 V vs Ag/AgCl; 10 mV amplitude; 1 MHz to 50 mHz

Context
pristine MOF thin film
Measurement source
5 · Instrumentation; EIS assessment · Figure 5; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
redox conductivityMarked as a best value within this paper1 x 10^-8 S/cm——Table
Rounded Reported		4 · EIS assessment · Table 1
D(EIS) converted from conductivity5 x 10^-14 cm2/s——SI Table
Rounded Reported		6 · Supporting Information · Table S5

electrochemical impedance spectroscopy

Impedance spectroscopy

EPD-MOF-525 · Thin Film

0.5 M TBAPF6 in DCM; conductivity from Nyquist plot

Context
pristine MOF thin film
Measurement source
5 · Supporting Information · Figure S4; Table S4; Table S5
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
redox conductivity1 x 10^-8 S/cm——SI Table
Rounded Reported		5 · Supporting Information · Table S4
D(EIS) converted from conductivity5 x 10^-14 cm2/s——SI Table
Rounded Reported		6 · Supporting Information · Table S5

electrochemical impedance spectroscopy

Impedance spectroscopy

ST-MOF-525 · Thin Film

0.1 M TBAPF6 in DCM; 1.5 V vs Ag/AgCl; 10 mV amplitude; 1 MHz to 50 mHz

Context
pristine MOF thin film
Measurement source
5 · Instrumentation; EIS assessment · Figure 5; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
redox conductivityMarked as a best value within this paper1 x 10^-8 S/cm——Table
Rounded Reported		4 · EIS assessment · Table 1
D(EIS) converted from conductivity5 x 10^-14 cm2/s——SI Table
Rounded Reported		6 · Supporting Information · Table S5

electrochemical impedance spectroscopy

Impedance spectroscopy

ST-MOF-525 · Thin Film

0.5 M TBAPF6 in DCM; conductivity from Nyquist plot

Context
pristine MOF thin film
Measurement source
5 · Supporting Information · Figure S4; Table S4; Table S5
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
redox conductivity2 x 10^-8 S/cm——SI Table
Rounded Reported		5 · Supporting Information · Table S4
D(EIS) converted from conductivity1 x 10^-13 cm2/s——SI Table
Rounded Reported		6 · Supporting Information · Table S5