| Wearable Cu3(HHTP)2 MOFECT ECG arrayresearch_0648__mat__m_cu3_hhtp2 | Electrode · Target Sample · Doped | Operated on skin using commercial ECG gel and a shared commercial Ag/AgCl ECG electrode gate.Ring-shaped ultrathin polyimide substrate adhered to skin · 12 devices distributed on a circle with radius 5.0 cm. | main p.8 · Implementation of MOFECTs in wearable electrophysiological mapping · Fig. 5 |
| Flexible inverter containing Cu3(HHTP)2 MOFECTresearch_0648__mat__m_cu3_hhtp2 | Electrode · Composite Sample · Composite | Flexible inverter devices using either two Cu3(HHTP)2 MOFECTs or a Cu3(HHTP)2 n-type MOFECT with a p(g2T-TT) OECT; ion gel electrolyte for flexible circuits.Ultrathin polyimide substrate · All-MOF inverter: d = 50 nm, W = 60 um, L = 30 um for each MOFECT in fig. S19. | main p.7 · Implementations of MOFECTs in flexible inverters · Fig. 4; figs. S19-S21 |
| Large-area Cu3(HHTP)2 MOFECT arrayresearch_0648__mat__m_cu3_hhtp2 | Electrode · Target Sample · Doped | Array of MOFECTs operated in electrolyte and mapped for electron mobility uniformity.Large-area substrate, 30 mm x 50 mm · 16 individual devices; typical channel thickness d = 50 nm | main p.4 · Figures of merit of MOFECTs · Fig. 2G-I |
| Cu3(HHTP)2 MOFECT with Ag/AgCl gateresearch_0648__mat__m_cu3_hhtp2 | Electrode · Target Sample · Doped | Operated in 0.05 M CaCl2 aqueous electrolyte with non-polarizable Ag/AgCl (sat. KCl) gate.Patterned substrate with Cu3(HHTP)2 channel and external Ag/AgCl reference gate · 50-200 nm channel-thickness series for transconductance and capacitance; 50 nm baseline devices. | main p.3 · Figures of merit of MOFECTs · Fig. 2D,E |
| Cu3(HHTP)2 MOFECT with in-plane Au gateresearch_0648__mat__m_cu3_hhtp2 | Electrode · Target Sample · Doped | Operated in 0.05 M CaCl2 aqueous electrolyte; positive gate bias induces n-type cation doping and negative gate bias induces p-type anion doping.Patterned glass substrate with Cr/Au source-drain-gate electrodes and Al2O3 insulation · Channel thickness d = 50 nm; W = 60 um; L = 30 um for output/transfer examples. | main p.3 · Microfabrication of MOFECTs · Fig. 2 |
| Pristine Cu3(HHTP)2 thin filmresearch_0648__mat__m_cu3_hhtp2 | Thin Film · Pristine Control · Pristine Framework | Layer-by-layer solution-grown, [001]-oriented Cu3(HHTP)2 film before intentional electrochemical ion doping.Glass, Au electrode, ITO, or device substrates depending on measurement · 50-200 nm films; 150 nm film used for SI GIXRD; 50 nm film used for several AFM/SEM and device examples. | main p.2 · Microfabrication of MOFECTs · Fig. 1 |
| Electrochemically doped Cu3(HHTP)2 films for ex situ XPSresearch_0648__mat__m_cu3_hhtp2 | Thin Film · Target Sample · Doped | Film immersed in 0.05 M CaCl2; biased at 0.05 V for n-type doping or -0.5 V for p-type doping versus Ag/AgCl for 60 s.Indium tin oxide substrate | main p.8 · Characterizations of Cu3(HHTP)2 · fig. S12 |
| Cu3(HHTP)2 crystallographic model for Zeo++ pore analysisresearch_0648__mat__m_cu3_hhtp2 | Model · Model System · Model | Zeo++ calculation using literature lattice parameters and atomic coordinates; nitrogen probe radius 1.86 A.not_applicable · not_applicable | main p.8 · Characterizations of Cu3(HHTP)2 · table S2 |