Electrical Transport — 2D metal-organic frameworks for ultraflexible electrochemical transistors with high transconductance and fast response speeds

5 measurement groups · 32 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Voltage transfer, static gain and transient response of flexible electrochemical inverters

Flexible inverter containing Cu3(HHTP)2 MOFECT · Electrode

Keithley 4200A-SCS for transfer curves; Agilent 33220A input pulse, Keithley 2400 VDD, Tektronix TBS2072 output recording; ambient room temperature.

Temperature: room temperature
Atmosphere: ambient air
Geometry: Ultrathin PI flexible inverter arrays; all-MOF inverter in fig. S19 and p(g2T-TT)/MOFECT complementary inverter in Fig. 4
Context: composite device containing Cu3(HHTP)2 MOFECT
Measurement source: main p.6-7 · Implementations of MOFECTs in flexible inverters · Fig. 4; figs. S19-S22

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
All-MOF ambipolar inverter static gain at VDD = 0.3 V	G = 4	—	—	Text Exact Reported	main p.7 · Implementations of MOFECTs in flexible inverters · fig. S19
Complementary inverter peak static gain at VDD = 0.4 VMarked as a best value within this paper	15 V V-1	—	—	Text Exact Reported	main p.7 · Implementations of MOFECTs in flexible inverters · Fig. 4F
Complementary inverter peak static gain at VDD = 0.2 V	5 V V-1	—	—	Text Exact Reported	main p.7 · Implementations of MOFECTs in flexible inverters · Fig. 4F
Complementary inverter transient response	0.79 ms	0.00079 s	—	Text Exact Reported	main p.7 · Implementations of MOFECTs in flexible inverters · Fig. 4G
Complementary inverter bandwidth	1.27 kHz	1270 Hz	—	Text Exact Reported	main p.7 · Implementations of MOFECTs in flexible inverters · fig. S22
n-type MOFECT response in ion-gel complementary inverter	0.26 ms	0.00026 s	—	Text Exact Reported	main p.7 · Implementations of MOFECTs in flexible inverters · fig. S21B
p(g2T-TT) p-type OECT response in complementary inverter	0.34 ms	0.00034 s	—	Text Exact Reported	main p.7 · Implementations of MOFECTs in flexible inverters · fig. S21A

Transfer-curve extraction of electron mobility across array

Large-area Cu3(HHTP)2 MOFECT array · Electrode

16 MOFECT devices on a 30 mm x 50 mm substrate; transfer curves in fig. S13.

Temperature: room temperature
Atmosphere: ambient air
Geometry: 16 devices; W = 60 um, L = 30 um, d = 50 nm
Context: doped MOFECT array
Measurement source: main p.4 · Figures of merit of MOFECTs · Fig. 2G-I; fig. S13

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Number of devices in large-area array	16 individual devices	—	—	Text Exact Reported	main p.4 · Figures of merit of MOFECTs · Fig. 2G
Large-area substrate size	30 mm x 50 mm	—	—	Text Exact Reported	main p.4 · Figures of merit of MOFECTs · Fig. 2G
Average electron mobility in large-area arrayMarked as a best value within this paper	0.30 +/- 0.02 cm2 V-1 s-1	—	+/- 0.02 cm2 V-1 s-1	Text Exact Reported	main p.4 · Figures of merit of MOFECTs · Fig. 2I
Maximum electron mobility in large-area array	0.32 cm2 V-1 s-1	—	—	Text Exact Reported	main p.4 · Figures of merit of MOFECTs · Fig. 2I
Minimum electron mobility in large-area array	0.24 cm2 V-1 s-1	—	—	Text Exact Reported	main p.4 · Figures of merit of MOFECTs · Fig. 2I

Transfer characteristics and transconductance analysis with Ag/AgCl gate

Cu3(HHTP)2 MOFECT with Ag/AgCl gate · Electrode

Ag/AgCl (sat. KCl) non-polarizable gate; VDS = 0.1 V for reported transfer curve; 0.05 M CaCl2 electrolyte.

Temperature: room temperature
Atmosphere: ambient air
Geometry: 50-200 nm channel thickness series; W, L and d used for geometry-normalised transconductance
Context: doped MOFECT
Measurement source: main p.3-4 · Figures of merit of MOFECTs · Fig. 2D-F; fig. S9; table S1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Peak transconductance, n-type operation	20.2 uS	—	—	Text Exact Reported	main p.3 · Figures of merit of MOFECTs · Fig. 2E
Geometry-normalised transconductance	gm,nom = 2.0 S cm-1 at VDS = 0.1 V	—	—	Text Exact Reported	main p.4 · Figures of merit of MOFECTs · Fig. 2F
Peak transconductance, p-type operation	13.3 uS	—	—	Text Exact Reported	main p.3 · Figures of merit of MOFECTs · Fig. 2E
Electron mobility-volumetric capacitance productMarked as a best value within this paper	mu_e C* = 20.3 F cm-1 V-1 s-1	—	—	Text Exact Reported	main p.4 · Figures of merit of MOFECTs · Fig. 2F
Hole mobility-volumetric capacitance product	mu_h C* = 13.4 F cm-1 V-1 s-1	—	—	Text Exact Reported	main p.4 · Figures of merit of MOFECTs · Fig. 2F
Table S1 areal capacitance for 200 nm Cu3(HHTP)2 transistor	1.4 x 10-3 F cm-2	—	—	SI Table Exact Reported	SI p.26 · Table S1 · Table S1
Table S1 electron mobility for 200 nm Cu3(HHTP)2 transistor	0.30 cm2 V-1 s-1	—	—	SI Table Exact Reported	SI p.26 · Table S1 · Table S1
Table S1 mobility-capacitance product for 200 nm Cu3(HHTP)2 transistorMarked as a best value within this paper	4 x 10-4 F V-1 s-1	—	—	SI Table Exact Reported	SI p.26 · Table S1 · Table S1

Output and transfer characteristics using Keithley source meters

Cu3(HHTP)2 MOFECT with in-plane Au gate · Electrode

0.05 M CaCl2 aqueous electrolyte; in-plane Au gate; ambient air at room temperature.

Temperature: room temperature
Atmosphere: ambient air
Geometry: d = 50 nm, W = 60 um, L = 30 um
Context: doped MOFECT
Measurement source: main p.3 · Microfabrication of MOFECTs · Fig. 2A-C

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ambipolar current modulation	Positive gate bias gives n-type doping; negative gate bias gives p-type doping.	—	—	Text Qualitative	main p.3 · Microfabrication of MOFECTs · Fig. 2A-C

Pulsed-gate transient response and operational stability

Cu3(HHTP)2 MOFECT with Ag/AgCl gate · Electrode

Gate voltage pulses supplied by Agilent 33220A; channel-current response recorded by Tektronix TBS2072 via SR570 preamplifier; 0.05 M CaCl2 electrolyte.

Temperature: room temperature
Atmosphere: ambient air
Geometry: n-type: W = 60 um, L = 30 um and W = 50 um, L = 2 um, d = 50 nm; p-type short-channel W = 50 um, L = 2 um, d = 50 nm
Context: doped MOFECT
Measurement source: main p.4-6 · Figures of merit of MOFECTs · Fig. 3; figs. S14-S17

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Average n-channel carrier mobility used for transit-time estimate	0.17 cm2 V-1 s-1	—	—	Text Exact Reported	main p.4 · Figures of merit of MOFECTs
Estimated electron transit time for 2 um channel	2.4 us	0.0000024 s	—	Text Exact Reported	main p.4 · Figures of merit of MOFECTs
Estimated electron transit time for 30 um channel	0.53 ms	0.00053 s	—	Text Exact Reported	main p.4 · Figures of merit of MOFECTs
Estimated ion conductivity in nanopores	0.032 S m-1	—	—	Text Exact Reported	main p.6 · Figures of merit of MOFECTs · Fig. 3C-D
Reported LUMO level linked to n-type stability	-4.74 eV	—	—	Text Exact Reported	main p.6 · Figures of merit of MOFECTs
N-type MOFECT current degradation after pulsed stability test	less than 9% after more than 10^3 pulses in 8000 s	—	less than	Text Approximate	main p.6 · Figures of merit of MOFECTs · Fig. 3E-F
Estimated hole transit time for p-type 2 um channel	~4.7 us	0.0000047 s	—	Text Approximate	main p.6 · Figures of merit of MOFECTs · fig. S16
P-type MOFECT current degradation after pulsed stability test	less than 11%	—	less than	Text Approximate	main p.6 · Figures of merit of MOFECTs · fig. S17
N-type MOFECT response time, 2 um channelMarked as a best value within this paper	10 us	0.00001 s	—	Text Exact Reported	main p.4 · Figures of merit of MOFECTs · Fig. 3B
N-type MOFECT response time, 30 um channel	0.88 ms	0.00088 s	—	Text Exact Reported	main p.4 · Figures of merit of MOFECTs · Fig. 3A
P-type MOFECT response time, 2 um channel	49 us	0.000049 s	—	Text Exact Reported	main p.6 · Figures of merit of MOFECTs · fig. S16