Measurement evidence
2D metal-organic frameworks for ultraflexible electrochemical transistors with high transconductance and fast response speeds · Song J., Liu H., Zhao Z. et al. · Science Advances · 2023 · eadd9627
Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.
Pristine Cu3(HHTP)2 thin film · Thin Film
Water droplet contact angle; optical bandgap from Cu3(HHTP)2 film on glass.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Water contact angle | 66.92 deg | — | — | Text Exact Reported | main p.2 · Microfabrication of MOFECTs · fig. S6 |
| Optical bandgap | about 0.22 eV | — | — | Text Approximate | main p.2 · Microfabrication of MOFECTs · fig. S7 |
Electrochemically doped Cu3(HHTP)2 films for ex situ XPS · Thin Film
Pristine, n-type doped and p-type doped Cu3(HHTP)2 films; 0.05 M CaCl2; 0.05 V or -0.5 V versus Ag/AgCl for 60 s.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Cu+ 2p binding energy | ~932.8 eV | — | — | Text Approximate | main p.4 · Figures of merit of MOFECTs · fig. S12B |
| Cu2+ 2p binding energy | ~934.6 eV | — | — | Text Approximate | main p.4 · Figures of merit of MOFECTs · fig. S12B |
| No pronounced redox during operational ion doping | No pronounced redox process occurs in the 2D MOF after ion doping within the operational voltage region. | — | — | Text Qualitative | main p.4 · Figures of merit of MOFECTs · fig. S12 |
| O 1s XPS higher binding-energy component | ~532.5 eV | — | — | Text Approximate | main p.4 · Figures of merit of MOFECTs · fig. S12C |
| O 1s XPS lower binding-energy component | ~531.2 eV | — | — | Text Approximate | main p.4 · Figures of merit of MOFECTs · fig. S12C |