cMOF Evidence Base

Synthesis evidence

2D metal-organic frameworks for ultraflexible electrochemical transistors with high transconductance and fast response speeds

Song J., Liu H., Zhao Z. et al. · Science Advances · 2023 · eadd9627

2 structured synthesis routes

Completeness describes how fully the route could be reconstructed from the main article and supporting information.

Partial recipeSource: Both

Route 1: Other

main p.9 · Fabrication of inverters · fig. S20

Metal precursorsCu3(HHTP)2 MOFECT fabricated using the aforementioned layer-by-layer Cu(OAc)2/HHTP process
Linker precursorsHHTP for MOF channel; p(g2T-TT) polymer for non-MOF p-type OECT component
SolventsAcetone washing for photoresist/polymer patterning; poly(vinyl alcohol) mixed with CaCl2 solution to form ion gel
AdditivesAZ 5214E, Al2O3, SU-8, p(g2T-TT), poly(vinyl alcohol)/CaCl2 ion gel
AtmosphereHigh-purity N2 glove box for p(g2T-TT) anneal
Temperature100
Time0.5 h p(g2T-TT) anneal; MOF anneal as in MOFECT route
Substrate orientationUltrathin PI substrate with patterned metal electrodes, Al2O3 layer and SU-8 layer
Work-upUnwanted p(g2T-TT) removed by acetone washing; substrate encapsulated before growth of the 2D MOF
Activationp(g2T-TT) annealed at 100 deg C for 30 min in high-purity N2; MOFECT fabricated using aforementioned process
Scalability contextFlexible inverter arrays were fabricated on ultrathin PI substrates.
Show 4 structured reagent records
RoleReagentAmount / concentrationSource
Otherp(g2T-TT)Not specifiedmain p.9 · Fabrication of inverters · fig. S20
Additivepoly(vinyl alcohol) / CaCl2 ion gelNot specifiedmain p.9 · Fabrication of inverters · fig. S20
SolventacetoneNot specifiedmain p.9 · Fabrication of inverters · fig. S20
AdditiveAZ 5214ENot specifiedmain p.9 · Fabrication of inverters · fig. S20
Complete recipeSource: Both

Route 2: Other

main p.9 · Microfabrication of MOFECTs · Fig. 1E

Metal precursors1 mM Cu(OAc)2 ethanolic solution
Linker precursors0.1 mM HHTP ethanolic solution
SolventsEthanol; acetone for lift-off/photoresist removal
AdditivesAZ 5214E photoresist, AZ 300 MIF developer, SU-8 2002 sacrificial layer, Al2O3 insulation layer
AtmosphereHigh-purity N2 glove box for final annealing; other fabrication/electrochemical measurements in ambient air unless stated
Temperature85
Time0.333 h in Cu(OAc)2 and 0.667 h in HHTP per layer-by-layer cycle; 0.5 h final anneal
Substrate orientationPreferential [001]-oriented growth on patterned substrate; slipped-parallel AB stacking assigned
Oxidant / reductantO2 plasma pretreatment; no separate oxidant or reductant reported for MOF growth
Work-upEach immersion followed by washing with pure ethanol; SU-8 layer peeled off after target thickness; lift-off in acetone for metal/oxide patterning
ActivationAnnealed at 85 deg C for 30 min in a high-purity N2 glove box
Scalability contextLarge-area MOFECT arrays with 16 devices on a 30 mm x 50 mm substrate were fabricated using the same liquid-phase deposition and photolithography process.
Show 7 structured reagent records
RoleReagentAmount / concentrationSource
Metal SourceCu(OAc)2 ethanolic solution1 mMmain p.9 · Microfabrication of MOFECTs · Fig. 1E
LinkerHHTP ethanolic solution0.1 mMmain p.9 · Microfabrication of MOFECTs · Fig. 1E
Solventethanolpure ethanol washmain p.9 · Microfabrication of MOFECTs · Fig. 1E
AdditiveAZ 5214E photoresist / AZ 300 MIF developerNot specifiedmain p.9 · Microfabrication of MOFECTs · Fig. 1E
AdditiveSU-8 2002 sacrificial layerNot specifiedmain p.9 · Microfabrication of MOFECTs · Fig. 1E
OtherCr/Au electrodes10 nm Cr and 100 nm Aumain p.9 · Microfabrication of MOFECTs · Fig. 1E
OtherAl2O3 insulation layer10 nmmain p.9 · Microfabrication of MOFECTs · Fig. 1E