Computational Modelling — A Dual-Ligand Porous Coordination Polymer Chemiresistor with Modulated Conductivity and Porosity

Measurement evidence

Computational Modelling

A Dual-Ligand Porous Coordination Polymer Chemiresistor with Modulated Conductivity and Porosity · Yao M.-S., Zheng J.-J., Wu A.-Q. et al. · Angewandte Chemie - International Edition · 2020 · 172-176

1 measurement group · 1 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Spin-polarised periodic DFT using VASP 5.4.4, PBE-D3, PAW, Hubbard Ueff = 4.0 eV for Cu d electrons

Cu3(HHTP)(THQ) periodic DFT model · Model

Plane-wave cut-off 500 eV; force convergence 0.01 eV/Angstrom; 1x1x3 Monkhorst-Pack mesh; ferromagnetic spin within a layer and antiferromagnetic between neighbouring layers.

Geometry
Periodic crystal model
Context
model system
Measurement source
3-4 · Computational simulation · Figure S6
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Relative stability of AB slipped-parallel stacking versus AA stackingAB slipped-parallel stacking is ~0.37 eV lower than AA-stackingCaption
Approximate
9 · Figure S6 caption · Figure S6